!" DATASHEET WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) DATASHEET (DEVICE : WS1112, 4x4 CDMA/AMPS PAM) Issued Date : January 29, 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM0501-12 !" PRODUCT DESCRIPTION WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Power Amplifier Module for CDMA/AMPS(824-849MHz) The WS1112 is a CDMA(Code Division Multiple Access) and AMPS(Advanced Mobile Phone Service) power amplifier module designed for handsets operating in the 824-849MHz bandwidth. The WS1112 is manufactured on an advanced InGaP HBT(Hetero-junction Bipolar Transistor) MMIC(Microwave Monolithic Integrated Circuit) technology offering state-of-the-art reliability, temperature stability and ruggedness. The WS1112 meets stringent CDMA linearity requirements to and beyond 28dBm output power. The 4mmx4mm form factor 10-pin surface mount package is self contained, incorporating 50ohm input and output matching networks. General Features - 2.0um InGaP HBT Technology - Good Linearity - High Efficiency - 10-pin Surface Mounting Package(4mmx4mmx1.3mm) - 50ohm Input and Output Matching - CDMA 95A/B, CDMA2000-1X/EVDO Applications - Digital Cellular(CDMA) - Analog Cellular(AMPS) Functional Block Diagram Vref(1) Vcont(2) Bias Circuit & Control Logic RF Input (4) Input Match DA Inter Stage Match PA Output Match MMIC RF Output (8) MODULE 2 Vcc1(5) Vcc2(6) Preliminary Information WM0501-12 !" ELECTRICAL SPECIFICATIONS(1) WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Table 1. Absolute Maximum Ratings(1) Parameter Symbol Minimum Nominal Maximum Unit RF Input Power Pin - - 10 dBm DC Supply Voltage Vcc - 3.4 6.0 V DC Reference Voltage Vref - 2.85 3.3 V Tc -30 25 +110 oC Tstg -55 - +125 oC Case Operating Temperature Storage Temperature Table 2. Recommended Operating Conditions Parameter Symbol Minimum Nominal Maximum Unit DC Supply Voltage Vcc 3.2 3.4 4.2 V DC Reference Voltage Vref 2.75 2.85 2.95 V Mode Control Voltage - High Power Mode - Low Power Mode Vcont Vcont - 0 2.85 - V V Operating Frequency Fo 824 - 849 MHz Case Operating Temperature To -30 - 85 oC Table 3. Power Range Truth Table Symbol Vref Vcont(2) Range High Power(3) PR2 2.85 Low 16dBm-28dBm Low Power(3) PR1 2.85 High < 16dBm Shut Down(4) - 0 - - Power Mode (1) (2) (3) (4) 3 No damage assuming only one parameter is set at limit at a time with all other parameters set at or below nominal value. High(2.0V - 3.0V), Low(0.0V - 0.5V) To change between High Power Mode and Low Power Mode, switch Vcont accordingly In order to shut down the module, turn off Vref accordingly Preliminary Information WM0501-12 !" ELECTRICAL SPECIFICATIONS WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Table 4-1. Electrical Characteristics for CDMA Mode (Vcc=3.4V, Vref=2.85V) Characteristics Symbol Condition Min Typ Gain 1 G1 Pout=16dBm 16 20 dB Gain 2 G2 Pout=28dBm 26 29 dB Power Added Efficiency 1 PAE1 Pout=16dBm 14 18 % Power Added Efficiency 2 PAE2 Pout=28dBm 38 40 % Total Supply Current 1 Icc1 Pout=16dBm 65 85 mA Total Supply Current 2 Icc2 Pout=28dBm 465 500 mA Quiescent Current 1 Iq1 Low Power Mode 14 28 mA Quiescent Current 2 Iq2 High Power Mode 90 120 mA Reference Current Iref Pout=28dBm 4 10 mA Reference Current Iref Pout=16dBm 5 10 mA Icont Pout=16dBm 0.15 0.5 mA Ipd Vcc=3.4 Vref, Vcont=0 0.2 5 uA -52 -42 dBc -62 -54 dBc -50 -42 dBc Control Current Total Supply Current in Power-down Mode Adjacent Channel Power 1 *1 Adjacent Channel Power 2 *1 Harmonic Suppression 885KHz offset 1.98MHz offset ACPR2 low 885KHz offset ACPR1 high Pout=28dBm 1.98MHz offset ACPR2 high -60 -54 dBc Second 2f0 -35 -30 dBc Third 3f0 -55 -40 dBc VSWR 2:1 2.5:1 Stability (Spurious Output) Rx Band Noise Power *1 4 Unit Pout=16dBm Input VSWR Ruggedness ACPR1 low Max S VSWR 6:1 RxBN Pout=28dBm Ru No damage -135 -60 dBc -133 dBm/Hz 10:1 VSWR Adjacent channel power is measured using IS-95 modulated input signal Preliminary Information WM0501-12 !" ELECTRICAL SPECIFICATIONS WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Table 4-2. Electrical Characteristics for AMPS Mode (Vcc=3.4V, Vref=2.85V) Characteristics Symbol Condition Min Typ Ga Pout=31dBm 25 29 dB PAEa Pout=31dBm 50 54 % Total Supply Current Icca Pout=31dBm Quiescent Current Iqa Reference Current Iref Gain Power Added Efficiency Control Current Pout=31dBm - Icont Total Supply Current in Power-down Mode Ipd Vcc=3.4 Vref=0 Vcont=0 Max Unit 690 740 mA 90 120 mA 4 10 mA - - mA 0.2 5 uA Second 2fo -35 -30 dBc Third 3fo -55 -40 dBc VSWR 2:1 2.5:1 Harmonic Suppression Input VSWR Stability (Spurious Output) Rx Band Noise Power Ruggedness 5 S VSWR 6:1 RxBN Pout=28dBm Ru No damage Preliminary Information -135 -60 dBc -133 dBm/Hz 10:1 VSWR WM0501-12 !" CHARACTERIZATION DATA WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Icc (mA) Figure 1. Total Current vs. Output Power 550 500 450 400 350 300 250 200 150 100 50 0 -4 0 4 8 12 16 20 24 12 16 20 24 Pout (dBm) 28 32 Figure 2. Gain vs. Output Power 35 30 Gain (dB) 25 20 15 10 5 0 -4 0 4 8 28 32 Pout (dBm) 6 Preliminary Information WM0501-12 !" CHARACTERIZATION DATA WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) PAE (%) Figure 3. Power Added Efficiency vs. Output Power 50 45 40 35 30 25 20 15 10 5 0 -4 0 4 8 12 16 20 24 28 32 28 32 Pout (dBm) Figure 4. Adjacent Channel Power 1 vs. Output Power -40 ACPR1 (dBc) -45 -50 -55 -60 -65 -70 -75 -4 7 0 4 8 12 16 20 Pout (dBm) Preliminary Information 24 WM0501-12 !" CHARACTERIZATION DATA WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Figure 5. Adjacent Channel Power 2 vs. Output Power -50 ACPR2 (dBc) -55 -60 -65 -70 -75 -80 -85 -90 -4 8 0 4 8 12 16 20 Pout (dBm) Preliminary Information 24 28 32 WM0501-12 !" EVALUATION BOARD DESCRIPTION WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Figure 1. Evaluation Board Schematic Vref 1 Vref C5 100pF Vcont C6 100pF R1 10Kohm GND 10 2 Vcont GND 9 RF Out 3 GND RF Out 8 4 RF In GND 7 5 Vcc1 Vcc2 6 RF In Vcc1 C2 2.2uF C1 100pF C3 330pF C4 Vcc2 2.2uF Figure 2. Evaluation Board Assembly Diagram R1 C6 C1 C2 9 C5 C3 C4 Preliminary Information WM0501-12 !" PACKAGE DIMENSIONS AND PIN DESCRIPTIONS WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Figure 1. Package Dimensional Drawing and Pin Descriptions Pin 1 Mark 0.48 10 2 9 3 8 4 7 5 6 4 0.1 1.3 0.1 X-RAY TOP VIEW SIDE VIEW 1.0 0.3 4 0.1 1.9 Pin # 0.5 0.85 0.5 0.85 0.6 1.7 0.4 0.4 BOTTOM VIEW Name Description 1 Vref Reference Voltage 2 3 4 Vcont GND RF In Control Voltage Ground RF Input 5 Vcc1 Supply Voltage 6 Vcc2 Supply Voltage 7 GND Ground 8 9 RF Out RF Output GND Ground 10 GND Ground PIN DESCRIPTIONS all dimensions are in millimeters 10 Preliminary Information WM0501-12 !" PACKAGE DIMENSIONS AND PIN DESCRIPTIONS WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Figure 2. Marking Specification Pin 1 Mark WAVICS WS1112 Manufacturing Part Number FPYYWW 11 Lot Number FP Manufacturing Site YY Manufacturing Year WW Work Week (Package Sealed) Preliminary Information WM0501-12 !" TAPE AND REEL INFORMATION WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Figure 1. Tape and Reel Format - 4mm x 4mm NOTES 1. Package Type : 4mm x 4mm 2. Tape Width : 12mm 3. Pocket Pitch : 8mm 4. Pocket Depth : 1.6mm 5. Reel Capacity : 2500ea 6. Max Reel Dia : 13" all dimensions are in millimeters 12 Preliminary Information WM0501-12 !" TAPE AND REEL INFORMATION WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Figure 2. Plastic Reel Format - 13"/4" Detail of Pin Hole 12.00mm Size Mark(XX) 12 G all dimensions are in millimeters 13 Tape Width Preliminary Information +2.00 - 0.00 12.4 WM0501-12 !" HANDLING AND STORAGE WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) 1. ESD (Electrostatic Discharge) Electrostatic discharge occurs naturally in the environment. With the increase in voltage potential, the outlet of neutralization or discharge will be sought. If the acquired discharge route is through a semiconductor device, destructive damage will result. ESD countmeasure methods should be developed and used to control potential ESD damage during handling in a factory environment at each manufacturing site. Table 1. ESD Classification Pin # Name Description 1 Vref Reference Voltage 2 Vcont Control Voltage 3 GND Ground 4 RF In RF Input 5 Vcc1 Supply Voltage 6 Vcc2 Supply Voltage 7 GND Ground 8 RF Out RF Output 9 GND Ground 10 GND Ground HBM MM Classification +/- 2000V +/- 200V Class 2 NOTE : Module products should be considered extremely ESD sensitive 14 Preliminary Information WM0501-12 !" WS1112 HANDLING AND STORAGE Power Amplifier Module for CDMA/AMPS(824-849MHz) 2. MSL (Moisture Sensitivity Level) Plastic encapsulated surface mount package is sensitive to damage induced by absorbed moisture and temperature. WAVICS follows JEDEC Standard J-STD 020B. Each component and package type is classified for moisture sensitivity by soaking a known dry package at various temperatures and relative humidity, and times. After soak, the components are subjected to three consecutive simulated reflows. The out of bag exposure time maximum limits are determined by the classification test describe above which corresponds to a MSL classification level 6 to 1 according to the JEDEC standard IPC/JEDEC J-STD-020B and J-STD-033. WS1112 is MSL3. Thus, according to the J-STD-033 p.11 the maximum Manufacturers Exposure Time (MET) for this part is 168 hours. After this time period, the part would need to be removed from the reel, de-taped and then re-bake. Table 2. Moisture Classification Level and Floor Life MSL Level Floor Life (out of bag) at factory ambient =< 30oC/60% RH or as stated 1 Unlimited at =< 30oC/85% RH 2 1 year 2a 4 weeks 3 168 hours 4 72 hours 5 48 hours 5a 24 hours 6 Mandatory bake before use. After bake, must be reflowed within the time limit specified on the label NOTE: The MSL Level is marked on the MSL Label on each shipping bag. MSL classification reflow temperature for the WS1112 is targeted at 260oC +0/-5oC. Figure 1 and Table 3 show typical SMT profile for maximum temperature of 260oC. 15 Preliminary Information WM0501-12 !" HANDLING AND STORAGE WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Figure 1. Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5oC Table 3. Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5oC Profile Feature Sn-Pb Solder 3 oC/sec max Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (TL) 16 100 oC oC 150 60-120 sec Pb-Free Solder 3 oC/sec max 100 oC 150 oC 60-180 sec 3 oC/sec max 183 oC 60-150 sec 217 oC 60-150 sec Peak temperature (Tp) 225 +0/-5 oC 260 +0/-5 oC Time within 5 oC of actual Peak Temperature (tp) 10-30 sec 10-30 sec oC/sec Ramp-down Rate 6 Time 25 oC to Peak Temperature 6 min max. Preliminary Information max 6 oC/sec max 8 min max. WM0501-12 !" WS1112 HANDLING AND STORAGE Power Amplifier Module for CDMA/AMPS(824-849MHz) 3. Storage Conditions Packages described in this document must be stored in sealed moisture barrier, anti-static bags. Shelf life in a sealed moisture barrier bag is 12 months at <40oC and 90% relative humidity (RH) J-STD-033 p.7. 3-1. Out-of-Bag Time Duration After unpacking the device must be soldered to the PCB within 168 hours as listed in the J-STD-020B p.11 with factory conditions <30oC and 60% RH. 3-2. Baking It is not necessary to re-bake the part if both conditions( storage conditions and out-of-bag condition ) have been satisfied. Baking must be done if at least one of the conditions above have not been satisfied. The baking conditions are 125oC for 12 hours J-STD-033 p.8. CAUTION: Tape and reel materials typically cannot be baked at the temperature described above. If out-of-bag exposure time is exceeded, parts must be baked for a longer time at low temperatures, or the parts must be re-reeled, de-taped, re-baked and then put back on tape and reel. (See moisture sensitive warning label on each shipping bag for information of baking) 4. Board Rework 4-1. Component Removal, Rework and Remount If a component is to be removed from the board, it is recommended that localized heating be used and the maximum body temperatures of any surface mount component on the board not exceed 200C. This method will minimize moisture related component damage. If any component temperature exceeds 200C, the board must be baked dry per 4-2 prior to rework and/or component removal. Component temperatures shall be measured at the top center of the package body. Any SMD packages that have not exceeded their floor life can be exposed to a maximum body temperature as high as their specified maximum reflow temperature. 4-1-1. Removal for Failure Analysis Not following the requirements of 4-1 may cause moisture/reflow damage that could hinder or completely prevent the determination of the original failure mechanism. 17 Preliminary Information WM0501-12 !" WS1112 HANDLING AND STORAGE Power Amplifier Module for CDMA/AMPS(824-849MHz) 4-1-2. Baking of Populated Boards Some SMD packages and board materials are not able to withstand long duration bakes at 125C. Examples of this are some FR-4 materials, which cannot withstand a 24 hr bake at 125C. Batteries and electrolytic capacitors are also Temperature sensitive. With component and board temperature restrictions in mind, choose a bake temperature from Table 4-1 in J-STD 033; then determine the appropriate bake duration based on the component to be removed. For additional considerations see IPC-7711 and IPC-7721. 5. Derating due to Factory Environmental Conditions Factory floor life exposures for SMD packages removed from the dry bags will be a function of the ambient environmental conditions. A safe, yet conservative, handling approach is to expose the SMD packages only up to the maximum time limits for each moisture sensitivity level as shown in Table 2. This approach, however, does not work if the factory humidity or temperature are greater than the testing conditions of 30C/60% RH. A solution for addressing this problem is to derate the exposure times based on the knowledge of moisture diffusion in the component packaging materials (ref. JESD22-A120). Recommended equivalent total floor life exposures can be estimated for a range of humidity's and temperatures based on the nominal plastic thickness for each device. Table 4 lists equivalent derated floor lives for humidity's ranging from 20-90% RH for three temperatures, 20C, 25C, and 30C. This table is applicable to SMDs molded with novolac, biphenyl or multifunctional epoxy mold compounds. The following assumptions were used in calculating Table 4: 1. Activation Energy for diffusion = 0.35eV (smallest known value). 2. For 60% RH, use Diffusivity = 0.121exp (- 0.35eV/kT) mm2/s (this uses smallest known Diffusivity @ 30C). 3. For >60% RH, use Diffusivity = 1.320exp (- 0.35eV/kT) mm2/s (this uses largest known Diffusivity @ 30C). 18 Preliminary Information WM0501-12 !" HANDLING AND STORAGE WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) Table 4. Recommended Equivalent Total Floor Life (days) @ 20C, 25C & 30C For ICs with Novolac, Biphenyl and Multifunctional Epoxies (Reflow at same temperature at which the component was classified) 19 Preliminary Information WM0501-12 !" GENERAL INFORMATION WS1112 Power Amplifier Module for CDMA/AMPS(824-849MHz) WAVICS 5F Emerald Building, 1364-29 Seocho-dong, Seocho-ku, Seoul, Korea Tel : +82-2-3474-7733 Fax : +82-2-3474-6815 URL : http://www.wavics.com Email : marketing@wavics.com IMPORTANT NOTICE WAVICS Co., Ltd. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in advanced product information sheets and preliminary data sheets are assumed to be reliable; however, WAVICS assumes no responsibilities for inaccuracies. WAVICS strongly urges customers to verify that the information they are using is current before placing orders. 20 Preliminary Information WM0501-12