2011-09-01
Rev 1.5 Page 1
SPP80P06P H
SIPMOS Power-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
d
v
/d
t
rated
·
175°C operating temperature
Product Summary
Drain source voltage V
V
DS -60
Drain-source on-state resistance
R
DS(on) 0.023
W
Continuous drain current A
I
D-80
Type Package
SPP80P06P H PG-TO220-3
Pin 1 PIN 2/4 PIN 3
GDS
Maximum Ratings,at
T
j = 25 °C, unless otherwise specified
Parameter Symbol UnitValue
-80
-64
Continuous drain current
T
C = 25 °C, 1)
T
C = 100 °C
A
I
D
Pulsed drain current
T
C = 25 °C
I
D puls -320
Avalanche energy, single pulse
I
D = -80 A ,
V
DD = -25 V,
R
GS = 25
W
823 mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR 34
d
v
/d
t
6Reverse diode d
v
/d
t
I
S = -80 A,
V
DS = -48 , d
i
/d
t
= 200 A/µs,
T
jmax = 175 °C
kV/µs
Gate source voltage
V
GS ±20 V
Power dissipation
T
C = 25 °C
P
tot 340 W
Operating and storage temperature
T
j ,
T
stg -55...+175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
1Current limited by bondwire; with an
R
thJC = 0.4 K/W the chip is able to carry
I
D = -91A
Lead free
Yes
° Halogen-free according to IEC61249-2-21
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175°C operating temperature
• Pb-free lead plating; RoHs compliant
• Qualified according to AEC Q101
2011-09-01
Rev 1.5 Page 2
SPP80P06P H
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
R
thJC - 0.4-Thermal resistance, junction - case K/W
- 62
R
thJA
Thermal resistance, junction - ambient, leaded -
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -250 µA
V
(BR)DSS -60 - V-
Gate threshold voltage,
V
GS =
V
DS
I
D = -5.5 mA -2.1 -3 -4
V
GS(th)
Zero gate voltage drain current
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -60 V,
V
GS = 0 V,
T
j = 150 °C
µA
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS - -10 -100Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V nA
Drain-source on-state resistance
V
GS = -10 V,
I
D = -64 A
R
DS(on) - 0.021 0.023
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2011-09-01
Rev 1.5 Page 3
SPP80P06P H
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
³
2*
I
D*
R
DS(on)max ,
I
D = -64 A 18
g
fs S-36
Input capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
iss 4026 5033 pF-
C
oss - 15651252Output capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz 546437
C
rss -
Turn-on delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -64 A,
R
G = 1
W
- 36 ns24
t
d(on)
Rise time
V
DD = -30 V,
V
GS = -10 V,
I
D = -64 A,
R
G = 1
W
t
r- 2718
56 84
t
d(off)
Turn-off delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -64 A,
R
G = 1
W
-
Fall time
V
DD = -30 V,
V
GS = -10 V,
I
D = -64 A,
R
G = 1
W
t
f- 30 45
2011-09-01
Rev 1.5 Page 4
SPP80P06P H
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified Unit
ValuesSymbolParameter
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD = -48 V,
I
D = -80 A -
Q
gs nC4127.4
Gate to drain charge
V
DD = -48 V,
I
D = -80 A
Q
gd 50 75-
173-
Q
g
Gate charge total
V
DD = -48 V,
I
D = -80 A,
V
GS = 0 to -10 V 115
Gate plateau voltage
V
DD = -48 V ,
I
D = -80 A
V
(plateau) - -6.2 - V
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C = 25 °C
I
S- - -80 A
Inverse diode direct current,pulsed
T
C = 25 °C
I
SM - - -320
Inverse diode forward voltage
V
GS = 0 V,
I
F = -80 A
V
SD - -1.2 -1.6 V
Reverse recovery time
V
R = -30 V,
I
F=
I
S , d
i
F/d
t
= 100 A/µs
t
rr - 117 175 ns
Reverse recovery charge
V
R = -30 V,
I
F=
l
S , d
i
F/d
t
= 100 A/µs
Q
rr - 420 630 nC
2011-09-01
Rev 1.5 Page 5
SPP80P06P H
Drain current
I
D =
f
(
T
C)
parameter:
V
GS
³
10 V
0 20 40 60 80 100 120 140 160°C 190
T
C
0
-10
-20
-30
-40
-50
-60
-70
A
-90
SPP80P06P
I
D
Power dissipation
P
tot =
f
(
T
C)
0 20 40 60 80 100 120 140 160°C 190
T
C
0
40
80
120
160
200
240
280
W
360
SPP80P06P
P
tot
Transient thermal impedance
Z
thJC =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP80P06P
Z
thJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
C = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
V
DS
0
-10
1
-10
2
-10
3
-10
A
SPP80P06P
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 14.0µs
2011-09-01
Rev 1.5 Page 6
SPP80P06P H
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0 -20 -40 -60 -80 -100 -120 A-160
I
D
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.055
0.060
W
0.075
SPP80P06P
R
DS(on)
b
V
GS [V] =
b
-4.5
c
c
-5.0
d
d
-5.5
e
e
-6.0
f
f
-6.5
g
g
-7.0
h
h
-7.5
i
i
-8.0 j
j
-9.0 k
k
-10.0
Typ. output characteristic
I
D =
f
(
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0 -1 -2 -3 -4 -5 -6 -7 -8 V-10
V
DS
0
-20
-40
-60
-80
-100
-120
-140
-160
A
-190
SPP80P06P
I
D
V
GS [V]
a
a -4.0
b
b -4.5
c
c -5.0
d
d -5.5
e
e -6.0
f
f -6.5
gg -7.0
h
h -7.5
i
i -8.0
j
j -9.0
k
P
tot = 340.00W
k -10.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS
³
2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
V
GS
0
-10
-20
-30
-40
-50
-60
A
-80
I
D
Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
0 -10 -20 -30 -40 -50 -60 -70 -80 A -100
I
D
0
5
10
15
20
25
30
35
40
S
50
g
fs
2011-09-01
Rev 1.5 Page 7
SPP80P06P H
Drain-source on-state resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = -64 A,
V
GS = -10 V
-60 -20 20 60 100 140 °C 200
T
j
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0.055
0.060
W
0.070
SPP80P06P
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -5.5 mA
-60 -20 20 60 100 140 °C 200
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th)
2%
-60 -20 20 60 100 140 °C 200
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th)
typ
-60 -20 20 60 100 140 °C 200
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th)
98%
-60 -20 20 60 100 140 °C 200
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th)
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
=1 MHz
0 -5 -10 -15 V -25
V
DS
2
10
3
10
4
10
5
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
0
10
1
10
2
10
3
10
A
SPP80P06P
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)
2011-09-01
Rev 1.5 Page 8
SPP80P06P H
Avalanche energy
E
AS =
f
(
T
j)
para.:
I
D = -80 A ,
V
DD = -25 V,
R
GS = 25
W
25 45 65 85 105 125 145 °C 185
T
j
0
100
200
300
400
500
600
700
mJ
850
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = -80 A pulsed
0 20 40 60 80 100 120 140 nC 180
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
SPP80P06P
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
f
(
T
j)
-60 -20 20 60 100 140 °C 200
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
SPP80P06P
V
(BR)DSS
SPP80P06PH
Rev1.5
2011-09-01
PG-TO220-3
Page 9
SPP80P06PH
Rev 1.5
2011-09-01
PG-TO263-3
Page 10
2011-09-01
Rev 1.5 Page 11
SPP80P06P H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
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).
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