VS-16CTQ...GPbF Series, VS-16CTQ...G-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 8 A FEATURES Base 2 common cathode * 175 C TJ operation * Low forward voltage drop * High frequency operation Anode TO-220AB Anode 2 1 Common 3 cathode * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package TO-220AB IF(AV) 2x8A * Designed and qualified according to JEDEC-JESD47 * Halogen-free according to IEC 61249-2-21 definition (-N3 only) VR 60 V, 80 V, 100 V VF at IF 0.58 V IRM max. 7 mA at 125 C DESCRIPTION TJ max. 175 C Diode variation Common cathode EAS 7.5 mJ This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS Rectangular waveform VRRM IFSM tp = 5 s sine VF 8 Apk, TJ = 125 C (per leg) TJ Range 16 A 100 V 650 A 0.58 V - 55 to 175 C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VSVSVSVSVSVSUNITS 16CTQ060GPbF 16CTQ060G-N3 16CTQ080GPbF 16CTQ080G-N3 16CTQ100GPbF 16CTQ100G-N3 VR 60 60 80 80 100 100 V VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS per leg VALUES UNITS 8 IF(AV) 50 % duty cycle at TC = 148 C, rectangular waveform per device A 16 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 C, IAS = 0.50 A, L = 60 mH 7.50 mJ Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A Revision: 11-Oct-11 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 650 A 210 Document Number: 94147 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ...GPbF Series, VS-16CTQ...G-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 8A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 C 16 A 8A TJ = 125 C 16 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 C VR = Rated VR TJ = 125 C TJ = TJ maximum VALUES UNITS 0.72 0.88 0.58 V 0.69 0.28 7.0 mA 0.415 V Forward slope resistance rt 11.07 m Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C 500 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8.0 nH Maximum voltage rate of change dV/dt 10 000 V/s VALUES UNITS - 55 to 175 C Rated VR Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC DC operation See fig. 4 3.25 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 Approximate weight Mounting torque C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) 16CTQ060G Marking device Case style TO-220AB 16CTQ080G 16CTQ100G Revision: 11-Oct-11 Document Number: 94147 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ...GPbF Series, VS-16CTQ...G-N3 Series Vishay Semiconductors 100 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 C TJ = 125 C TJ = 25 C 10 TJ = 175 C 10 TJ = 150 C TJ = 125 C 1 TJ = 100 C 0.1 TJ = 75 C 0.01 TJ = 50 C 0.001 TJ = 25 C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0001 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 0 20 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 11-Oct-11 Document Number: 94147 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ...GPbF Series, VS-16CTQ...G-N3 Series Vishay Semiconductors 180 7 170 6 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com DC 160 150 Square wave (D = 0.50) 80 % rated VR applied 140 130 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 5 4 RMS limit 3 DC 2 1 See note (1) 100 0 2 0 4 6 8 10 12 14 0 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V (1) Revision: 11-Oct-11 Document Number: 94147 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-16CTQ...GPbF Series, VS-16CTQ...G-N3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 16 C T Q 100 G PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (16 = 16 A) 3 - C = Common cathode 4 - T = TO-220 5 - Q = Schottky "Q" series 6 - Voltage rating 7 - G = Schottky generation 8 - Environmental digit 060 = 60 V 080 = 80 V PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-16CTQ060GPbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-16CTQ060G-N3 50 1000 Antistatic plastic tube VS-16CTQ080GPbF 50 1000 Antistatic plastic tube VS-16CTQ080G-N3 50 1000 Antistatic plastic tube VS-16CTQ100GPbF 50 1000 Antistatic plastic tube VS-16CTQ100G-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model Revision: 11-Oct-11 www.vishay.com/doc?95222 TO-220AB PbF TO-220AB -N3 www.vishay.com/doc?95225 www.vishay.com/doc?95028 www.vishay.com/doc?95279 Document Number: 94147 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 OP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 OP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90 to 93 INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90 to 93 NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000