4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS
D
Gallium-Arsenide-Diode Infrared Source
Optically Coupled to a Silicon npn
Phototransistor
D
High Direct-Current Transfer Ratio
D
High-Voltage Electrical Isolation
1.5-kV, 2.5-kV, or 3.55-kV Rating
D
High-Speed Switching
tr = 7 µs, tf = 7 µs Typical
D
Typical Applications Include Remote
Terminal Isolation, SCR and Triac Triggers,
Mechanical Relays and Pulse Transformers
D
Safety Regulatory Approval
UL/CUL, File No. E65085
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†
Input-to-output peak voltage (8-ms half sine wave): 4N35 3.55 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N36 2.5 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4N37 1.5 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-to-output root-mean-square voltage (8-ms half sine wave): 4N35 2.5 kV. . . . . . . . . . . . . . . . . . . . . . . . .
4N36 1.75 kV. . . . . . . . . . . . . . . . . . . . . . . .
4N37 1.05 kV. . . . . . . . . . . . . . . . . . . . . . . .
Collector-base voltage 70 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 1) 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-base voltage 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode reverse voltage 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input-diode forward current: Continuous 60 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (1 µs, 300 pps) 3 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor continuous collector current 100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25°C free-air temperature:
Infrared-emitting diode (see Note 2) 100 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 3) 300 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous power dissipation at (or below) 25°C lead temperature:
Infrared-emitting diode (see Note 4) 100 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Phototransistor (see Note 5) 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating temperature range, TA –55°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –55°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
NOTES: 1. This value applies when the base-emitter diode is open-circulated.
2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C.
3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C.
4. Derate linearly to 100°C lead temperature at the rate of 1.33 mW/°C. Lead temperature is measured on the collector lead
0.8 mm (1/32 inch) from the case.
5. Derate linearly to 100°C lead temperature at the rate of 6.7 mW/°C.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
6
5
4
ANODE
CATHODE
NC
BASE
COLLECTOR
EMITTER
DCJ† OR 6-TERMINAL DUAL-IN-LINE PACKAGE
(TOP VIEW)
†4N35 only
NC – No internal connection
schematic
ANODE
CATHODE
NC
COLLECTOR
BASE
EMITTER
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0, IF = 0 70†V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA, IB = 0, IF = 0 30†V
V(BR)EBO Emitter-base breakdown voltage IE = 100 µA, IC = 0, IF = 0 7†V
IRInput diode static reverse current VR = 6 V 10†µA
IIO Input-to-output current VIO = rated peak value, t = 8 ms 100 mA
VCE = 10 V, IF = 10 mA, IB = 0 10†
IC(on) On-state collector current VCE = 10 V,
TA = –55°CIF = 10 mA, IB = 0, 4†mA
()
VCE = 10 V,
TA = 100°CIF = 10 mA, IB = 0, 4†
VCE = 10 V, IF = 0 IB = 0 1 50 nA
IC(off) Of f-state collector current VCE = 30 V,
TA = 100°CIF = 0, IB = 0, 500†µA
hFE T ransistor static forward current transfer ratio VCE = 5 V, IC = 10 mA, IF = 0 500
IF = 10 mA 0.8†1.5†
VFInput diode static forward voltage IF = 10 mA, TA = –55°C0.9†1.7†V
IF = 10 mA, TA = 100°C0.7†1.4†
VCE(sat) Collector-emitter saturation voltage IC = 0.5 mA, IF = 10 mA, IB = 0 mA 0.3†V
rIO Input-to-output internal resistance VIO = 500 V, See Note 6 1011† Ω
Cio Input-to-output capacitance VIO = 0, f = 1 MHz, See Note 6 1 2.5†pF
†JEDEC registered data
NOTE 6: These parameters are measured between both input-diode leads shorted together and all the phototransistor leads shorted together .
switching characteristics at 25°C free-air temperature†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton T ime-on time VCC = 10 V, IC
(
on
)
= 2 mA, 7 10
µs
toff Turn-off time
CC
RL = 100 Ω,
C(on)
See Figure 1 7 10 µ
s
†JEDEC registered data
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUIT
+
–VCC = 10 V
Input
Output
(see Note B)
RL = 100 Ω
47 Ω
ton toff
90%
10%
Output
Input
0 V
VOLTAGE WAVEFORMS
NOTES: A. The input waveform is supplied by a generator with the following characteristics: ZO = 50 Ω, tr ≤ 15 ns, duty cycle
1%,
tw = 100 µs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr ≤ 12 ns, Rin ≥ 1 MΩ, Cin ≤ 20 pF.
Figure 1. Switching Times
TYPICAL CHARACTERISTICS
Figure 2
1
0.4
0.10 102030405060
– Off-State Collector Current – nA
OFF-STATE COLLECTOR CURRENT
vs
FREE-AIR TEMPERATURE
10,000
70 80 90 100
10
4
100
40
1,000
400
4,000
TA – Free-Air Temperature – °C
IC(off)
VCE = 10 V
IB = 0
IF = 0
Figure 3
1.2
0.2
0.8
0
1.6
1
0.1 0.4 2 20 100
1.4
0.4
0.6
TRANSISTOR STATIC FORWARD
CURRENT TRANSFER RATIO (NORMALIZED)
vs
ON-STATE COLLECTOR CURRENT
IC(on) – On-State Collector Current – mA
0.2 1 4 10 40
VCE = 5 V
IF = 0
TA = 25°C
Normalized to 1 V
at IC = 1 mA
Transistor Static Forward Current Transfer Ratio (Normalized)
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 4
4
1
0.1
0.04
0.01
10
0.4
1 4 10 40 100 400 1000
– Collector Current – mA
COLLECTOR CURRENT
vs
MODULATION FREQUENCY
2
0.2
0.02
IC
fmod – Modulation Frequency – kHz
VCC = 10 V
IB = 0
TA = 25°CRL = 100 Ω
RL = 1 Ω
RL = 475 Ω
Figure 5
80
60
20
00 0.2 0.4 0.6 0.8 1 1.2
– Forward Current – mA
100
140
INPUT-DIODE FORWARD
CONDUCTION CHARACTERISTICS
160
1.4 1.6 1.8 2
40
120
IF
VF – Forward Voltage – V
TA = 25°C
TA = 70°C
TA = 25°C
Figure 6
0.04
0.01
0.1
0.1 0.4 1 4 10 40 100
– Collector Current – mA
COLLECTOR CURRENT
vs
INPUT-DIODE FORWARD CURRENT
0.4
1
4
10
40
100
IC
IF – Input-Diode Forward Current – mA
VCE = 10 V
IB = 0
TA = 25°C
Figure 7
30
20
10
00 2 4 6 8 10 12
40
50
COLLECTOR CURRENT
vs
COLLECTOR-EMITTER VOLTAGE
60
14 16 18 20
– Collector Current – mA
IC
VCE – Collector-Emitter Voltage – V
Max Continuous
Power Dissipation
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
IB = 0
TA = 25°C
See Note A
NOTE A. Pulse operation of input diode is required for operation
beyond limits shown by dotted lines.
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.8
0.4
0.2
0
1.2
1.4
ON-STATE COLLECTOR CURRENT
(RELATIVE TO VALUE AT 25°C)
vs
FREE-AIR TEMPERATURE
1.6
1
0.6
–75 –50 –25 0 25 50 75 100 125
TA – Free-Air Temperature – °C
VCE = 10 V
IB = 0
IF = 10 mA
See Note A
NOTE A. These parameters were measured using pulse
techniques, tw = 1 ms, duty cycle ≤ 2 %.
(Relative to Value at
On-State Collector Current
A°= 25 C)T
Figure 8
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
The devices consist of a gallium-arsenide infrared-emitting diode and an npn silicon phototransistor. Each
device is available in a 6-terminal plastic dual-in-line package, shown in Figure 9, or in a DCJ plastic dual
surface-mount optocoupler package (see Mechanical Data).
CL
C
0.021 (0,534)
0.015 (0,381)
6 Places
Seating Plane
L0.300 (7,62) T.P.
(see Note A)
0.260 (6,61)
0.240 (6,09)
0.012 (0,305)
0.008 (0,203)
0.215 (5,46)
0.115 (2,92) 0.070 (1,78)
0.020 (0,51)
0.090 (2,29)
0.050 (1,27)
4 Places
0.040 (1,01) MIN
0.070 (1,78) MAX
6 Places
0.370 (9,40)
0.330 (8,38)
Index Dot
(see Note B)
105°
90°
1 2 3
6 5 4
(see Note C)
0.150 (3,81)
0.125 (3,17)
0.100 (2,54) T.P.
(see Note A)
NOTES: A. Terminals are within 0.005 (0,13) radius of true position (T.P.) with maximum material condition and unit installed.
B. Terminal 1 identified by index dot.
C. The dimensions given fall within JEDEC MO-001 AM dimensions.
D. All linear dimensions are in inches (millimeters).
Figure 9. Plastic Dual-in-Line Package
4N35, 4N36, 4N37
OPTOCOUPLERS
SOES021C – NOVEMBER 1981 – REVISED APRIL 1998
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL DATA
DCJ (R-PDSO-G6) PLASTIC DUAL SMALL-OUTLINE OPTOCOUPLER
0.385 (9,78)
0.405 (10,29)
0.020 (0,51) MAX
0.150 (3,81) MAX
0.050 (1,27)
0.090 (2,29)
0.370 (9,40)
0.330 (8,38)
1
6
0.240 (6,10)
3
0.045 (1,14)
0.070 (1,78)
0.260 (6,60)
4
Seating Plane
0.010 (0,25)
0.030 (0,76) MIN
0.008 (0,20) NOM
Gage Plane
0.100 (2,54)
0.004 (0,10)
0°–5°
4073328/A 10/96
NOTES: A. All linear dimensions are in inches (millimeters)
B. This drawing is subject to change without notice.
C. Terminal 1 identified by index dot.
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
4N35 OBSOLETE PDIP N 6 TBD Call TI Call TI
4N35DCJ OBSOLETE OPTO DCJ 6 TBD Call TI Call TI
4N36 OBSOLETE PDIP N 6 TBD Call TI Call TI
4N37 OBSOLETE PDIP N 6 TBD Call TI Call TI
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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PACKAGE OPTION ADDENDUM
www.ti.com 8-Apr-2005
Addendum-Page 1
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