GE SOLID STATE Oh Def 3875081 OOl?bbb 3 , 3875081 G E SOLID STATE O1E 17666 D Sillcon Controlled Rectifiers T 25 (S . '2N681-2N692 File Number 96 25-A Silicon Controlled TERMINAL DESIGNATIONS - Rectifiers CATHODE For Power-Control and Power-Switching Application Features: High di/dt capability s Low on-state voltage at high current levels Low thermal resistance $2CS e277 3M The RCA2N681-2N692 are all-diffused silicon controlled rectifiers (reverse-blocking triode thrysistors) designed for JEDEG TO-208AA switching ac and de currents. These devices can switch from the off-state to the on-state when both the anode and gate voltages are positive. Negative anode voltages make these devices revert to the blocking state, These SCRs employ a hermetic JEDEC TO-208AA package. MAXIMUM RATINGS, Absolute-Maximum Values: 2N681 2N682 2N683 2N684 2NG8S 2NG86 INEST 2N688 2NG89 2N6S0 2NE9i 2N692 Vaso ccsccrsceneeetsien 35 75 150 225 300 350 400 500 600 720 840 960 V Vero d . 50 100 150 200 250 300 400 $00 600 700 800 COV Vorow & . 2 50 100 150 200 250 300 400 500 600 700 800 CU Vrumass (6 25 A "tran (9 = 180}: Te = 65C... 16 Istut For one full cycle ot applied principal voltage poe edenetteeraee 150 A SOHZE esse esectnuenee 140 A For more than one full cycle ot applied principal voltage ., See Fig. 2 di/dt: Vo = Vonou, lor = 200 mA, LHO5 US creer e nesses 200 Als PA [af To shown for Ireaas): =10Ms ....6, desenee 100 As SUMS coeseeteeeeeee 46 As PoMl ccs cceeececsesecnee 5 w Pawn ccceescrercectenee 05 w loa cteeenreeencenerenes 2 A VOM tect ece cee renucrenee 10 v VGRt coos acarensee teves 5 v Tata Mac cn eee reeeeenare - 65 to 150 C ToM ve seeeee te reeeanes ' -65 to 125 S Tr Buring soldering for 10 s maxi- mum (terminal and case) ,,. 225 = C ra: Recommended .,..00100 35 in-Ib ateneeneee 0.4 kgf-m Maximum {D0 NOT EXCEED} 50 in-ib 0.67 kgf-m in accordance with JEDEC regisiralion dala AThese values do nol apply if there Is a positive gate signal, Gate must be open of negatively biased SAT Iam = 25 A and Te = 65C. Any product gate current ard gate voltage which results in gate power tess than Ihe maximum ts permitted, wFor tempe: point, see D Fonat Outline. 672 1209 B-14 G E SOLID STATE Oi DE 307508 oorue? s weysoai GE SOLID'STATES OC 17667, TASS Sillcon Controlled Rectitlers 2N681-2N692 ELECTRICAL CHARACTERISTICS, At Maximum Ratings Unless Otherwise Specilied and at Indicated Case Temperature (T,} LIMITS CHARACTERISTIC 2N681-2N690 UNITS e MIN. TYP. MAX, lonom OF Inno 0 = Vonom Or Va = Venom To = 125C: 2N6381, 2N682, 2N683, 2N684 ........., ' - - 65 - _ 6 - - 5.5 mA _ 5 _ _ 4 ~ - 3 - - 25 - _ 2.25 _ _ 2 Vy i, = 50 A (peak), Te = 26C vo. eee eee - - 2 V Vy(AV}: by = hy (RMS) = Te 2 68C oe cece _ - 0.86 Vv to! Te 125 vices ees ce cee e cence ren eeenes _ 15 _ mA ler Te = 125 ever eevee sence een eneeenes - - 25 mA Vp = 12 V (de), R, = 509, T, = -65C ..,., - _ 80 Vor Vp = 12 V (dc), Ry = 50, T, = -65 to 125C _ - 3 Vv = 125 0.25 _ al Rasc Bere ehh meee eee ence tenn eens _ _ 2 Cw In accordance with JEDEC registration data, 9 6 AVEAAGE FORWARD CURRENT (Ip)--ANPERES . s2cs-irszens, Fig. 1 Maximum allowable case temperature vs. on-state * current for 2N6B1-2N692. MAM AATEO VALUE . bao awe? SURGE- CURRENT OURATION==GYCLES, face -1OR Fig. 2 Paak surge on-state currant vs. surge duration for 2N681-2N692. 1210 c-Ol 673 ne G E SOLID STATE O1 De) 375081 OO?bbA 7 i 3875081 G E SOLID STATE O1E 17668 07> 25-/S ~ Silicon Controlled Rectifiers 2N681-2N692 NATURAL COOLING. SINGLE-PHASE OPERATION. CONDUC: ANGLE +180 CONTROLLED-RECTIFIER STUD MOUNTEO OIRECTLY ON HEAT SINK. HEAT SINKII/IS THICK COPPER WITH A MAT-BLACK SURFACE ANO THERMAL EMISSIVITY OF 0.9 a5 su 35 is . INSTANTANEOUS FORWARD VOLTAGE OROP (vp]VOLTS | FREE-AIR rar" wics-iT 92S -1s16at Fig. 3 Typical on-state current vs. instantaneous on-state vol- Fig. 4 Average on-state forward current vs. ambient temper- tage for 2N681-2N692. ature for 2N681-2N6$92. 674 1211 c-02