Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS |Copyright © Harris Corporation 1998
BUZ21
19A, 100V, 0.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9854.
Features
• 19A, 100V
•r
DS(ON) = 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ21 TO-220AB BUZ21
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
October 1998 File Number 2420.1
[ /Title
(BUZ21)
/
Subject
(19A,
100V,
0.100
Ohm, N-
Channel
Power
MOS-
FET)
/
Author
()
/
Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET,
TO-
220AB)
/
Creator
()
/
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FO pdf-
mark
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pdfmark
Data Sheet
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ21 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 100 V
Continuous Drain Current, TC = 55oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID19 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 75 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD75 W
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 230 mJ
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V
Zero Gate Voltage Drain Current IDSS TJ = 25oC, VDS = 100V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 100V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 9A, VGS = 10V (Figure 8) - 0.09 0.1 Ω
Forward Transconductance (Note 2) gfs VDS = 25V, ID = 9A (Figure 11) 4 8 - S
Turn-On Delay Time td(ON) VCC = 30V, ID≈3A, VGS = 10V, RGS =50Ω, RL
= 10Ω. (Figures 16, 17) -3045 ns
Rise Time tr-5075 ns
Turn-Off Delay Time td(OFF) - 170 220 ns
Fall Time tf- 80 110 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 1500 2000 pF
Output Capacitance COSS - 450 700 pF
Reverse Transfer Capacitance CRSS - 150 240 pF
Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W
Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD TC = 25oC--19A
Pulsed Source to Drain Current ISDM TC = 25oC--75A
Source to Drain Diode Voltage VSD TJ = 25oC, ISD = 38A, VGS = 0V - 1.5 2.1 V
Reverse Recovery Time trr TJ = 25oC, ISD = 19A, dISD/dt = 100A/µs,
VR = 30V
- 200 - ns
Reverse Recovery Charge QRR - 0.25 - µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 50Ω, IPEAK = 28A. (See Figures 14 and 15).
BUZ21
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
00 25 50 75 100 150
0.2
0.4
0.6
0.8
1.0
1.2
125 050 100
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
150
0
30
25
20
10
5
VGS ≥ 10V
15
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
0.5
0.2
0.1
0.05
0.02
0.01
0
ZθJC, TRANSIENT THERMAL IMPEDANCE
1
0.1
0.01
PDM
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
t1
t2
VDS, DRAIN TO SOURCE VOLTAGE (V)
101
ID, DRAIN CURRENT (A)
102
102
100
101
100
10-1 103
10µs
1.5µs
1ms
10ms
100µs
DC
100ms
TC = 25oC
OPERATION IN THIS
AREA LIMITED MAY BE
BY rDS(ON)
TJ = MAX RATED
ID, DRAIN CURRENT (A)
02 6 10
10
20
30
40
12
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
10V
48
PD =
75W 20V
VGS = 6.0V
VGS = 80V
VGS = 5.0V
VGS = 4.5V
VGS = 4.0V
VGS = 5.5V
VGS = 6.5V
VGS = 7.0V
VGS = 7.5V
BUZ21
4
FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
25
20
15
10
5
00510
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
VDS = 25V
IDS(ON), DRAIN TO SOURCE CURRENT (A)
TJ = 25oC
0.1
00102030
ID, DRAIN CURRENT (A)
rDS(ON), ON-STATE RESISTANCE (Ω)
8V
9V
VGS = 5V
20V
10V
0.2
0.3
0.4
40
5.5V 7.5V7V6.5V6V
PULSE DURATION = 80µs
0-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (oC)
0.20
0.15
0.10
0.05
rDS(ON), DRAIN TO SOURCE
0.25 VGS = 10V, ID = 9A
PULSE DURATION = 80µs
ON RESISTANCE (Ω)
0-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (oC)
4
3
2
1
GATE THRESHOLD VOLTAGE
5VDS = VGS, ID = 1mA
010203040
VDS, DRAIN TO SOURCE VOLTAGE (V)
101
100
10-1
10-2
C, CAPACITANCE (nF)
VGS = 0, f = 1MHz
CISS
COSS
CRSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
10
8
6
4
2
00 5 10 15 20 25
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
VDS = 25V
PULSE DURATION = 80µs
TJ = 25oC
BUZ21
5
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
102
101
100
10-1
ISD, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs
TJ = 25oC
TJ = 150oC
15
10
5
00 1020304050
Qg(TOT), TOTAL GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 21A
VDS = 20V
VDS = 80V
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
BUZ21
6
FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
Ig(REF)
0
BUZ21
