RS1MDFQ Green 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER ADVANCED PRODUCT NEWINFORMATION Product Summary (@TA = +25C) Features and Benefits VRRM (V) IO (A) VF Max (V) IR Max (A) 1,000 1 1.3 5 Glass Passivated Die Construction Fast Recovery Time for High Efficiency Surge Overload Rating to 30A Peak High Current Capability Low Profile Design, Package Height Less than 1.1mm Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data The RS1MDFQ is a rectifier packaged in the low profile D-FLAT package. Providing fast recovery time for high efficiency, this device is ideal for use in general applications such as: Reverse Protection Switching Blocking Case: D-FLAT Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.035 grams (Approximate) D-FLAT Top View Ordering Information (Note 5) Part Number RS1MDFQ-13 Notes: Compliance Automotive Case D-FLAT Packaging 10,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D-FLAT R1M = Product Type Marking Code = Manufacturers' Code Marking YWW = Date Code Marking Y = Last Digit of Year (ex: 6 for 2016) WW = Week Code (01 to 53) AB = Foundry and Assembly Code RS1MDFQ Document number: DS38756 Rev. 2 - 2 1 of 5 www.diodes.com May 2016 (c) Diodes Incorporated RS1MDFQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage (Note 6) RMS Reverse Voltage Value Unit VRRM VRWM VR 1,000 V VR(RMS) 700 V IO 1.0 A IFSM 30 A @ TA = +100C Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) RJT 31 C/W Typical Thermal Resistance, Junction to Air (Note 7) RJA 83 C/W TJ, TSTG -55 to +150 C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Reverse Breakdown Voltage (Note 8) Symbol Min Typ V(BR)R 1,000 Max Unit Test Condition -- -- V IR = 10A 1.3 -- V IF = 1A, TJ = +25C IF = 1A, TJ = +125C Forward Voltage Drop VF -- 0.95 0.83 Leakage Current (Note 8) IR -- 0.2 5 5 -- A VR = 1,000V, TJ = +25C VR = 1,000V, TJ = +125C Reverse Recovery Time tRR -- 140 500 ns IF = 0.5A, IR = 1.0A, IRR = 0.25A Total Capacitance CT -- 5 -- pF VR = 4.0VDC, f = 1MHz Notes: 6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pads. 7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pads. 8. Short duration pulse test used to minimize self-heating effect. 2 100 I F, INSTANTANEOUS FORWARD CURRENT (A) IF , DC FORWARD CURRENT (A) ADVANCED PRODUCT NEWINFORMATION Average Rectified Output Current Symbol 1.8 1.6 1.4 1.2 Note 7 1 0.8 0.6 0.4 Note 6 0.2 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE ( C) Figure 1 DC Forward Current Derating RS1MDFQ Document number: DS38756 Rev. 2 - 2 150 10 TA = 85C 1 T A = 100C T A = 25C TA = 125C TA = 150C T A = -55C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 V F, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2 Typical InstantanousForward Voltage 2 of 5 www.diodes.com May 2016 (c) Diodes Incorporated RS1MDFQ IFSM, PEAK FORWARD SURGE CURRENT (A) IR, REVERSE LEAKAGE CURRENT (A) 30 TA = 150C 10 T A = 125C T A = 100C 1 T A = 85C 0.1 T A = 25C 0.01 TA = -55C 0.001 0.0001 0 100 200 300 400 500 600 700 800 900 1000 1100 VR , INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3 Typical Instantaneous Reverse Characteristics 50 PF(AV), AVERAGE FORWARD POWER DISSI PATION (W) 40 30 20 10 0 0.1 Single Half-Sine-Wave 20 T J = 150C 10 0 1 10 100 NUMBER OF CYCLES AT 60Hz Figure Fig. 44 Forward Surge Current Derating Curve 1.8 f = 1MHz CT, TOTAL CAPACITANCE (pF) ADVANCED PRODUCT NEWINFORMATION 100 1.6 T j = 150C 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 10 100 VR, DC REVERSE VOLTAGE (V) Figure 5 Total Capacitance vs. Reverse Voltage 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6 Forward Power Dissipation trrRR 2 +0.5A Device Under Test (-) 0A (+) Pulse Generator (Note10) 9) (Note 50V DC Approx (-) Oscilloscope (Note 8) -0.25A (+) (Note 9) -1.0A Set time base for 50/100 ns/cm Figure 7 Reverse Recovery Time Characteristic and Test Circuit Notes: 9. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF. 10. Rise Time = 10ns max. Input Impedance = 50. RS1MDFQ Document number: DS38756 Rev. 2 - 2 3 of 5 www.diodes.com May 2016 (c) Diodes Incorporated RS1MDFQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. D-FLAT HE E L k D-FLAT Dim Min Max A 0.90 1.10 b 1.25 1.65 c 0.10 0.40 D 2.25 2.95 E 3.95 4.60 k 2.80 5.00 5.60 HE L 0.50 1.30 All Dimensions in mm ADVANCED PRODUCT NEWINFORMATION b D A c Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. D-FLAT X1 X Dimensions C G X X1 Y Y G Value (in mm) 4.65 2.80 1.85 6.50 1.70 C RS1MDFQ Document number: DS38756 Rev. 2 - 2 4 of 5 www.diodes.com May 2016 (c) Diodes Incorporated RS1MDFQ IMPORTANT NOTICE ADVANCED PRODUCT NEWINFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2016, Diodes Incorporated www.diodes.com RS1MDFQ Document number: DS38756 Rev. 2 - 2 5 of 5 www.diodes.com May 2016 (c) Diodes Incorporated