RS1MDFQ
Document number: DS38756 Rev. 2 - 2
1 of 5
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May 2016
© Diodes Incorporated
ADVANCED I NF ORMATION
NEW PRODUCT
RS1MDFQ
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
Product Summary (@TA = +25°C)
VRRM (V)
IO (A)
VF Max (V)
1,000
1
1.3
Description and Applications
The RS1MDFQ is a rectifier packaged in the low profile D-FLAT
package. Providing fast recovery time for high efficiency, this device
is ideal for use in general applications such as:
Reverse Protection
Switching
Blocking
Features and Benefits
Glass Passivated Die Construction
Fast Recovery Time for High Efficiency
Surge Overload Rating to 30A Peak
High Current Capability
Low Profile Design, Package Height Less than 1.1mm
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: D-FLAT
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.035 grams (Approximate)
Ordering Information (Note 5)
Part Number
Compliance
Case
Packaging
RS1MDFQ-13
Automotive
D-FLAT
10,000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Green
Top View
D-FLAT
R1M = Product Type Marking Code
= Manufacturers’ Code Marking
YWW = Date Code Marking
Y = Last Digit of Year (ex: 6 for 2016)
WW = Week Code (01 to 53)
AB = Foundry and Assembly Code
D-FLAT
RS1MDFQ
Document number: DS38756 Rev. 2 - 2
2 of 5
www.diodes.com
May 2016
© Diodes Incorporated
ADVANCED I NF ORMATION
NEW PRODUCT
RS1MDFQ
Notes:
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 6)
VRRM
VRWM
VR
1,000
V
RMS Reverse Voltage
VR(RMS)
700
V
Average Rectified Output Current @ TA = +100°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
30
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance, Junction to Terminal (Note 7)
RθJT
31
°C/W
Typical Thermal Resistance, Junction to Air (Note 7)
RθJA
83
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pads.
7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pads.
8. Short duration pulse test used to minimize self-heating effect.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
25 50 75 100 125 150
I , DC FORWARD CURRENT (A)
F
T , AMBIENT TEMPERATURE ( C)
A°
Figure 1 DC Forward Current Derating
Note 6
Note 7
0.01
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
A
T = 85°C
A
T = 12C
A
T = 15C
A
T = 10C
A
T = -55°C
A
I , INSTANTANEOUS FORWARD CURRENT (A)
F
Figure 2 Typical InstantanousForward Voltage
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 8)
V(BR)R
1,000
V
IR = 10µA
Forward Voltage Drop
VF
0.95
0.83
1.3
V
IF = 1A, TJ = +25°C
IF = 1A, TJ = +125°C
Leakage Current (Note 8)
IR
0.2
5
5
µA
VR = 1,000V, TJ = +25°C
VR = 1,000V, TJ = +125°C
Reverse Recovery Time
tRR
140
500
ns
IF = 0.5A, IR = 1.0A, IRR =
0.25A
Total Capacitance
CT
5
pF
VR = 4.0VDC, f = 1MHz
RS1MDFQ
Document number: DS38756 Rev. 2 - 2
3 of 5
www.diodes.com
May 2016
© Diodes Incorporated
ADVANCED I NF ORMATION
NEW PRODUCT
RS1MDFQ
Notes: 9. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
10. Rise Time = 10ns max. Input Impedance = 50Ω.
0.0001
0.001
0.01
0.1
1
10
100
0100 200 300 400 500 600 700 800 900 1000 1100
T = 25°C
A
T = 85°C
A
T = 12C
A
T = 15C
A
T = 12C
A
T = 10C
A
T = -55°C
A
I , REVERSE LEAKAGE CURRENTA)
R
Figure 3 Typical Instantaneous Reverse Characteristics
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
0
10
20
30
110 100
NUMBER OF CYCLES AT 60Hz
Fig. 4 Forward Surge Current Derating Curve
T = 150°C
J
Single Half-Sine-Wave
I , PEAK FORWARD SURGE CURRENT (A)
FSM
0
10
20
30
40
50
0.1 1 10 100
C , TOTAL CAPACITANCE (pF)
T
Figure 5 Total Capacitance vs. Reverse Voltage
V , DC REVERSE VOLTAGE (V)
R
f = 1MHz
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0 0.5 1 1.5 2
PF , AVERAGE FORWARD POWER
(AV) DISSIPATION (W)
Figure 6 Forward Power Dissipation
IF , AVERAGE FORWARD CURRENT (A)
(AV)
T = 150°C
j
50V DC
Approx
Oscilloscope
(Note 8)
Pulse
Generator
(Note 9)
Device
Under
Test
trr
Set time base for 50/100 ns/cm
+0.5A
0A
-0.25A
-1.0A
Figure 7 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+) (-)
(-)
(Note 9)
(Note 10)
Figure 4
tRR
RS1MDFQ
Document number: DS38756 Rev. 2 - 2
4 of 5
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May 2016
© Diodes Incorporated
ADVANCED I NF ORMATION
NEW PRODUCT
RS1MDFQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
D-FLAT
D-FLAT
Dim
Min
Max
A
0.90
1.10
b
1.25
1.65
c
0.10
0.40
D
2.25
2.95
E
3.95
4.60
k
2.80
-
HE
5.00
5.60
L
0.50
1.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
4.65
G
2.80
X
1.85
X1
6.50
Y
1.70
H
D
E
L
b
A
c
Ek
X
G
C
X1
Y
RS1MDFQ
Document number: DS38756 Rev. 2 - 2
5 of 5
www.diodes.com
May 2016
© Diodes Incorporated
ADVANCED I NF ORMATION
NEW PRODUCT
RS1MDFQ
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