TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 D D D D D D Low rDS(on) . . . 5 Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability Output Clamp Voltage . . . 50 V Low Power Consumption DW OR N PACKAGE (TOP VIEW) CLR D1 D2 DRAIN1 DRAIN2 DRAIN3 DRAIN4 D3 D4 GND description The TPIC6B273 is a monolithic, high-voltage, medium-current, power logic octal D-type latch with DMOS-transistor outputs designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other medium-current or high-voltage loads. The TPIC6B273 contains eight positive-edgetriggered D-type flip-flops with a direct clear input. Each flip-flop features an open-drain power DMOS-transistor output. Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sink-current capability. Each output provides a 500-mA typical current limit at TC = 25C. The current limit decreases as the junction temperature increases for additional device protection. 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC D8 D7 DRAIN8 DRAIN7 DRAIN6 DRAIN5 D6 D5 CLK logic symbol CLR CLK D1 D2 D3 D4 When clear (CLR) is high, information at the D inputs meeting the setup time requirements is transferred to the DRAIN outputs on the positivegoing edge of the clock (CLK) pulse. Clock triggering occurs at a particular voltage level and is not directly related to the transition time of the positive-going pulse. When the clock input (CLK) is at either the high or low level, the D input signal has no effect at the output. An asynchronous CLR is provided to turn all eight DMOS-transistor outputs off. When data is low for a given output, the DMOS-transistor output is off. When data is high, the DMOS-transistor output has sink-current capability. 1 D5 D6 D7 D8 1 R 11 C1 2 4 1D 3 5 8 6 9 7 12 14 13 15 18 16 19 17 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 DRAIN7 DRAIN8 This symbol is in accordance with ANSI/IEEE Standard 91-1984 and IEC Publication 617-12. FUNCTION TABLE (each channel) INPUTS CLR CLK D OUTPUT DRAIN L H H H X L X H L X H L H Latched H = high level, L = low level, X = irrelevant The TPIC6B273 is characterized for operation over the operating case temperature range of - 40C to 125C. Copyright 1997, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 logic diagram (positive logic) 4 CLR D1 CLK 1 2 11 DRAIN1 CLR 1D C1 5 DRAIN2 CLR D2 3 1D C1 6 DRAIN3 CLR D3 8 1D C1 7 DRAIN4 CLR D4 9 1D C1 14 DRAIN5 CLR D5 12 1D C1 15 DRAIN6 CLR D6 13 1D C1 16 DRAIN7 CLR D7 18 1D C1 17 DRAIN8 CLR D8 19 1D 10 C1 2 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 GND TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 schematic of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC DRAIN 50 V Input 25 V 20 V 12 V GND GND absolute maximum ratings over recommended operating case temperature range (unless otherwise noted) Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Pulsed drain current, each output, all outputs on, ID, TC = 25C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA Continuous drain current, each output, all outputs on, ID, TC = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA Peak drain current single output, IDM,TC = 25C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 150C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40C to 125C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration 100 s and duty cycle 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25C, L = 200 mH, IAS = 0.5 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE TC 25C POWER RATING DW N DERATING FACTOR ABOVE TC = 25C TC = 125C POWER RATING 1389 mW 11.1 mW/C 278 mW 1050 mW 10.5 mW/C 263 mW POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 recommended operating conditions Logic supply voltage, VCC High-level input voltage, VIH MIN MAX 4.5 5.5 UNIT V 0.85 VCC Low-level input voltage, VIL Pulsed drain output current, TC = 25C, VCC = 5 V (see Notes 3 and 5) V 0.15 VCC V 500 mA - 500 Setup time, D high before CLK, tsu (see Figure 2) 20 ns Hold time, D high after CLK, th (see Figure 2) 20 ns Pulse duration, tw (see Figure 2) 40 Operating case temperature, TC - 40 ns C 125 electrical characteristics, VCC = 5 V, TC = 25C (unless otherwise noted) PARAMETER TEST CONDITIONS V(BR)DSX Drain-to-source breakdown voltage ID = 1 mA VSD Source-to-drain diode forward voltage IF = 100 mA MIN TYP MAX 50 V 0.85 IIH IIL High-level input current Low-level input current VCC = 5.5 V, VCC = 5.5 V, ICC Logic supply current 5V VCC = 5 5.5 IN Nominal current VDS(on) = 0.5 V, IN = ID, See Notes 5, 6, and 7 VI = VCC VI = 0 IDSX Off state drain current Off-state VDS = 40 V, VDS = 40 V, VCC = 5.5 V VCC = 5.5 V, rDS(on) Static drain-to-source on-state resistance ID = 100 mA, ID = 100 mA, TC = 125C VCC = 4.5 V VCC = 4.5 V, ID = 350 mA, VCC = 4.5 V 1 V 1 A -1 A All outputs off 20 100 All outputs on 150 300 TC = 85C, 90 TC = 125C See Notes 5 and 6 and Figures 6 and 7 UNIT A mA 0.1 5 0.15 8 4.2 5.7 6.8 9.5 5.5 8 TYP MAX A switching characteristics, VCC = 5 V, TC = 25C PARAMETER TEST CONDITIONS MIN UNIT tPLH tPHL Propagation delay time, low-to-high-level output from CLK 150 ns Propagation delay time, high-to-low-level output from CLK 90 ns tr tf Rise time, drain output 200 ns 200 ns ta trr Reverse-recovery-current rise time Fall time, drain output Reverse-recovery time NOTES: 3. 5. 6. 7. 4 CL = 30 pF,, ID = 100 mA,, See Figures 1, 2, and 8 IF = 100 mA, di/dt = 20 A/s, See Notes 5 and 6 and Figure 3 100 300 ns Pulse duration 100 s and duty cycle 2%. Technique should limit TJ - TC to 10C maximum. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85C. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 thermal resistance PARAMETER RJA TEST CONDITIONS DW package resistance junction-to-ambient junction to ambient Thermal resistance, MIN MAX 90 All 8 outputs with equal power N package 95 UNIT C/W PARAMETER MEASUREMENT INFORMATION 24 V 5V 20 VCC 11 Word Generator (see Note A) 5V ID CLK 0V 235 DUT CLK DRAIN 4 -7, 14 -17 5V D Output 0V D 1 5V CL = 30 pF (see Note B) CLR CLR 0V GND 24 V 10 Output 0.5 V TEST CIRCUIT VOLTAGE WAVEFORMS Figure 1. Resistive-Load Test Circuit and Voltage Waveforms 5V D 5V VCC Word Generator (see Note A) Word Generator (see Note A) CLK 24 V 1 20 0V 5V 50% 0V CLR tPLH ID D 11 CLK 235 DUT DRAIN GND 50% Output 4 -7, 14 -17 Output tPHL 90% 24 V 90% 10% 10% tr 0.5 V tf SWITCHING TIMES CL = 30 pF (see Note B) 10 5V 50% CLK 0V tsu TEST CIRCUIT D th 5V 50% 50% 0V tw INPUT SETUP AND HOLD WAVEFORMS Figure 2. Test Circuit, Switching Times, and Voltage Waveforms NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 KHz, ZO = 50 . B. CL includes probe and jig capacitance. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 PARAMETER MEASUREMENT INFORMATION TP K DRAIN 0.1 A 2500 F 250 V Circuit Under Test di/dt = 20 A/s + 25 V L = 1 mH IF (see Note A) IF - 0 TP A 25% of IRM t2 t1 t3 Driver IRM RG VGG (see Note B) ta 50 trr CURRENT WAVEFORM TEST CIRCUIT NOTES: A. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point. B. The VGG amplitude and RG are adjusted for di/dt = 20 A/s. A VGG double-pulse train is used to set IF = 0.1 A, where t1 = 10 s, t2 = 7 s, and t3 = 3 s. Figure 3. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode 5V 15 V tw 20 1 Word Generator (see Note A) 11 VCC 10.5 CLR CLK 5V Input See Note B ID 200 mH DUT DRAIN D 4 -7, 14 -17 GND ID VDS V(BR)DSX = 50 V MIN VOLTAGE AND CURRENT WAVEFORMS TEST CIRCUIT NOTES: A. The word generator has the following characteristics: tr 10 ns, tf 10 ns, ZO = 50 . B. Input pulse duration, tw, is increased until peak current IAS = 0.5 A. Energy test is defined as EAS = IAS x V(BR)DSX x tav/2 = 30 mJ. Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms 6 0V IAS = 0.5 A VDS 10 tav POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 TYPICAL CHARACTERISTICS PEAK AVALANCHE CURRENT vs TIME DURATION OF AVALANCHE DRAIN-TO-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT r DS(on) -Drain-to-Source On-State Resistance - 10 IAS - Peak Avalanche Current - A TC = 25C 4 2 1 0.4 0.2 0.1 0.1 0.2 0.4 1 2 4 18 VCC = 5 V See Note A 16 14 TC = 125C 12 10 8 6 TC = 25C 4 TC = - 40C 2 0 0 10 100 tav - Time Duration of Avalanche - ms 200 300 400 500 ID - Drain Current - mA 600 700 0 25 50 75 100 TC - Case Temperature - C 125 Figure 5 Figure 6 8 SWITCHING TIME vs CASE TEMPERATURE 300 ID = 100 mA See Note A 7 ID = 100 mA See Note A tf TC = 125C 250 6 Switching Time - ns r DS(on) - Static Drain-to-Source On-State Resistance - STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs LOGIC SUPPLY VOLTAGE 5 TC = 25C 4 3 TC = - 40C 2 tr 200 tPLH 150 tPHL 100 1 0 4 4.5 5 5.5 6 6.5 7 50 - 50 - 25 VCC - Logic Supply Voltage - V Figure 7 Figure 8 NOTE C: Technique should limit TJ - TC to 10C maximum. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 7 TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH SLIS031 - APRIL 1994 - REVISED JULY 1995 THERMAL INFORMATION MAXIMUM PEAK DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY I D - Maximum Continuous Drain Current of Each Output - A 0.45 VCC = 5 V 0.4 0.35 0.3 0.25 TC = 25C 0.2 0.15 TC = 100C 0.1 TC = 125C 0.05 0 1 2 3 4 5 6 7 8 N - Number of Outputs Conducting Simultaneously I D - Maximum Peak Drain Current of Each Output - A MAXIMUM CONTINUOUS DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY 0.5 d = 10% 0.45 d = 20% 0.4 0.35 d = 50% 0.3 0.25 d = 80% 0.2 0.15 VCC = 5 V TC = 25C d = tw/tperiod = 1 ms/tperiod 0.1 0.05 0 1 Figure 9 8 2 3 4 5 Figure 10 POST OFFICE BOX 655303 6 7 8 N - Number of Outputs Conducting Simultaneously * DALLAS, TEXAS 75265 PACKAGE OPTION ADDENDUM www.ti.com 23-Apr-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp TPIC6B273DW ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPIC6B273DWG4 ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPIC6B273DWR ACTIVE SOIC DW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPIC6B273DWRG4 ACTIVE SOIC DW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPIC6B273N ACTIVE PDIP N 20 20 Pb-Free (RoHS) (3) Samples (Requires Login) CU NIPDAU N / A for Pkg Type (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device TPIC6B273DWR Package Package Pins Type Drawing SOIC DW 20 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2000 330.0 24.4 Pack Materials-Page 1 10.8 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 13.1 2.65 12.0 24.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPIC6B273DWR SOIC DW 20 2000 367.0 367.0 45.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as "components") are sold subject to TI's terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI's terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers' products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers' products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI's goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or "enhanced plastic" are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components which meet ISO/TS16949 requirements, mainly for automotive use. Components which have not been so designated are neither designed nor intended for automotive use; and TI will not be responsible for any failure of such components to meet such requirements. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP(R) Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Mobile Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright (c) 2012, Texas Instruments Incorporated