BUX84
NPN SILICON POWER TRANSISTOR
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●40 W at 25°C Case Temperature
●2 A Continuous Collector Current
●3 A Peak Collector Current
●Typical tf = 200 ns at 25°CB
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)VCBO800V
Collector-emitter voltage (VBE = 0)VCES800V
Collector-emitter voltage (IB = 0)VCEO400V
Continuous collector current IC2A
Peak collector current (see Note 1)ICM3A
Continuous device dissipation at (or below) 25°C case temperaturePtot40W
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
BUX84
NPN SILICON POWER TRANSISTOR
2
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
5. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VCEO(sus)Collector-emitter
sustaining voltageIC = 0.1 AL = 25 mH(see Note 2)400V
ICESCollector-emitter
cut-off currentVCE= 800 V
VCE= 800 VVBE=0
VBE=0TC = 125°C0.2
1mA
IEBOEmitter cut-off
currentVEB = 5 VIC=0 1 mA
hFEForward current
transfer ratioVCE = 5 VIC=0.1A(see Notes 3 and 4)35
VCE(sat)Collector-emitter
saturation voltageIB = 0.03 A
IB = 0.2 AIC=0.3A
IC= 1A(see Notes 3 and 4)0.8
1V
VBE(sat)Base-emitter
saturation voltageIB = 0.2 AIC= 1A(see Notes 3 and 4)1.1V
ftCurrent gain
bandwidth productVCE = 10 VIC=0.2A12 MHz
CobOutput capacitanceVCB = 20 VIE=0f = 0.1 MHz60 pF
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance2.5°C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETERTEST CONDITIONS †MINTYPMAXUNIT
ton Turn on timeIC = 1 A
VCC = 250 VIB(on) = 0.2 A
(see Figures 1 and 2)IB(off) = -0.4 A 0.250.5µs
tsStorage time1.8µs
tfFall time0.2µs
tfFall timeIC = 1 A
VCC = 250 VIB(on) = 0.2 A
TC = 95°CIB(off) = -0.4 A 0.4µs
3
AUGUST 1978 - REVISED MARCH 1997
BUX84
NPN SILICON POWER TRANSISTOR
PRODUCT INFORMATION
PARAMETER MEASUREMENT INFORMATION
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
tp
F
µµ
100
V1
680 F
µµ
V1
Vcc = 250 V
+25 V
BD135
47
ΩΩ
100
ΩΩ
120
ΩΩ
15
ΩΩ
82
ΩΩ
100
ΩΩ
BD136 680 F
µµ
TUT
T
tp = 20 µs
Duty cycle = 1%
V1
= 15 V, Source Impedance = 50
Ω
0%
C
B
90%
10%
A10%
90%
10%
90%
E
F
D
IB
IC
IB(on)
IB(off)
0%
dIB
dt≥ 2 A/µs
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = toff
BUX84
NPN SILICON POWER TRANSISTOR
4
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
MAXIMUM SAFE OPERATING REGIONS
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
5·00·1 1·0
hFE - Typical DC Current Gain
1·0
10
100 TCP741AJ
VCE = 5 V
TC = 25°C
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TC - Case Temperature - °C
-60 -30 030 60 90 120 150
ICES - Collector Cut-off Current - µA
0·001
0·01
0·1
1·0
10 TCP741AK
VCE = 800 V
VBE = 0
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0.01
0·1
1·0
10 SAP770AB
5
AUGUST 1978 - REVISED MARCH 1997
BUX84
NPN SILICON POWER TRANSISTOR
PRODUCT INFORMATION
THERMAL INFORMATION
Figure 6.
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
t1 - Power Pulse Duration - s
10-5 10-4 10-3 10-2 10-1 100
Z
θ
θJC
/ R
θ
θJC
- Normalised Transient Thermal Impedance
0·01
0·1
1·0 TCP741AL
5%
10%
20%
50%
t1
t2
duty cycle = t1/t2
Read time at end of t1,
TJ(max) - TC = PD(peak) · · RθθJC(max)
ZθθJC
RθθJC
( )
BUX84
NPN SILICON POWER TRANSISTOR
6
AUGUST 1978 - REVISED MARCH 1997
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
1 2 3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
7
AUGUST 1978 - REVISED MARCH 1997
BUX84
NPN SILICON POWER TRANSISTOR
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
