Preliminary Information
WS1112
WM0501-12
1
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
DATASHEET
DATASHEET
(DEVICE : WS1112, 4x4 CDMA/AMPS PAM)
Issued Date : January 29, 2005
S. W. Paek
Director, Module Group
Preliminary Information
WS1112
WM0501-12
2
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
PRODUCT DESCRIPTION
Power Amplifier Module for CDMA/AMPS(824-849MHz)
The WS1112 is a CDMA(Code Division Multiple Access) and AMPS(Advanced Mobile Phone Service)
power amplifier module designed for handsets operating in the 824-849MHz bandwidth. The WS1112
is manufactured on an advanced InGaP HBT(Hetero-junction Bipolar Transistor) MMIC(Microwave
Monolithic Integrated Circuit) technology offering state-of-the-art reliability, temperature stability and
ruggedness.
The WS1112 meets stringent CDMA linearity requirements to and beyond 28dBm output power.
The 4mmx4mm form factor 10-pin surface mount package is self contained, incorporating 50ohm input
and output matching networks.
General Features
- 2.0um InGaP HBT Technology
- Good Linearity
- High Efficiency
- 10-pin Surface Mounting Package(4mmx4mmx1.3mm)
- 50ohm Input and Output Matching
- CDMA 95A/B, CDMA2000-1X/EVDO
Applications
- Digital Cel lular ( CDMA)
- Analog Cellular(AMPS)
Functional Block Diagram
Output
Match
Input
Match
Inter
Stage
Match
DA PA
Bias Circuit & Control Logic
RF Input
(4) RF Output
(8)
Vcc1(5) Vcc2(6)
Vref(1) Vcont(2)
MODULE
MMIC
Preliminary Information
WS1112
WM0501-12
3
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
ELECTRICAL SPECIFICATIONS(1)
Table 1. Absol ute Maximum Ratings
(1)
Parameter Symbol Minimum Nominal Maximum Unit
RF Input Power Pin - - 10 dBm
DC Supply Voltage Vcc -3.4 6.0 V
DC Reference Voltage Vref -2.85 3.3 V
Case Operating Temperature Tc -30 25 +110
o
C
Storage Temperature Tstg -55 -+125
o
C
Table 2. Recommended Operating Conditions
Parameter Symbol Minimum Nominal Maximum Unit
DC Supply Voltage Vcc 3.2 3.4 4.2 V
DC Reference Voltage Vref 2.75 2.85 2.95 V
Operating Frequency Fo 824 -849 MHz
Case Operating Temperature To -30 -85
o
C
Mode Control Voltage
- High Power Mode
- Low Power Mode Vcont
Vcont -
-0
2.85 -
-V
V
Table 3. Power Range Truth Table
Power Mode Symbol
High Power
(3)
PR2
Low Power
(3)
PR1
Shut Down
(4)
-
Vref Vcont
(2)
Range
2.85 Low 16dBm-28dBm
2.85 High < 16dBm
0 - -
(1)
No damage assuming only one parameter is set at limit at a time with all other parameters
set at or below nominal value.
(2)
High(2.0V – 3.0V), Low(0.0V – 0.5V)
(3)
To change between High Power Mode and Low Power Mode, switch Vcont accordingly
(4)
In order to shut down the module, turn off Vref accordingly
Preliminary Information
WS1112
WM0501-12
4
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
Table 4-1. Electrical Characteristics for CDMA Mo de (Vcc=3.4V, Vref=2.85V)
ELECTRICAL SPECIFICATIONS
mA104Pout=28dBmIrefReference Current
dBm/Hz
-133-135Pout=28dBmRxBNRx Band Noise Power
dBc-42-52
Pout=16dBm
ACPR1 low885KHz offset
Adjacent
Channel
Power 1
*1
dBc-54-62ACPR2 low1.98MHz offset
dBc-42-50
Pout=28dBm
ACPR1 high885KHz offsetAdjacent
Channel
Power 2
*1
dBc-54-60ACPR2 high1.98MHz offset
VSWR10:1No damageRuRuggedness
dBc-60VSWR 6:1SStability (Spurious Output)
2.5:12:1VSWRInput VSWR
dBc-40-553f0Third
dBc-30-352f0Second
Harmonic
Suppression
uA50.2
Vcc=3.4
Vref, Vcont=0
Ipd
Total Supply Current
in Power-down Mode
mA0.50.15Pout=16dBmIcontControl Current
mA105Pout=16dBmIrefReference Current
mA12090
High Power
Mode
Iq2Quiescent Current 2
mA2814
Low Power
Mode
Iq1Quiescent Current 1
mA500465Pout=28dBmIcc2Total Supply Current 2
mA8565Pout=16dBmIcc1Total Supply Current 1
%4038Pout=28dBmPAE2Power Added Efficiency 2
%1814Pout=16dBmPAE1Power Added Efficiency 1
dB2926Pout=28dBmG2Gain 2
dB2016Pout=16dBmG1Gain 1
UnitMaxTypMinConditionSymbol Characteristics
*1
Adjacent channel power is measured using IS-95 modulated input signal
Preliminary Information
WS1112
WM0501-12
5
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
Table 4-2. Electrical Characteristics for AMPS Mode (Vcc=3.4V, Vref=2.85V)
ELECTRICAL SPECIFICATIONS
dBm/Hz
-133-135Pout=28dBmRxBNRx Band Noise Power
VSWR10:1No damage
RuRuggedness
dBc-60VSWR 6:1
SStability (Spurious Output)
2.5:12:1
VSWRInput VSWR
dBc-40-55
3foThird
dBc-30-35
2foSecond
Harmonic Suppression
uA50.2
Vcc=3.4
Vref=0
Vcont=0
IpdTotal Supply Current
in Power-down Mode
mA---
IcontControl Current
mA104Pout=31dBm
IrefReference Current
mA12090
IqaQuiescent Current
mA740690Pout=31dBm
IccaTotal Supply Current
%5450Pout=31dBmPAEaPower Added Efficiency
dB2925Pout=31dBm
GaGain
UnitMaxTypMinConditionSymbol Characteristics
Preliminary Information
WS1112
WM0501-12
6
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
0
5
10
15
20
25
30
35
-4 0 4 8 121620242832
Pout (dBm)
Gain (dB)
0
50
100
150
200
250
300
350
400
450
500
550
-4 0 4 8 121620242832
Pout (dBm)
Icc (mA )
CHARACTERIZATION DATA
Figure 2. Gain vs. Output Power
Figure 1. Total Current vs. Output Power
Preliminary Information
WS1112
WM0501-12
7
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
-75
-70
-65
-60
-55
-50
-45
-40
-4 0 4 8 12 16 20 24 28 32
Po u t (dB m)
ACPR1 (dBc)
0
5
10
15
20
25
30
35
40
45
50
-4 0 4 8 12 16 20 24 28 32
Pout (dBm)
PAE (%)
CHARACTERIZATION DATA
Figure 4. Adjacent Channel Power 1 vs. Output Power
Figure 3. Power Added Efficiency vs. Output Power
Preliminary Information
WS1112
WM0501-12
8
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
-90
-85
-80
-75
-70
-65
-60
-55
-50
-4 0 4 8 12 16 20 24 28 32
Po ut (dB m)
ACPR2 (d Bc)
CHARACTERIZATION DATA
Figure 5. Adjacent Channel Power 2 vs. Output Power
Preliminary Information
WS1112
WM0501-12
9
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
Figure 1. Evaluation Board Schematic
EVALUATION BOARD DESCRIPTION
Figure 2. Evaluation Board Assembly Diagram
1 Vref
2 Vcont
3 GND
4 RF In
5 Vcc1
GND 10
GND 9
RF Out 8
GND 7
Vcc2 6
Vref
Vcont
RF In
Vcc1 Vcc2
RF Out
C2
2.2uF C1
100pF
C5
100pF
C6
100pF
C3
330pF C4
2.2uF
R1
10Kohm
C1 C3
C6 C5
R1
C2 C4
Preliminary Information
WS1112
WM0501-12
10
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
Figu re 1. Package Dim ensional Drawing and Pin Descriptio ns
PACKAGE DIMENSIONS AND PIN DESCRIPTIONS
all dimensions are in millimeters
5
2
3
4
10
6
9
8
7
X-RAY TOP VIEW
4 ± 0.1
4 ± 0.1
Pin 1 Mark
1.3 ± 0.1
0.48
SIDE VIEW
1.0 1.9
0.85
1.7
BOTTOM VIEW
0.4
0.6
0.4
0.5
PIN DESCRIPTIONS
Pin #
1
2
3
4
5
6
7
8
9
10
Name
Vref
Vcont
GND
RF In
Vcc1
Vcc2
GND
RF Out
GND
GND
Description
Reference Voltage
Control Voltage
Ground
RF Input
Supply Voltage
Supply Voltage
Ground
RF Output
Ground
Ground
0.85 0.3 0.5
Preliminary Information
WS1112
WM0501-12
11
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
Figure 2. Marking Specification
PACKAGE DIMENSIONS AND PIN DESCRIPTIONS
Pin 1 Mark
Manufacturing Part Number
Lot Number
FP Manufacturing Site
YY Manufacturing Year
WW Work Week (Package Sealed)
WAVICS
WS1112
FPYYWW
Preliminary Information
WS1112
WM0501-12
12
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
TAPE AND REEL INFORMATION
Figure 1. Tape and Reel Format – 4mm x 4mm
all dimensions are in millimeters
NOTES
1. Package Type : 4mm x 4mm
2. Tape Width : 12mm
3. Pocket Pitch : 8mm
4. Pocket Depth : 1.6mm
5. Reel Capacity : 2500ea
6. Max Reel Dia : 13”
Preliminary Information
WS1112
WM0501-12
13
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
TAPE AND REEL INFORMATION
Figure 2. Plastic Reel Format – 13”/4”
Detail of Pin Hole
12.4G
12Size Mark(XX)
12.00mmTape Width
+2.00
-0.00
all dimensions are in millimeters
Preliminary Information
WS1112
WM0501-12
14
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
HANDLING AND STOR AGE
1. ESD (Electrostatic Discharge)
Electrostatic discharge occurs naturally in the environment. With the increase in voltage potential,
the outlet of neutralization or discharge will be sought. If the acquired discharge route is through a
semiconductor device, destructive damage will result.
ESD countmeasure methods should be developed and used to control potential ESD damage
during handling in a factory environment at each manufacturing site.
NOTE : Module products should be considered extremely ESD sensitive
Table 1. ESD Classification
Pin #
1
2
3
4
5
6
7
8
9
10
Name
Vref
Vcont
GND
RF In
Vcc1
Vcc2
GND
RF Out
GND
GND
HBM
+/- 2000V
MM
+/- 200V
Classification
Class 2
Description
Reference Voltage
Control Voltage
Ground
RF Input
Supply Voltage
Supply Voltage
Ground
RF Output
Ground
Ground
Preliminary Information
WS1112
WM0501-12
15
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
2. MSL (Moisture Sensitivity Level)
Plastic encapsulated surface mount package is sensitive to damage induced by absorbed
moisture and temperature. WAVICS follows JEDEC Standard J-STD 020B. Each component
and package type is classified for moisture sensitivity by soaking a known dry package at various
temperatures and relative humidity, and times. After soak, the components are subjected to three
consecutive simulated reflows.
The out of bag exposure time maximum limits are determined by the classification test describe
above which corresponds to a MSL classification level 6 to 1 according to the JEDEC standard
IPC/JEDEC J-STD-020B and J-STD-033.
WS1112 is MSL3. Thus, according to the J-STD-033 p.11 the maximum Manufacturers
Exposure Time (MET) for this part is 168 hours. After this time period, the part would need to be
removed from the reel, de-taped and then re-bake.
Mandatory bake before use. After bake, must be reflowed within
the time limit specified on the label
6
24 hours5a
48 hours5
72 hours4
168 hours3
4 weeks2a
1 year2
Unlimited at =< 30
o
C/85% RH1
Floor Life (out of bag) at factory ambient =< 30
o
C/60% RH or as
stated
MSL Level
Table 2. Moisture Classification Level and Floor Life
NOTE: The MSL Level is marked on the MSL Label on each shipping bag.
MSL classification reflow temperature for the WS1112 is targeted at 260
o
C +0/-5
o
C. Figure 1 and
Table 3 show typical SMT profile for maximum temperature of 260
o
C.
HANDLING AND STOR AGE
Preliminary Information
WS1112
WM0501-12
16
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
Figure 1. Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5
o
C
Table 3. Typical SMT Reflow Profile for Maximum Temperature = 260 +0/-5
o
C
HANDLING AND STOR AGE
Profile Feature Sn-Pb Solder
Average ramp-up rate (T
L
to T
P
)3
o
C/sec m ax
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100
o
C
150
o
C
60-120 sec
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
-Time (T
L
)
183
o
C
60-150 sec
Peak temperature (Tp) 225 +0/-5
o
C
Time within 5
o
C of actual Peak Temperature (tp)
10-30 sec
Ramp-down Rate 6
o
C/sec m ax
Time 25
o
C to Peak Temperature
6 min max.
Pb-Free Solder
3
o
C/sec m ax
100
o
C
150
o
C
60-180 sec
3
o
C/sec m ax
217
o
C
60-150 sec
260 +0/-5
o
C
10-30 sec
6
o
C/sec m ax
8 min max.
Preliminary Information
WS1112
WM0501-12
17
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
3. Storage Conditions
Packages described in this document must be stored in sealed moisture barrier, anti-static bags.
Shelf life in a sealed moisture barrier bag is 12 months at <40
o
C and 90% relative humidity (RH)
J-STD-033 p.7.
3-1. Out-of-Bag Time Duration
After unpacking the device must be soldered to the PCB within 168 hours as listed in the
J-STD-020B p.11 with factory conditions <30
o
C and 60% RH.
3-2. Baking
It is not necessary to re-bake the part if both conditions( storage conditions and out-of-bag
condition ) have been satisfied. Baking must be done if at least one of the conditions above have
not been satisfied. The baking conditions are 125
o
C for 12 hours J-STD-033 p.8.
CAUTION: Tape and reel materials typically cannot be baked at the temperature described above.
If out-of-bag exposure time is exceeded, parts must be baked for a longer time at low
temperatures, or the parts must be re-reeled, de-taped, re-baked and then put back on tape and
reel. (See moisture sensitive warning label on each shipping bag for information of baking)
4. Board Rework
4-1. Component Removal, Rework and Remount
If a component is to be removed from the board, it is recommended that localized heating be used
and the maximum body temperatures of any surface mount component on the board not exceed
200°C. This method will minimize moisture related component damage. If any component
temperature exceeds 200°C, the board must be baked dry per 4-2 prior to rework and/or
component removal. Component temperatures shall be measured at the top center of the package
body. Any SMD packages that have not exceeded their floor life can be exposed to a maximum
body temperature as high as their specified maximum reflow temperature.
4-1-1. Removal for Failure Analysis
Not follow ing the requirements of 4-1 may cause moisture/reflow damage that could hinder or
completely prevent the determination of the original failure mechanism.
HANDLING AND STOR AGE
Preliminary Information
WS1112
WM0501-12
18
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
4-1-2. Baking of Populated Boards
Some SMD packages and board materials are not able to withstand long duration bakes at 125°C.
Examples of this are some FR-4 materials, which cannot withstand a 24 hr bake at 125°C.
Batteries and electrolytic capacitors are also Temperature sensitive. With component and board
temperature restrictions in mind, choose a bake temperature from Table 4-1 in J-STD 033; then
determine the appropriate bake duration based on the component to be removed. For additional
considerations see IPC-7711 and IPC-7721.
5. Derating due to Factory Environmental Conditions
Factory floor life exposures for SMD packages removed from the dry bags will be a function of the
ambient environmental conditions. A safe, yet conservative, handling approach is to expose the
SMD packages only up to the maximum time limits for each moisture sensitivity level as shown in
Table 2. This approach, however, does not work if the factory humidity or temperature are greater
than the testing conditions of 30°C/60% RH. A solution for addressing this problem is to derate the
exposure times based on the knowledge of moisture diffusion in the component packaging
materials (ref. JESD22-A120). Recommended equivalent total floor life exposures can be
estimated for a range of humidity’s and temperatures based on the nominal plastic thickness for
each device. Table 4 lists equivalent derated floor lives for humidity’s ranging from 20-90% RH for
three temperatures, 20°C, 25°C, and 30°C. This table is applicable to SMDs molded with novolac,
biphenyl or multifunctional epoxy mold compounds. The following assumptions were used in
calculating Table 4:
1. Activation Energy for diffusion = 0.35eV (smallest known value).
2. For ≤60% RH, use Diffusivity = 0.121exp (- 0.35eV/kT) mm2/s
(this uses smallest known Diffusivity @ 30°C).
3. For >60% RH, use Diffusivity = 1.320exp (- 0.35eV/kT) mm2/s
(this uses largest known Diffusivity @ 30°C).
HANDLING AND STOR AGE
Preliminary Information
WS1112
WM0501-12
19
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
HANDLING AND STOR AGE
Table 4. Recommended Equivalent Total Floor Li fe (days) @ 20°C, 25°C & 30°C
For ICs with No volac, Biphenyl and Multifu nctional Epoxies
(Reflow at same temperature at which the component was classified)
Preliminary Information
WS1112
WM0501-12
20
Power Amplifier Module for CDMA/AMPS(824-849MHz)
!"
GENERAL INFORMATION
WAVICS
5F Emerald Building, 1364-29
Seocho-dong, Seocho-ku,
Seoul, Korea
Tel : +82-2-3474-7733
Fax : +82-2-3474-6815
URL : http://www.wavics.com
Email : marketing@wavics.com
IMPORTANT NOTICE
WAVICS Co., Ltd. reserves the right to make changes to its products or to discontinue any
product at any time without notice. The product specifications contained in advanced product
information sheets and preliminary data sheets are assumed to be reliable; however, WAVICS
assumes no responsibilities for inaccuracies. WAVICS strongly urges customers to verify that
the information they are using is current before placing orders.
