AO4260
60V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 18A
R
DS(ON)
(at V
GS
=10V) < 5.2mΩ
R
DS(ON)
(at V
GS
=4.5V) < 6.3mΩ
100% UIS Tested
100% R
g
Tested
Symbol
The AO4260 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
, Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
60V
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
Symbol
V
DS
V
GS
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
16 75
24
T
A
=25°C
T
A
=70°C
Power Dissipation
B
P
D
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=25°C mJ
Avalanche Current
C
211 A65
A
I
D
18
14
130
V
Maximum
Parameter
V±20Gate-Source Voltage
Drain-Source Voltage 60
UnitsParameter Typ Max °C/W
R
θJA
31
59 40
Maximum Junction-to-Ambient
A
Thermal Characteristics
W
3.1
2
T
A
=70°C
Junction and Storage Temperature Range -55 to 150 °C
Rev 1: Mar. 2012
www.aosmd.com Page 1 of 6
AO4260
Symbol Min Typ Max Units
BV
DSS
60 V
V
DS
=60V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.3 1.8 2.4 V
I
D(ON)
130 A
4.3 5.2
T
J
=125°C 6.9 8.4
5 6.3 mΩ
g
FS
70 S
V
SD
0.68 1 V
I
S
4.5 A
C
iss
4940 pF
C
oss
445 pF
C
rss
32 pF
R
g
0.4 0.9 1.4 Ω
Q
g
(10V) 71 100 nC
Q
g
(4.5V) 31 45 nC
Q
gs
12.5 nC
Q
gd
8.5 nC
t
D(on)
8.5 ns
t
8.5
ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=18A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS,
I
D
=250µA
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=18A
V
GS
=4.5V, I
D
=16A
Forward Transconductance
Diode Forward Voltage
Turn-On Rise Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
=10V, V
=30V, R
=1.67
Ω
,
Reverse Transfer Capacitance V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=18A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
t
r
8.5
ns
t
D(off)
50 ns
t
f
15.5 ns
t
rr
22 ns
Q
rr
96 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=18A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
I
F
=18A, dI/dt=500A/µs
Turn-Off Fall Time
V
GS
=10V, V
DS
=30V, R
L
=1.67
Ω
,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 1: Mar. 2012 www.aosmd.com Page 2 of 6
AO4260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
2
4
6
8
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=16A
VGS=10V
ID=18A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
100
120
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
4V
10V 3.5V
4.5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
2
4
6
8
10
12
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=18A
25°C
125°C
Rev 1: Mar. 2012 www.aosmd.com Page 3 of 6
AO4260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50 60 70 80
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
1000
2000
3000
4000
5000
6000
0 10 20 30 40 50 60
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=30V
ID=18A
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100µs
10ms
1
10
100
1000
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
1
10
100
1000
10000
0.00001 0.001 0.1 10
1000
Power (W)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
TA=25°C
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
(Note C)
Rev 1: Mar. 2012 www.aosmd.com Page 4 of 6
AO4260
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Rev 1: Mar. 2012 www.aosmd.com Page 5 of 6
AO4260
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 1: Mar. 2012 www.aosmd.com Page 6 of 6