Hardware
Documentation
Hall-Effect Sensor
HAL® 202
Edition July 21, 2011
DSH000159_001EN
Data Sheet
HAL202 DATA SHEET
2July 21, 2011; DSH000159_001EN Micronas
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume respon-
sibility for patent infringements or other rights of third
parties which may result from its use. Commercial con-
ditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this doc-
ument and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
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Micronas’ products are not designed, intended or
authorized for use as components in systems intended
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Contents
Page Section Title
Micronas July 21, 2011; DSH000159_001EN 3
DATA SHEET HAL202
4 1. Introduction
41.1.Features
4 1.2. Type Description
4 1.3. Marking Code
4 1.4. Operating Junction Temperature Range
5 1.5. Solderability and Welding
6 2. Functional Description
7 3. Specifications
7 3.1. Outline Dimensions
9 3.2. Dimensions of Sensitive Area
9 3.3. Positions of Sensitive Areas
9 3.4. Absolute Maximum Ratings
9 3.4.1. Storage and Shelf Life
10 3.5. Recommended Operating Conditions
10 3.6. Characteristics
11 3.7. Magnetic Characteristics Overview
13 4. Application Notes
13 4.1. Ambient Temperature
13 4.2. Operation
13 4.2.1. Extended Operating Conditions
13 4.2.2. Start-up Behavior
13 4.3. EMC and ESD
14 5. Data Sheet History
HAL202 DATA SHEET
4July 21, 2011; DSH000159_001EN Micronas
1. Introduction
The HAL202 Hall switch is produced in CMOS tech-
nology. The sensor includes a temperature-compen-
sated Hall plate with active offset compensation, a
comparator, and an open-drain output transistor. The
comparator compares the actual magnetic flux through
the Hall plate (Hall voltage) with the fixed reference
values (switching points). Accordingly, the output tran-
sistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
The sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the junction temperature range from
40 C up to 170 C.
The HAL202 is available in the SMD package
SOT89B-3 and in the leaded versions TO92UA-5 and
TO92UA-6.
1.1. Features
– switching offset compensation
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply voltage
and temperature range
– the decrease of magnetic flux density caused by
rising temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– superior temperature stability for automotive or
industrial applications
– high ESD rating
– EMC corresponding to ISO 7637
1.2. Type Description
Latching Sensors:
The sensor has a latching behavior and require a mag-
netic north and south pole for correct functioning. The
output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
1.3. Marking Code
All Hall sensors have a marking on the package
surface (branded side). This marking includes the
name of the sensor and the temperature range.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A: TJ = 40 C to +170 C
Note: Due to power dissipation, there is a difference
between the ambient temperature (TA) and
junction temperature. Please refer to section
4.1. on page 13 for details.
Type Temperature Range
A
HAL202 202A
DATA SHEET HAL202
Micronas July 21, 2011; DSH000159_001EN 5
Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors.
Ordering Codes, Packaging, Handling”.
1.5. Solderability and Welding
During soldering reflow processing and manual
reworking, a component body temperature of 260 C
should not be exceeded.
Device terminals shall be compatible with laser and
electrical welding. Please, note that the success of the
welding process is subject to different welding parame-
ters which will vary according to the welding technique
used. A very close control of the welding parameters is
absolutely necessary in order to reach satisfying
results. Micronas, therefore, does not give any implied
or express warranty as to the ability to weld the com-
ponent.
Fig. 1–1: Pin configuration
HALXXXPA-T
Temperature Range: A
Package: TQ for SOT89B-3
JQ for TO92UA-5/6
Type: 2xy
Example: HAL202JQ-A
Type: 202
Package: TO92UA-6
Temperature Range: TJ = 40 C to +170 C
1VDD
2,4 GND
3OUT
HAL202 DATA SHEET
6July 21, 2011; DSH000159_001EN Micronas
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a mag-
netic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induc-
tion of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain
output switches to the appropriate state. The built-in
hysteresis eliminates oscillation and provides switch-
ing behavior of output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the mag-
netic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to 15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to 15 V.
Fig. 2–1: HAL202 block diagram
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit
and
Overvoltage
Hall Plate
Switch
Comparator
Output
Clock
Protection
3
OUT
GND
2,4
1
VDD
DATA SHEET HAL202
Micronas July 21, 2011; DSH000159_001EN 7
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-3: Plastic Small Outline Transistor package, 4 leads, with one sensitive area
Weight approximately 0.034 g.
HAL202 DATA SHEET
8July 21, 2011; DSH000159_001EN Micronas
Fig. 3–2:
TO92UA-6: Plastic Transistor Standard UA package, 3 leads
Weight approximately 0.106 g
DATA SHEET HAL202
Micronas July 21, 2011; DSH000159_001EN 9
3.2. Dimensions of Sensitive Area
0.25 mm 0.12 mm (on chip)
3.3. Positions of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
SOT89B-3 TO92UA-5/6
y 0.95 mm nominal 1.08 mm nominal
A4 0.33 mm nominal 0.30 mm nominal
Symbol Parameter Pin Name Min. Max. Unit
VDD Supply Voltage 1 15 281) V
VOOutput Voltage 3 0.3 281) V
IOContinuous Output On Current 3 501) mA
1) as long as TJmax is not exceeded
HAL202 DATA SHEET
10 July 21, 2011; DSH000159_001EN Micronas
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-
tics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
3.6. Characteristics
at TJ = 40 °C to +170 °C, VDD = 3.8 V to 24 V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol Parameter Pin Name Min. Max. Unit Conditions
VDD Supply Voltage 1 3.8 24 V
IOContinuous Output on Current 3 0 20 mA
VOOutput Voltage
(output switched off)
3024V
TJJunction temperature range1) --40
-40
-40
125
140
170
°C
°C
°C
t < 8000 h (not additive)
t < 2000 h (not additive)
t < 1000 h (not additive)
1) Depends on the temperature profile of the application. Please contact Micronas for life time calculations.
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
IDD Supply Current over
Temperature Range
11.635.2mA
VDDZ Overvoltage Protection
at Supply
128.5 32 V IDD = 25 mA, TJ = 25 C,
t = 20 ms
VOZ Overvoltage Protection at Output 3 28 32 V IOH = 25 mA, TJ = 25 C,
t = 20 ms
VOL Output Voltage over
Temperature Range
3130 400 mV IOL = 20 mA
IOH Output Leakage Current over
Temperature Range
310 µA Output switched off,
TJ 150 C, VOH = 3.8 to 24
fosc Internal Oscillator Chopper
Frequency over Temperature
Range
62 kHz
ten(O) Enable Time of Output after
Setting of VDD
135 µs VDD = 12 V
trOutput Rise Time 3 75 400 ns VDD = 12 V,
RL = 820 Ohm,
CL = 20 pF
tfOutput Fall Time 3 50 400 ns
SOT89B Package
Rthja
Rthjc
Thermal Resistance
Junction to Ambient
Junction to Case
212
73
K/W
K/W
Measured with a 1s0p board
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–3)
DATA SHEET HAL202
Micronas July 21, 2011; DSH000159_001EN 11
Fig. 3–3: Recommended footprint SOT89B-3,
Dimensions in mm
All dimensions are for reference only. The pad size may
vary depending on the requirements of the soldering
process.
3.7. Magnetic Characteristics Overview
at TJ = 40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V. Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
TO92UA Package
Rthja
Rthjc
Thermal Resistance
Junction to Ambient
Junction to Case
225
63
K/W
K/W
Measured with a 1s0p board
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
1.05
1.05
1.80
0.50
1.50
1.45
2.90
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching Type TJMin. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL202 40 °C 0.5 2.8 6.5 6.5 2.8 0.5 5.6 mT
latching 25 °C 0.5 2.6 6 62.6 0.5 5.2 mT
140 °C 0.1 2.4 5.5 5.5 2.4 0.1 4.8 mT
170 °C 0.1 2.4 5.5 5.5 2.4 0.1 4.8 mT
HAL202 DATA SHEET
12 July 21, 2011; DSH000159_001EN Micronas
–15
–10
–5
0
5
10
15
20
25
–15–10 –5 0 5 10 15 20 25 30 35 V
mA
VDD
IDD TA = –40 °C
TA = 25 °C
TA = 140 °C
HAL 2xy
Fig. 3–4: Typical supply current
versus supply voltage
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
12345678
V
mA
VDD
IDD TA = –40 °C
TA = 25 °C
TA = 140 °C
TA = 100 °C
HAL 2xy
Fig. 3–5: Typical supply current
versus supply voltage
0
1
2
3
4
5
–50 0 50 100 150 200 °C
mA
TA
IDD
VDD = 3.8 V
VDD = 12 V
VDD = 24 V
HAL 2xy
Fig. 3–6: Typical supply current
versus ambient temperature
DATA SHEET HAL202
Micronas July 21, 2011; DSH000159_001EN 13
4. Application Notes
4.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
At static conditions and continuous operation, the fol-
lowing equation applies:
If IOUT > IDD, please contact Micronas application sup-
port for detailed instructions on calculating ambient
temperature.
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the
application.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
4.2. Operation
4.2.1. Extended Operating Conditions
All HAL202-sensors fulfill the electrical and magnetic
characteristics when operated within the Recom-
mended Operating Conditions (see page 10).
Supply Voltage Below 3.8 V
Typically, the sensor operates with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is
not tested. For special test conditions, please
contact Micronas.
4.2.2. Start-up Behavior
Due to the active offset compensation, the sensor has
an initialization time (enable time ten(O)) after applying
the supply voltage. The parameter ten(O) is specified in
Section 3.6.: Characteristics on page 10.
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the out-
put will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF
.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic field must be above
BONmax, respectively, below BOFFmin.
4.3. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 4–1). The series resistor
and the capacitor should be placed as closely as
possible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Fig. 4–1: Test circuit for EMC investigation
TJTAT+=
TIDD VDD
Rth
=
TAmax TJmax T–=
RV
220
VEMC
VP
4.7 nF
VDD
OUT
GND
1
2
3
RL1.2 k
20 pF
HAL202 DATA SHEET
14 July 21, 2011; DSH000159_001EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
5. Data Sheet History
1. Data Sheet: “HAL202 Hall-Effect Sensor”, July 21,
2011, DSH000159_001EN. First release of the data
sheet.
