MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB706F-40 Features * * 40 Volts Schottky Barrier Diode Low VF, Low IR High Reliability 1 3 2 SOT-323 A D Maximum Ratings Symbol VRM VR IO IFSM PD TJ TSTG Rating Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current Power Dissipation Junction Temperature Storage Temperature Rating 45 40 30 200 200 -55 to +150 -55 to +150 Unit V V mA mA mW B F C E H G J K DIMENSIONS O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Typ Max Units --- --- 0.37 Vdc --- --- 1 uAdc --- --- 5 pF OFF CHARACTERISTICS VF IR CD Forward Voltage (IF=1mAdc) Reverse Current (VR=10Vdc) Diode Capacitance (VR=1V, f=1MHz) DIM A B C D E F G H J K INCHES MIN MAX .071 .087 .045 .053 .079 .087 .026 Nominal .047 .055 .012 .016 .000 .004 .035 .039 .004 .010 .012 .016 MM MIN MAX 1.80 2.20 1.15 1.35 2.00 2.20 0.65Nominal 1.20 1.40 .30 .40 .000 .100 .90 1.00 .100 .250 .30 .40 NOTE Suggested Solder Pad Layout Note: Marking: 3J 0.70 0.90 1.90 0.65 0.65 Revision: 1 www.mccsemi.com 2005/01/27 MCC RB706F-40 TM 1000m 100 25 C 10m 1m Ta=75C Ta=25C 100 Ta=-25C 10 1 0 0.2 0.4 0.6 Ta=125C REVERSE CURRENT : IR (A) 100m Ta =1 FORWARD CURRENT : IF (A) Typ. pulse measurement 0.8 1.0 1.2 1.4 10 Ta=75C 1 Ta=25C 100n Ta=-25C 10n 1n 0 Typ. pulse measurement 5 10 15 20 25 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics 35 CAPACITANCE BETWEEN TERMINALS : CT (pF) Micro Commercial Components 100 f=1MHz Ta=25C 50 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics Io CURRENT (%) 100 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(C) Fig 4. Derating curve (mounting on glass epoxy PCBs) Revision: 1 www.mccsemi.com 2005/01/27