NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES * This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz * MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz * Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V * 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG260234 Order Number Package NESG260234-AZ 3-pin power minimold (Pb-Free) NESG260234-T1 Quantity Note1, 2 25 pcs Supplying Form * Magazine case (Non reel) NESG260234-T1-AZ 1 kpcs/reel * 12 mm wide embossed taping * Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains Lead in the part except the electrode terminals. 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (T A = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 600 mA 1.9 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10547EJ02V0DS (2nd edition) Date Published May 2005 CP(K) The mark shows major revised points. NESG260234 THERMAL RESISTANCE (T A = +25C) Parameter Termal Resistance from Junction to Ambient Symbol Ratings Unit Rthj-a 65 C/W Note 2 Note Mounted on 34.2 cm 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (T A = +25C) Parameter Collector to Emitter Voltage Collector Current Input Power Note Symbol MIN. TYP. MAX. Unit VCE 6.0 7.2 V IC 400 500 mA Pin 15 20 dBm Note Input power under conditions of VCE 6.0 V, f = 460 MHz 2 Data Sheet PU10547EJ02V0DS NESG260234 ELECTRICAL CHARACTERISTICS (T A = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 9.2 V, IE = 0 mA 1 A Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA 1 A VCE = 3 V, IC = 100 mA 80 120 180 VCE = 6 V, IC (set) = 30 mA (RF OFF), 19 22 dB 19 dB 28.5 30.0 dBm 30.0 dBm 50 % 60 % DC Current Gain hFE Note RF Characteristics Linner Gain (1) GL f = 460 MHz, Pin = 0 dBm Linner Gain (2) GL VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm Output Power (1) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm Output Power (2) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm C Collector Efficiency (1) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm C Collector Efficiency (2) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm Note Pulse measurement: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Rank FB Marking SP hFE Value 80 to 180 Data Sheet PU10547EJ02V0DS 3 NESG260234 TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified) Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10547EJ02V0DS NESG260234 Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 5 NESG260234 Remark The graphs indicate nominal characteristics. 6 Data Sheet PU10547EJ02V0DS NESG260234 S-PARAMETERS PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 7 NESG260234 EVALUATION CIRCUIT (f = 460 MHz) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. EVALUATION BOARD (f = 460 MHz) Notes 1. 20 20 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. 8 : Through holes Data Sheet PU10547EJ02V0DS NESG260234 COMPONENT LIST Component Maker Value Size (TYPE) Purpose C1 Murata 10 pF 1005 Input DC Block/Input RF Matching C2 Murata 4 pF 1005 Input RF Matching C3 Murata 33 pF 1005 Input DC Block/Output RF Matching C4 Murata 10 000 pF 1005 RF GND C5 Murata 1 F 1608 RF GND L1 Toko 68 nH 1005 RF Block/Input RF Matching L2 Toko 33 nH LLQ2021 L3 Toko 1 nH 1005 Input RF Matching L4 Toko 8.2 nH 1005 Input RF Matching L5 Toko 8.2 nH LLQ2021 R1 SSM 15 1608 RF Block/Output RF Matching Output RF Matching Improve Stability Data Sheet PU10547EJ02V0DS 9 NESG260234 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 10 Data Sheet PU10547EJ02V0DS