OPTOELECTRONICS PHOTO SCR OPTOCOUPLERS 4N39 4N40 0.56 0.41 DIMENSIONS IN mm PACKAGE CODE E sT1603 ANODE [1] 6] GATE cath (2| tt ANODE B] 4]catH $T1602 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. High efficiency, low degradation, liquid epitaxial LED 10 A, TL compatible, solid state relay 25 W logic indicator lamp driver 400 V symmetrical transistor coupler Underwriters Laboratory (UL) recognized File #E90700 TOTAL PACKAGE DETECTOR *Storage temperature ............. 55C to 150C = *Power dissipation (55C to 50C) ....... 400 mw *Operating temperature ........... 55C to 100C Derate linearly (above 50C) ............. 8 mW/C *Lead solder temperature ......... 260C for10 sec *Off-state and reverse voltage 4N39....... 200 V *Total power dissipation (55C to 50C) .. 450mW = *( 55C to + 100C) 4N40 ....... 400 V Derate linearly (above 50C) ........... 9.0mW/C *Peak reverse gate voltage(55C to 50C) ..... 6V *Direct on-state current (55C to 50C) .... 300 mA INPUT DIODE *Surge on-state current (55C to 50C) (100uS) 10 A *Power dissipation (55C to 50C) ........ 100 mw = *Peak gate current (~55C to 50C) ......... 10 mA Derate linearly (above 50C) ............. 2mwrc *Continuous forward current (55C to 50C) 60 mA *Peak forward current (55C to 50C) ......... 1A *Reverse voltage (55C to 50C) ............. 6V *Indicates JEDEC Registered Data OPTOELECTRONICS PHOTO SCR OPTOCOUPLERS PARAMETER TEST CONDITIONS INPUT DIODE *Forward voltage Vr 11 1.5 Vv l=10 mA *Reverse leakage current ln 10 pA Va=3V Capacitance Cc, 50 pF V=0V, f=1 MHz OUTPUT DETECTOR *Peak off-state voltage (4N39) Vom 200 Vv Rex= 10 kQ, T,=100C (4N40) Vom 400 Vv Rex=10 kQ, T,=100C *Peak reverse voltage (4N39) Vem 200 v T,=100C (4N40) Vim 400 Vv a=100C *On-state voltage Vr 1.3 Vv 1=300 mA *Off-state current (4N39) low 50 LA Vow=200 V, T,=100C, I-=0, Rax=10 KO (4N40) low 150 pA Vou=400 V, T,= 100C, I|-=0, Rax=10 KO *Reverse current (4N39) lr 50 BA Va=200 V, T,=100C, |.-=0 (4N40) la 150 BA Va=400 V, T,=100C, |-=0 *Holding current lh 1.0 mA Vx=50 V, Rex=27 kX MIN. : MAX. TEST CONDITIONS *Input current to trigger (4N39, 4N40) let 30 mA Vx =50 V, Rex=10 kO (4N39, 4N40) ler 14 mA Viq=100 V, Re=27 kO *Turn-on time lon 50 us x= 50 V, |-=30 mA, Rax=10 kQ, RL=200 2 Package capacitance (input to output) 2 pF Input to putput voltage=0 f=1 MHz Coupled dv/dt, input to output (figure 13) 500 V/us CHARACTERISTIC SYMBOL = = - TEST CONDITIONS Surge isolation voltage Viso 1 Minute Isolation voltage Viso 1 Minute *lsolation resistance Riso Vic=500 VDC *Indicates JEDEC Registered Data OPTOELECTRONICS PHOTO SCR OPTOCOUPLERS NOTE (LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION OF THE SCR ANODE LEAD (2LAMBIENT TEMPERATURE MEASURED AT & POINT 2" FROM THE DEVICE JUNCTION. TO AMBIENT TRANSIENT THERMAL MPECANCE-*C PER Ty: HOLDING CURRENT - MICROAMPERES Vay SOV 20 40 460 = 80 too Ooo 9004 oO C02 004 01 O2 O4 log 4 10 20 400 (00 Ty - AMBIENT TEMPERATURE -*C S$t21ti ooo 4 TUME-SECONDS, $T2112 Figure 7. Holding Current vs. Temperature Figure 8. Maximum Transient Thermal impedance NORMALIZED TO Magy SOV Ty 825C LEAO TEMP OC CURRENT : & 5 5 : g : 3 g E 2 8 s 5 3 : : 2 2 AMBIENT HALE-SINE N MAXIMUM ALLOWABLE TEMPERATURE - C N AMB LEAD TEMP OC CURRENT \f2 SINE WAVE AVERAGE 0 co Tac AMBIENT, TEMPERATURE =*C S8T2113 ON STATE CURRENT - AMPERES ST2114 Figure 9, Off-State Forward Current vs. Temperature Figure 10. On-State Current vs Maximum Allowable Temperature JUNCTION TEMPERATURE 25C JUNCTION TEMPERATURE 4Vfq)- CRITICAL RATE OF RISE APPLIED FORWIRD VOLTAGE - Volts/y sec 7 ~ ON-STATE CURRENT AMPERES INCREASES TO FORWARD 56K 10 20 30 Th, AMBIENT TEMPERATURE-*c V_-ON-STATE VOLTAGE - VOLTS "a r ST2116 ST; Figure 11. dv/dt vs. Temperature Figure 12, On-State Characteristics 2-10 OPTOELECTRONICS DUAL SPLIT-DARLINGTON OPTOCOUPLERS < 90 fi 80 th | g & 70|Ir = 0.5 mA/ q = 60 e i ei 5 50 i 9 1000 et eat 40 ca 2 at EE 5 30 99 id | E 10 9 100 1.0 2.0 0.1 1.0 10 100 Vo OUTPUT VOLTAGE 1V INPUT FORWARD CURRENT-mA C1957 C1958 Fig. 1. DC Transfer Characteristics Fig. 2. Current Transfer Ratio vs. Input Forward Current 10.0 100 < Ta = 85C E Ta = 25C i Gi . Be c Ta = 28C Z 10 5 10 w 5 ax be 35 5 Oo a FE z 2 2 0.1 2 1.0 3 z | cco=5V 3 Vo=0.4V ae 64 ~ 01 01 1.0 10 100 1.0 12 14 1.6 INPUT FORWARD CURRENT mA Vr, FORWARD INPUT VOLTAGE (V) C1959 C1600 Fig. 3. Output Current vs. Fig. 4. Forward Input Current vs. Input Forward Current Forward Input Voltage locL (PER CHANNEL) SUPPLY CURRENT mA 01 0.1 Fig. 5. 2730/31 7 V = Veco 2731 18. V = Voc 1.0 le FORWARD INPUT CURRENT C1995 5 10 2 100 Supply Current Per Channel vs. Input Forward Current 4440 QT OPTOELECTRONICS APPLICATIONS 10A, T?7L COMPATIBLE, SOLID STATE RELAY Use of the 4N40 for high sensitivity, 5300V isolation capability, provides this highly reliable solid state relay design. This design is com- patible with 74, 74S and 74H series TL logic systems inputs and 220V AC loads up to 10A. p{ LOAD 100 1. 3477 7RO.F "CONTACT" 220V AC SCI46D _________o 47 IN5060 (4) ST2117 25W, LOGIC INDICATOR LAMP DRIVER The high surge capability and non-reactive input characteristics of the 4N40 allow it to directly couple, without buffers, T?7L and DTL logic to indicator alarm devices, without danger of introducing noise and logic glitches. INDICATOR LAMP i). 5100.0. 220VAC 0.1 ALF $T2118 400V SYMMECTRICAL TRANSISTOR COUPLER Use of the high voltage PNP portion of the 4N40 provides a 400V transistor capable of conducting positive and negative signals with current transfer ratios of over 1%. This function is useful in remote instrumentation, high voltage power supplies and test equipment. Care should be taken not to exceed the 400 mW power dissipation rating when used at high voltages. $T2119 FIGURE 13 COUPLED dv/dt - TEST CIRCUIT Vp = 800 Volts tp =.010 Seconds f = 25 Hertz + 100 VAC Ta =259C Vp EXPONENTIAL RAMP GEN, OSCILLOSCOPE $T2120