DATA SH EET
Product data sheet 2001 Feb 27
DISCRETE SEMICONDUCTORS
BAT854W series
Schottky barrier (double) diodes
k, h
alfpage
M3D102
2001 Feb 27 2
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes BAT854W series
FEATURES
•Very low forward voltage
•Very low reverse current
•Guard ring protected
•Very small SMD plastic package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes
•Low power cons umption
applications (e.g. hand-held
applications).
DESCRIPTION
Planar Schottky barrier diode s
encapsulated in a SOT323 very small
SMD plastic packag e. Sing le diod es
and double diodes with different
pinning are availabl e.
MARKING
PINNING
TYPE NUMBER MARKING
CODE
BAT854W 81
BAT854AW 82
BAT854CW 83
BAT854SW 84
PIN SYMBOL
BAT854W
1 a
2n.c.
3 k
BAT854AW
1 k1
2 k2
3 a1,a2
BAT854CW
1 a1
2 a2
3 k1, k2
BAT854SW
1 a1
2 k2
3 k1, a2
handbook, 2 columns 3
12
MBC870
Top view
Fig.1 Simplified outline
SOT323 and pin
configuration.
3
1
2
n.
c.
MLC357
Fig.2 BAT854W single diode
configuration (sym bol).
3
12
MLC36
0
Fig.3 BAT854AW diode
configuration (sym bol).
3
12
MLC35
9
Fig.4 BAT854CW diode
configuration (sym bol).
3
12
MLC35
8
Fig.5 BAT854SW diode
configuration (sym bol).
2001 Feb 27 3
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT854W series
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C; unless otherwise specified.
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTE RISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous revers e voltage −40 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −300 mA
IFSM non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method −1 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFcontinuous forward v oltage see Fig.6
IF = 0.1 mA 200 −mV
IF = 1 mA 260 −mV
IF = 10 mA 340 −mV
IF = 30 mA −420 mV
IF = 100 mA −550 mV
IRcontinuous rev ers e current VR = 25 V; note 1; see Fig.7 −0.5 μA
Cddiode capacit an c e VR = 1 V; f = 1 MHz; see Fig.8 −20 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
2001 Feb 27 4
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT854W series
GRAPHICAL DATA
handbook, halfpage
1.20.80.40
(1) (3)
VF (V)
IF
(mA)
103
102
10
1
10−1
MLD546
(2)
Fig.6 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
4020100 VR (V)
IR
(μA)
30
103
102
10
1
10−1
MLD547
(1)
(2)
(3)
Fig.7 Reverse current as a fun ction of reverse
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0VR (V)
Cd
(pF)
10 20 40
20
0
16
30
12
8
4
MLD548
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
2001 Feb 27 5
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT854W series
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
2001 Feb 27 6
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes BAT854W series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Applications ⎯ Applications that are described herein for
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Customer notification
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Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Feb 27 Docum ent order number: 9397 750 07935
