SILICON EPITAXIAL PLANAR TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. - Low Forward Voltage High Voltage Fast Reverse Recovery Time : Small Total Capacitance VFHO.94V(Typ.) VrR=400V (Min. ) trr=l.5us(Typ.) CT=3.2pF(Typ.) 1$$311 Unit in mm a| | 8 Small Package SC-59 qi < na in x a a 3 s| =e oo + oo ao | re MAXIMUM RATINGS (Ta=25C) +e | x CHARACTERISTIC SYMBOL RATING UNIT , t Maximum(Peak) Reverse Voltage VRM 420 V 5 Reverse Voltage VR 400 V 20 aL 1 N.C Maximum(Peak) Forward Current LFM 300 mA 2. ANODE 1q 3. CATHODE Average Forward Current To 100 mA JEDEC - Surge Current (10ms) Irsm 2 A EIAJ SC-59 Power Dissipation P 150 my TOSHIBA 1-3G1B Junction Temperature Tj 125 C Weight 0. 013g Storage Temperature Range Tstg -55~125 C ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.|] UNIT VF(1) IF=10mA - 0.80 - Forward Voltage Vv VF(2) | Tr=100mA - |0.94 | 1.2 I Vp=300V - - 0.1 Reverse Current RQ) R HA IR(2) | VR=400V - - 1 Total Capacitance CT Vrp=0, f=1MHz - 3.2 5.0 pF Reverse Recovery Time trr Ip=10mA - 1.5 - us Marking A B9 [a] 8 1167 1$$311 Ip (ma) FORWARD CURRENT TOTAL CAPACITANCE Cy (pF) 0.2 Ip VR 04 06 O08 10 12 14 16 FORWARD VOLTAGE Vp () Cy VR Ta= 26 f=1MHz 30 50 100 300 Vp CV) 3005 10 REVERSE VOLTAGE 1168 IR (A) REVERSE CURRENT 40 Ip VR 80 120 160 200 240 REVERSE VOLTAGE Vp (V) 280 320