SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . .12 4 6, SEMiX(R) 3 Trench IGBT Modules SEMiX 253GB176HD Preliminary Data Features ! Typical Applications " # $% # Remarks ! # & '((( # & ')(( )*+, )* 0( + ' 7%1".78 9 # Values Units '-(( )*( '0( 3(( 5 )( : ;( <<< = '*( ')* " " + ;((( );( '-( 3(( " " '*(( " ", ' < Inverse diode .> .>12 )* 0( + ' .> '( ? > > 1E=E :, )* ')* + (,- ' B # F # F ')(( , . 4 5 '* 14 14 A,) B, 6 ')* + '*( " 'A( F ;* 03( F '3( A* ** G Inverse diode > 7 .112 H .> '*( "? 4 ( ? 6 )* ')* +, 6 )* ')* + 6 )* ')* + .> '*( "? 6 )* ')* + #F# 3;(( "FI 4 :'* ',- ',- ',A ',A ',' (,A ; *,3 )3( *0 ',3 ',' ; *,3 B " I 3* G Thermal characteristics 16: 16:M 16:>M .4J . >LM 1: # (,') (,'- M# KFL KFL KFL (,(; KFL * 5*N OP 3;)( K Temperature sensor 1)* )* + J)*F0* 1)1' QRJ'F):'F'S ? RKS?J Mechanical data 2 F2 O 2* F 2@ 3F),* * F* )0A 8 GB 1 01-03-2006 GES (c) by SEMIKRON SEMiX 253GB176HD Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 01-03-2006 GES (c) by SEMIKRON SEMiX 253GB176HD Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward charact., incl. RCC+EE Fig. 12 Typ. CAL diode peak reverse recovery current 3 01-03-2006 GES (c) by SEMIKRON SEMiX 253GB176HD Fig. 13 Typ. CAL diode recovered charge 4J 2T 3 2T 3 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 01-03-2006 GES (c) by SEMIKRON