MMBT3906
Taiwan Semiconductor
1 Version: H2001
350mW, PNP Small Signal Transistor
FEATURES
● Low power loss, high efficiency
● Ideal for automated placement
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOT-23
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 0.008g(approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VCBO -40 V
VCEO -40 V
VEBO -5 V
IC -200 mA
hFE 300
Package SOT-23
Configuration Single Die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
MMBT3906
UNIT
Marking code on the device 2A
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -40 V
Emitter-base voltage VEBO -5 V
Collector current, dc IC -200 mA
Power dissipation PD 350 mW
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C
MMBT3906
Taiwan Semiconductor
2 Version: H2001
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 357 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN MAX UNIT
Collector-base breakdown voltage IC = -10 μA, IE = 0 V(BR)CBO -40 - V
Collector-emitter breakdown voltage IC = -1 mA, IB = 0 V(BR)CEO -40 - V
Emitter-base breakdown voltage IE = -10 μA, IC = 0 V(BR)EBO -5 - V
Collector base cutoff current VCB = -40 V ICBO - -100 nA
Emitter base cutoff current VEB = -6 V IEBO - -50 nA
DC current gain
VCE = -1 V, IC = -0.1 mA
hFE
60
300
VCE = -1 V, IC = -1 mA 80
VCE = -1 V, IC = -10 mA 100
VCE = -1 V, IC = -50 mA 60
VCE = -1 V, IC = -100 mA 30
Collector-emitter saturation voltage IC = -10 mA, IB = -1 mA VCE(sat) - -0.25
V
IC = -50 mA, IB = -5 mA - -0.4
Base-emitter saturation voltage IC = -10 mA, IB = -1 mA VBE(sat) -0.65 -0.85
V
IC = -50 mA, IB = -5 mA - -0.95
Transition frequency VCE = -20 V , IC = -10 mA,
f= 100MHz fT 250 - MHz
Output capacitance f=1MHz, VCB = -5 V,
IE = 0 COBO - 4.5 pF
Delay time VCC= -3V, VBE= -0.5V,
IC= -10mA td - 35 ns
Rise time IB1= -1mA tr - 35 ns
Storage time VCC= -3V, IC= -10mA ts - 225 ns
Fall time IB1= IB2= -1mA tf - 75 ns
ORDERING INFORMATION
ORDERING CODE PACKAGE PACKING
MMBT3906 RF SOT-23 3K / 7" Reel
MMBT3906 RFG SOT-23 3K / 7" Reel
MMBT3906 R5 SOT-23 10K / 13" Reel
MMBT3906 R5G SOT-23 10K / 13" Reel
Note: “G” means green compound (halogen free)
MMBT3906
Taiwan Semiconductor
3 Version: H2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Capacitance
Fig.2 Charge Data
Fig.3 Turn - On Time
Fig.4 Fall Time
1
10
0.1 1 10 100
Cobo
Cibo
10
100
1000
10000
1 10 100 1000
VCC = 40 V
ID/IB= 10 QT
QA
1
10
100
1000
1 10 100 1000
IC/IB= 10
1r @ VCC = 3.0 V
1d @ VOB = 0 V
15 V
40 V
2.0 V
1
10
100
1000
1 10 100 1000
VCC = 40 V
IB1 = IB2
IC/IB= 20
IC/IB= 10
Q Charge (pC)
Reverse Bias (V)
Time (ns)
IC , Collector Current (mA)
tf - Fall Time (ns)
IC, Collector Current (mA)
IC - Collector Current (mA)
Capacitance (pF)
MMBT3906
Taiwan Semiconductor
4 Version: H2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Noise Figure VS. Frequency Fig.6 Noise Figure VS. Source Resistance
Fig.7 Current Gain
Fig.8 Output Admittance
0
1
2
3
4
5
0.1 1 10 100
Source Resistance = 200 Ω
IC = 1.0 mA
Source Resistance = 2.0 K
I
C
= 0.5 mA
Source Resistance = 2.0 K
IC= 100 μA
Source Resistance = 2.0 K
IC= 50μA
0
2
4
6
8
10
12
0.1 1 10 100
f = 1.0 kHz
IC = 1.0 mA
IC= 0.5 mA
IC = 50 μA
IC= 100 μA
10
100
1000
0.1 1 10
0.1
1
10
100
0.1 1 10
NF, Noise Figure (dB)
f
- Frequency (kHz)
IC, Collector Current (mA)
hoe, Output Admittance (u mhos)
IC, Collector Current (mA)
Rg, Source Resistance (kOhms)
NF - Noise Figure (dB)
hFE , DC Current Gain
MMBT3906
Taiwan Semiconductor
5 Version: H2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.9 Input Impedance
Fig.10 Voltage Feedback Ratio
Fig.11 "ON" Voltages
Fig.12 Temperature Coefficients
0.1
1
10
100
0.1 1 10
0.1
1
10
0.1 1 10
0
0.2
0.4
0.6
0.8
1
1 10 100 1000
VCE @ IC/IB= 10
-2
-1.5
-1
-0.5
0
0.5
1
0 50 100 150 200
ΘVB for VBE9sat)
+25oC to +125oC
-55oC to +25oC
hre , Voltage Feedback Ratio (x10
-4
)
I
C
- Collector Current (mA)
IC , Collector Current (mA)
θy , Temperature( o C)
IC, Collector Current (mA)
IC - Collector Current (mA)
hie , Input Impedance (kΩ)
V, Voltage
MMBT3906
Taiwan Semiconductor
6 Version: H2001
PACKAGE OUTLINE DIMENSION
SOT-23
SUGGESTED PAD LAYOUT
MMBT3906
Taiwan Semiconductor
7 Version: H2001
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
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for application assistance or the design of Purchasers’ products.
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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