Radiation sensitive devices Dispositifs sensibles aux radiations - Strahlungsempfindliche Elemente [E P | DESCRIPTION RATINGS AND CHARACTERISTICS (at Tamb = 25C, unlese otherwise stated) TYPE SUBTYPES NUMBER ye + : (2) min Additional information Symboi| Value |Unity | typ MEASURING CONDITIONS max BPX44 | PHOTO-TRANSISTOR FOR DETECTION OF VISIBLE VcEO 30 Vv s| max AND INFRA-RED LIGHT I 300 mA ma x| Outlines : 110Aj with lene on top Prot | 400 mW | max Toper| 125 c | max I 1,5 mA |[typfat Vor = 5 V5 E= 1 nW/em? ICER 100 nA f{max}at Vcg = 20V; E=0 MBRICE 30 V |[minjat Ic = 10 vA; E= 0 hye 50 typpat Ic = | mA 3 VoR = 5 V BPX45 | PHOTO-TRANSISTOR + NPN TRANSISTOR IN VoEo 25 v max} DARLINGTON CIRCUIT Ic 300 mA max Outlines : 110Aj, with Lens on top Ptot | 400 mW {| max Toper} 125 C max ICER 1 yA {max at VcE = 20V; E=0 V(BR)CE| 25 V jminj at Ic = 10 pA 3 E= 0 hg | 5000 typ)at Ic = 1 A; Vop=5V VcEsat| 2 v | maxjat Ic = 50 mA 3 Ip = 0,5 mA CcE 55 pF typ) at Veg = 20 V BPX46 | PN PHOTOVOLTAIC SOLAR CELL OF 12,5 em? Vn 470 mV at E = 100 mW/cm2 Circular cell : active area : 40 mm In 260 mA at E = 100 mW/cn? thickness : 0,25 mm Apk 0,85) um BPX47 | SOLAR BATTERY OF 64 PN CELLS OF 12,6 em? Tg 295 mA min} (All characteristics at E = 100 mW/cm*) Im 257 mA Pn 7,7 mW Vo 38 Vv jmin BPX47A|Terrestrial solar module for direct T -40 c min eonverstons of solar energy into St | 485 c max electrical ener, 2 34 series-connected solar cells of Pyopt M W typjat EL = 1 kW/m 57 mm dtameter Vopt 15,5 Vv typ fat EB, = 1 kW/m I 700 mA typjat Eo = 1 it/m? opt c 2 Vv 20,5 v typlat E| = 1 kW/m oc c 2 Igo 720 mA typjat E. = kW/m 1 " BPX48 | UNENCAPSULATED DIFFERENTIAL PHOTO-DIODE VR 19 Vv {max s 15 nA/1x [min Apk 0,85 ym [typ fo 1 MHz [typ] at Rp = 1 k2 5 Vp = 10 V Cj 30 pF |typ] at Vp = 0 A 1,9 mn |typ E with colour temperature of 2850 K 1 100 nA jtyp{at Ve = 10V;E=0 BPX49 |MONOLITHIC INTEGRATED UIRCUIT OF 26 NPN VcEo 6 v_ | max PHOTO-TRANSISTORS WITH DOUBLE EMITTER, I 40 mA | max EACH PHOTO-TRANSISTOR IS CONNECTED WITH Toper 125 c max| without optical fiber A NORMAL INTEGRATED NPN TRANSISTOR. 75 c max|with optical fiber Metal/ceramte package V(BR) 6 V |minfat I = 10 vA; E=0O IcER 1 nA ftyplat Ven =5 V3; E=0 Ss 15 uA/mW/|typ|at Ic = 200 yA ; T = 3000 K cm BPX50 |AS BPX49, BUT 10 PHOTO-TRANSISTORS INSTEAD OF 26 BPX51 |MONOLITHIC INTEGRATED CIRCUIT OF 100 tq 0,25 us typ|at Icg = 100 pA PHOTO-TRANSISTORS tr 1,2 us typ}at Ice = 100 uA For other data see BPX49 te 0,1 us typfat Ice = 100 yA (1) FWHM : Full width, half maximum of pulse (2) if applicable (a