IS31AP4915-QFLS2-EB - ISSI, Integrated Silicon Solution Inc

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 1

Rev.B, 09/11/2012

20VP-P CHARGE PUMP CERAMIC SPEAKER DRIVER September 2012

GENERAL DESCRIPTION

The IS31AP4915 features a mono power amplifier

with an integrated charge-pump power supply

specifically designed to drive the high capacitance of

a ceramic loudspeaker.

The IS31AP4915 maximizes battery life by offering

high performance efficiency.

The IS31AP4915 is ideally suited to deliver the high

output-voltage swing required to drive

ceramic/piezoelectric speakers.

The device utilizes comprehensive click-and-pop

suppression and shutdown control. The IS31AP4915

is fully specified over the -40°C to +85°C extended

temperature range and is available in small lead-free

16-pin QFN (4mm × 4mm) packages.

TYPICAL APPLICATION CIRCUIT

FEATURES

 Integrated charge-pump power supply - no

inductor required

 Thermal protection

 Pop reduction circuitry

 20VP-P voltage swing into piezoelectric speaker

 QFN-16, 4mm × 4mm

APPLICATIONS

 CD/MP3 players

 Smart phones

 Cellular phones

 PDAs

 Handheld gaming

10 uF

33nF

1 uF

SHUTDOWN

2. 5 - 5. 5V

OUT +

PGND

C1P

SGND SVSS

PVSS

C1N

PVDD

SVDD

SD OUT -

200K

100K

10K

10ohm

220pF

Figure 1 Typical Application Circuit

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 2

Rev.B, 09/11/2012

PIN CONFIGURATION

Package Pin Configuration (Top View)

QFN-16

SVSS

OUT-

SVDD

OUT+

C1N

PVSS

PGND

SGND

PVDD

C1P

PIN DESCRIPTIO N

No. Pin Description

1 C1P Charge pump flying capacitor positive terminal.

2 PGND Power ground, connect to ground.

3 C1N Charge pump flying capacitor negative terminal.

4 PVSS Output from charge pump.

5, 13 NC No connection.

6 SVSS Amplifier negative supply, connect to PVSS.

7 OUT- Negative output signal.

8 SVDD Amplifier positive supply, connect to PVDD.

9 OUT+ Positive output signal.

10 FB Feed back.

11, 15 SD

______ Shutdown, active low logic.

12 IN Audio input signal.

14 SGND Signal ground, connect to ground.

16 PVDD Charge pump supply voltage, connect to positive supply.

Thermal Pad Connect to GND.

Copyright©2012IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatany

timewithoutnotice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersare

advisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts.

IntegratedSiliconSolution,Inc.doesnotrecommendtheuseofanyofitsproductsinlifesupportapplicationswherethefailureormalfunctionofthe

productcanreasonablybeexpectedtocausefailureofthelifesupportsystemortosignificantlyaffectitssafetyoreffectiveness.Productsarenot

authorizedforuseinsuchapplicationsunlessIntegratedSiliconSolution,Inc.receiveswrittenassurancetoitssatisfaction,that:

a.)theriskofinjuryordamagehasbeenminimized;

b.)theuserassumeallsuchrisks;and

c.)potentialliabilityofIntegratedSiliconSolution,Incisadequatelyprotectedunderthecircumstances

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 3

Rev.B, 09/11/2012

ORDERING INFORMATION

Industrial Range: -40°C to +85°C

Order Part No. Package QTY/Reel

IS31AP4915-QFLS2-TR QFN-16, Lead-free 3000

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 4

Rev.B, 09/11/2012

ABSOLUTE MAXIMUM RATINGS

Supply voltage, VDD -0.3V ~ +6.5V

Voltage at any input pin -0.3V ~ VDD+0.3V

Maximum junction temperature, TJMAX 150°C

Storage temperature range, TSTG -65°C ~ +150°C

Operating temperature range, TA 40°C ~ +85°C

Note:

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only

and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIO NS

Symbol Parameter Min. Max. Unit

SVDD, PVDD Supply voltage 2.5 6.5 V

VIH High level input voltage 1.5 V

VIL Low level input voltage 0.5 V

ELECTRICAL CHARACTERISTICS

TA=25°C. (Note 1)

Symbol Parameter Condition Min. Typ. Max. Unit

|VOS| Output Offset Voltage 6 mV

IDD Supply Current

VDD = 3V, SD

______ = VDD 6.0 8.0

VDD = 5V, SD

______ = VDD 8.5 10.5

Shutdown mode, VDD = 2.5V ~ 6.5V 1 µA

ELECTRICAL CHARACTERISTICS

VDD = 3.6V, TA = 25°C (unless otherwise noted) (Note 2)

Symbol Parameter Condition Min. Typ. Max. Unit

VOUT Output voltage

f = 1kHz

THD+N = 10%

ZL= 1F+10

Vcc = 5V 7.9

VRMS

Vcc = 3.6V 5.7

Vcc = 2.7V 4.3

THD+N Total harmonic distortion

plus noise

ZL= 1F+10,VOUT = 1kHz/2VRMS 0.01 %

ZL= 1F+10,VOUT = 1kHz/4VRMS 0.01

Vn Noise output voltage 10 µVRMS

fosc Charge pump switching

frequency 320 kHz

tON Start-up time from shutdown 450 µs

SNR Signal-to-noise ratio 100 dB

Thermal shutdown Threshold 160 °C

Hysteresis 15 °C

Note 1: Production testing of the device is performed at 25°C. Functional operation of the device and parameters specified over other

temperature range, are guaranteed by design, characterization and process control.

Note 2: Guaranteed by design.

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 5

Rev.B, 09/11/2012

TYPICAL OPERATING CHARACTERISTICS

Vcc = 2.7V

Vout = 3Vrms

Vout = 1.25Vrms

Figure 2 THD+N vs. Frequency(RL = 1µF+10)

Vcc = 3.6V

Vout = 4Vrms

Vout = 2Vrms

Figure 4 THD+N vs. Frequency(RL = 1µF+10)

Vcc = 5V

Vout = 6Vrms

Vout = 3Vrms

Figure 6 THD+N vs. Frequency(RL = 1µF+10)

Vcc = 2.7V

fIN = 1kHz

Figure 3 THD+N vs. Output Voltage(RL = 1µF+10)

Vcc = 3.6V

fIN = 1kHz

Figure 5 THD+N vs. Output Voltage(RL = 1µF+10)

Vcc = 5 V

fIN = 1kHz

Figure 7 THD+N vs. Output Voltage(RL = 1µF+10)

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 6

Rev.B, 09/11/2012

012345

Vcc = 3.6V

fIN = 1kHz

Figure 8 Power Consumption vs. Output Voltage(RL = 1µF+10)

2.5 3 3.5 4 4.5 5 5.5

Figure 10 Supply Current vs. Supply Voltage(RL = 1µF+10)

01 2 34 567

Vcc = 5V

fIN = 1kHz

Figure 9 Power Consumption vs. Output Voltage(RL = 1µF+10)

01 2 3 4 5 67

Vcc = 5V

fIN = 1kHz

Figure 11 Supply Current vs. Output Voltage(RL = 1µF+10)

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 7

Rev.B, 09/11/2012

FUNCTIONAL BLOCK DIAGRAM

Bias

SDB

C1P

OUT+

SVCC Click-and-pop

Suppression UVLO &

SD Control Charge Pump

C1N

OUT-

PVCC

SGND

PGND

SVSS

PVSS

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 8

Rev.B, 09/11/2012

APPLICATION INFORMATION

INPUT-BLOCKING CAPACITORS

DC input-blocking capacitors are required to be added

in series with the audio signal into the input pin of the

IS31AP4915. This capacitor block the DC portion of

the audio source and allow the IS31AP4915 inputs to

be properly biased to provide maximum performance.

These capacitors form a high-pass filter with the input

impedance of the IS31AP4915. The cutoff frequency

is calculated using Equation 1. For this calculation, the

capacitance used is the input-blocking capacitor and

the resistance is the input impedance of the

IS31AP4915. Because the gains of both the

IS31AP4915 is fixed, the input impedance remains a

constant value. Using the input impedance value from

the operating characteristics table, the frequency

and/or capacitance can be determined when one of

the two values is given.

（1）

CHARGE PUMP FLYING CAPACITOR AND PVSS

CAPACITOR

The charge pump flying capacitor serves to transfer

charge during the generation of the negative supply

voltage. The PVSS capacitor must be at least equal to

the charge pump capacitor in order to allow maximum

charge transfer. Low ESR capacitors are an ideal

selection, and a value of 10F is typical. Capacitor

values that are smaller than 10F can be used, but

the maximum output power is reduced and the device

may not operate to specifications

DECOUPLING CAPACITORS

The IS31AP4915 require adequate power supply

decoupling to ensure that the noise and total harmonic

distortion (THD) are low. A good low

equivalent-series-resistance (ESR) ceramic capacitor,

typically 1F, placed as close as possible to the device

VDD lead works best. Placing this decoupling capacitor

close to the IS31AP4915 is important for the

performance of the amplifier. For filtering lower

frequency noise signals, a 10F or greater capacitor

placed near the audio power amplifier would also help,

but it is not required in most applications because of

the high PSRR of this device.

LAYOUT RECOMMENDATIONS

The SGND and PGND pins of the IS31AP4915 must

be routed separately back to the decoupling capacitor

in order to provide proper device operation. If the

SGND and PGND pins are connected directly to each

other, the part functions without risk of failure, but the

noise and THD performance do not meet the

specifications.

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 9

Rev.B, 09/11/2012

CLASSIFICATION REFLOW PROFI LES

Profile Feature Pb-Free Assembly

Preheat & So ak

Temperature min (Tsmin)

Temperature max (Tsmax)

Time (Tsmin to Tsmax) (ts)

150°C

200°C

60-120 seconds

Average ramp-up rate (Tsmax to Tp) 3°C/second max.

Liquidous temperature (TL)

Time at liquidous (tL)

217°C

60-150 seconds

Peak package body temperature (Tp)* Max 260°C

Time (tp)** within 5°C of the specified

classification temperature (Tc) Max 30 seconds

Average ramp-down rate (Tp to Tsmax) 6°C/second max.

Time 25°C to peak temperature 8 minutes max.

Figure 12 Classification Profile

IS31AP4915

Integrated Silicon Solution, Inc. – www.issi.com 10

Rev.B, 09/11/2012

PACKAGE INFORMATION

QFN-16

Note: All dimensions in millimeters unless otherwise stated.