RB706F-40
40 Volts
Schottky Barrier Diode
Features
• Low VF, Low IR
• High Reliability
Maximum Ratings
Symbol
Rating Rating Unit
VRM Peak Reverse Voltage 45 V
VR DC Reverse Voltage 40 V
IO Mean Rectifying Current 30 mA
IFSM Peak Forward Surge Current 200 mA
PD Power Dissipation 200 mW
TJ Junction Temperature -55 to +150 ℃
TSTG Storage Temperature -55 to +150 ℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter Min Typ Max Units
OFF CHARACTERISTICS
VF Forward Voltage
(IF=1mAdc) --- --- 0.37 Vdc
IR Reverse Current
(VR=10Vdc) --- --- 1 uAdc
CD Diode Capacitance
(VR=1V, f=1MHz) --- --- 5 pF
Note: Marking: 3J
1 3
2
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 1 2005/01/27
SOT-323
Suggested Solder
Pad Layout
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .079 .087 2.00 2.20
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .012 .016 .30 .40
A
C
B
D
E
F
G
H
J
1.90
0.70
0.65
0.65
DIMENSIONS
K
TM
Micro Commercial Components
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1m
10m
100m
pulse measurement
1µ
10µ
100µ
1000m
Typ.
FORWARD CURRENT : I
F (
A)
FORWARD VOLTAGE : V
F (
V)
Fig. 1 Forward characteristics
Ta=75°C
Ta=25°C
Ta=−25°C
Ta=125°C
0
5 101520253035
100n
10n
1n
pulse measurement
Typ.
100µ
10µ
1µ
REVERSE CURRENT : I
R (
A)
REVERSE VOLTAGE : V
R (
V)
Fig. 2 Reverse characteristics
Ta=75°C
Ta=25°C
Ta=125°C
Ta=−25°C
02 4 6 8 10 12 14
1
2
5
10
20
50
100 f=1MHz
Ta=25
°C
REVERSE VOLTAGE : VR
(
V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
0
0
20
40
60
80
100
25 50 75 100 125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta(°C)
Fig 4. Derating curve
(mounting on glass epoxy PCBs)
RB706F-40 MCC
www.mccsemi.com
Revision: 1 2005/01/27
TM
Micro Commercial Components