LS4154
www.vishay.com Vishay Semiconductors
Rev. 1.8, 14-Jul-17 1Document Number: 85564
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: QuadroMELF (SOD-80)
Weight: approx. 34 mg
Cathode band color: black
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon epitaxial planar diode
• Electrical data identical with the device 1N4154
• QuadroMELF package
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
Available
Models
PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
LS4154 LS4154GS18 or LS4154GS08 - Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 35 V
Reverse voltage VR25 V
Peak forward surge current tp = 1 μs IFSM 2A
Repetitive peak forward current IFRM 500 mA
Forward continuous current IF300 mA
Average forward current VR = 0 IF(AV) 150 mA
Power dissipation Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air On PC board
50 mm x 50 mm x 1.6 mm RthJA 500 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
LS4154
www.vishay.com Vishay Semiconductors
Rev. 1.8, 14-Jul-17 2Document Number: 85564
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 30 mA VF1V
Reverse voltage VR = 25 V IR100 nA
VR = 25 V, Tj = 150 °C IR100 μA
Breakdown voltage IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms V(BR) 35 V
Diode capacitance VR = 0, f = 1 MHz,
VHF = 50 mV CD4pF
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA trr 4ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ωtrr 2ns
0 40 80 120 160
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
200
94 9154
V
R
= 25 V
Scattering Limit
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V - Forward Voltage (V)
2.0
94 9152 F
T = 25 °C
j
T = 100 °C
j
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
100
94 9156
2.5 f = 1 MHz
T
j
= 25 °C
LS4154
www.vishay.com Vishay Semiconductors
Rev. 1.8, 14-Jul-17 3Document Number: 85564
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF (SOD-80)
96 12071
Cathode identification
1.25 (0.049) min.
3.7 (0.146)
3.3 (0.130)
0.47 (0.019) max.
2.5 (0.098) max.
1.6 (0.063)
1.4 (0.055)
5 (0.197) ref.
Foot print recommendation:
2 (0.079) min.
> R3 (R0.118)
glass
1.7 (0.067)
glass
The gap between plug and glass can
be either on cathode or anode side
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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