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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A
Power management (dual transistors)
VT6X11
zStructure zDimensions (Unit : mm)
NPN silicon epitaxial planar transistor
zFeatures
1) Very small package with two transistors.
2) Suitable for current mirror circuits.
zApplications
Current mirror circuits
zPackaging specifications zInner circuit
Package
Code
Taping
Basic ordering
unit (pieces)
T2R
8000
VT6X11
Type
z Absolute maximum ratings (Ta=25°C)
Symbol Limits Unit
VCBO 20 V
20 V
V
VCEO
VEBO 5
mA400
IC
ICP
mA200
Tj150 °C
Tstg 55 to +150 °C
PD120
150 mW
mW
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Range of storage temperature
Power dissipation
1 Pw=1mS Single pulse
2 Each terminal mounted on a recommended land
Parameter
Total
Element
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
20
20
5
400
0.12
2
0.1
0.1
0.30
V
V
V
µA
µA
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=20V
V
EB
=5V
I
C
=100mA, I
B
=10mA
h
FE
(Tr1) /
h
FE
(Tr2)
0.9 1.1
V
CE
=10V, I
E
=−10mA, f=100MHz
V
CE
=2V, I
C
=1mA
V
CB
=10V, I
E
=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current gain ratio h
FE
120 560 V
CE
=2V, I
C
=1mA
DC current gain
(6) (5) (4)
(1) (3)(2)
Tr2
Tr1
(1) Base
(2) Emitter
(3) Emitter
(4) Collector
(5) Collector
(5) Base
(6) Collector
(6) Base
(Tr1)
(Tr1)
(Tr2)
(Tr2)
(Tr1)
(Tr2)
(Tr1)
(Tr2)
1.2
±
0.1
1.2
±
0.1
0.8
±
0.1
0.92
±
0.1
0.4 0.4
0.16
±
0.05
0 ~ 0.05
0.13
±
0.05
(1) (3)(2)
0.14
0.5
±
0.1
0.2
±
0.1
Each lead has same dimensions.
0.14
(6) (4)(5)
0.2
±
0.1
UNIT : mm
VMT6
Abbreviated symbol : X11
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.06 - Rev.A
Data Sheet VT6X11
zElectrical characteristics curves
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1
0.01
0.1
1
1 10 100 1000
0.01
0.1
1
1 10 100 1000
0
20
40
60
80
100
012345
I
B
=1.0mA I
B
=0.9mA
I
B
=0.7mA
I
B
=0.6mA
I
B
=0.5mA
I
B
=0.4mA
I
B
=0.3mA
I
B
=0.2mA
I
B
=0.1mA
I
B
=0mA
I
B
=0.8mA
10
100
1000
0.1 1 10 100 1000
0
1
10
100
0.01 0.1 1 10 100
10
100
1000
0.1 1 10 100 1000
Ta=125°C
25°C
-55°C
V
CE
=2V
I
C
/I
B
= 10/1
Ta=125°C
25°C
-55°C
I
C
/I
B
= 20/1
I
C
/I
B =
10/1
Cob
Cib
Ta=25
°C
f=1MHz
I
E
=0
I
C
=0
Ta=25
°C
Ta=25
°C
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE :
V
CE
(V) COLLECTOR CURRENT : I
C
(mA)
DC CURENT GAIN : h
FE
TRANSITION FREQUENCY :f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cob (pF)
Cib (pF)
Ta=125°C
25°C
-55°C
V
CE
=2V
V
CE
= 10V
Ta=25
°C
R0039
A
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© 2009 ROHM Co., Ltd. All rights reserved.
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