MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter PARAMETER VALUE UNIT VCBO -40 V VCEO -40 V VEBO -5 V IC -200 mA hFE 300 Package SOT-23 Configuration Single Die MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 0.008g(approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER Marking code on the device SYMBOL MMBT3906 2A UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current, dc IC -200 mA Power dissipation PD 350 mW Junction temperature TJ -55 to +150 C Storage temperature TSTG -55 to +150 C 1 Version: H2001 MMBT3906 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RJA 357 C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN MAX UNIT Collector-base breakdown voltage IC = -10 A, IE = 0 V(BR)CBO -40 - V Collector-emitter breakdown voltage IC = -1 mA, IB = 0 V(BR)CEO -40 - V Emitter-base breakdown voltage IE = -10 A, IC = 0 V(BR)EBO -5 - V Collector base cutoff current VCB = -40 V ICBO - -100 nA Emitter base cutoff current VEB = -6 V IEBO - -50 nA VCE = -1 V, IC = -0.1 mA 60 VCE = -1 V, IC = -1 mA 80 VCE = -1 V, IC = -10 mA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 60 VCE = -1 V, IC = -100 mA 30 IC = -10 mA, IB = -1 mA IC = -50 mA, IB = -5 mA IC = -10 mA, IB = -1 mA IC = -50 mA, IB = -5 mA f= 100MHz f=1MHz, VCB = -5 V, Output capacitance IE = 0 VCC= -3V, VBE= -0.5V, Delay time 100 VCE = -1 V, IC = -50 mA VCE = -20 V , IC = -10 mA, Transition frequency hFE IC= -10mA 300 - -0.25 - -0.4 -0.65 -0.85 - -0.95 fT 250 - MHz COBO - 4.5 pF td - 35 ns VCE(sat) VBE(sat) V V Rise time IB1= -1mA tr - 35 ns Storage time VCC= -3V, IC= -10mA ts - 225 ns Fall time IB1= IB2= -1mA tf - 75 ns ORDERING INFORMATION ORDERING CODE PACKAGE PACKING MMBT3906 RF SOT-23 3K / 7" Reel MMBT3906 RFG SOT-23 3K / 7" Reel MMBT3906 R5 SOT-23 10K / 13" Reel MMBT3906 R5G SOT-23 10K / 13" Reel Note: "G" means green compound (halogen free) 2 Version: H2001 MMBT3906 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Capacitance Fig.2 Charge Data 10 10000 Q Charge (pC) VCC = 40 V ID/IB = 10 Capacitance (pF) Cobo Cibo QT 1000 100 QA 1 10 0.1 1 10 100 1 10 100 1000 IC - Collector Current (mA) Reverse Bias (V) Fig.3 Turn - On Time Fig.4 Fall Time 1000 1000 VCC = 40 V IB1 = IB2 IC/IB = 10 Time (ns) tf - Fall Time (ns) 1r @ VCC = 3.0 V 100 15 V 40 V 10 2.0 V 100 IC/IB = 20 10 IC/IB = 10 1d @ VOB = 0 V 1 1 1 10 100 1000 1 10 100 1000 IC, Collector Current (mA) IC , Collector Current (mA) 3 Version: H2001 MMBT3906 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.5 Noise Figure VS. Frequency Fig.6 Noise Figure VS. Source Resistance 12 5 10 NF, Noise Figure (dB) 4 NF - Noise Figure (dB) f = 1.0 kHz Source Resistance = 200 IC = 1.0 mA Source Resistance = 2.0 K IC = 0.5 mA 3 Source Resistance = 2.0 K IC = 50A 2 Source Resistance = 2.0 K IC = 100 A 1 IC = 1.0 mA IC = 0.5 mA 8 6 4 IC = 50 A IC = 100 A 2 0 0 0.1 1 10 0.1 100 10 100 Rg, Source Resistance (kOhms) f - Frequency (kHz) Fig.7 Current Gain Fig.8 Output Admittance 100 hoe, Output Admittance (u mhos) 1000 hFE , DC Current Gain 1 100 10 1 0.1 10 0.1 1 0.1 10 IC, Collector Current (mA) 1 10 IC, Collector Current (mA) 4 Version: H2001 MMBT3906 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.9 Input Impedance Fig.10 Voltage Feedback Ratio 10 hre , Voltage Feedback Ratio (x10-4) hie , Input Impedance (k) 100 10 1 0.1 1 0.1 0.1 1 10 0.1 1 IC - Collector Current (mA) IC - Collector Current (mA) Fig.11 "ON" Voltages Fig.12 Temperature Coefficients 1 1 0.5 y , Temperature( o C) 0.8 V, Voltage 10 VCE @ IC/IB = 10 0.6 0.4 0.2 0 +25oC to +125oC -0.5 -1 -55oC to +25oC -1.5 VB for VBE9sat) 0 -2 1 10 100 1000 0 IC , Collector Current (mA) 50 100 150 200 IC, Collector Current (mA) 5 Version: H2001 MMBT3906 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOT-23 SUGGESTED PAD LAYOUT 6 Version: H2001 MMBT3906 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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