FERD60U45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary technology that achieves the best in class VF/IR for a given silicon surface. K A2 Packaged in TO-220AB, this device is intended to be used in switch mode power supplies, or automotive applications K Table 1. Device summary A1 K A2 TO-220AB FERD60U45CT IF(AV) 2 x 30 A VRRM 45 V VF(typ) 0.345 V Features ST advanced rectifier process Stable leakage current over reverse voltage Low forward voltage drop High frequency operation November 2013 This is information on a product in full production. DocID024893 Rev 1 1/7 www.st.com Characteristics 1 FERD60U45C Characteristics Table 2. Absolute ratings (limiting values, per diode at 25 C, unless otherwise stated) Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 45 V Forward rms current 60 A 30 60 A 300 A -65 to + 175 C 175 C Per diode Per device IF(AV) Average forward current, = 0.5 Tc =145 C Tc =135 C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj dPtot --------------dTj 1. Maximum operating junction temperature (1) 1 - condition to avoid thermal runaway for a diode on its own heatsink ------------------------Rth j - a Table 3. Thermal resistances Symbol Rth (j-c) Rth(c) Parameter Per diode Total Junction to case Coupling Value Unit 1.4 0.9 C/W 0.4 C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c). Table 4. Static electrical characteristics (per diode) Symbol IR(1) Parameter Reverse leakage current Test Conditions Tj = 25 C Tj = 125 C Tj = 25 C VF(2) Forward voltage drop Tj = 125 C Tj = 25 C Tj = 125 C VR = VRRM IF = 15 A Typ. Max. Unit 1500 A 50 100 mA 0.38 0.41 0.345 0.375 0.46 0.50 0.47 0.51 V IF = 30 A 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.32 x IF(AV) + 0.0063 IF2(RMS) 2/7 Min. DocID024893 Rev 1 FERD60U45C Characteristics Figure 1. Average forward power dissipation versus average forward current (per diode) 25 PF(AV) (W) 35 d = 0.05 20 d = 0.1 d = 0.2 d = 0.5 IF(AV) (A) Rth(j-a)=Rth(j-c) 30 25 d=1 15 20 15 10 10 T 5 IF(AV) (A) T 5 d=tp/T d=tp/T tp 0 0 0 5 10 15 20 25 30 35 40 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Figure 2. Average forward current versus ambient temperature ( = 0.5, per diode) Zth(j-c)/Rth(j-c) 0 Tamb (C) tp 25 50 75 100 125 150 175 Figure 4. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+02 IR (mA) 0.9 Tj=125C 0.8 0.7 1.E+01 0.6 0.5 0.4 1.E+00 0.3 0.2 Single pulse Tj=25C tp (s) 0.1 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode) 10000 VR (V) 1.E-01 C (pF) 0 5 10 15 20 25 30 35 40 45 Figure 6. Forward voltage drop versus forward current (typical values, per diode) 100.0 IF (A) F=1MHz Vosc =30mVRMS Tj=25C 10.0 1000 Tj=125C Tj=25C 1.0 VR (V) 100 1 10 100 VF (V) 0.1 0.00 DocID024893 Rev 1 0.10 0.20 0.30 0.40 0.50 0.60 0.70 3/7 7 Package Information 2 FERD60U45C Package Information Epoxy meets UL94,V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Figure 7. TO-220AB dimension definitions A E P Resin gate 0.5 mm max. protrusion(1) F Q H1 D D1 L30 L20 b1 J1 L1 L b e e1 Resin gate 0.5 mm max. protrusion(1) (1) Resin gate position accepted in each of the two position shown as well as the symmetrical opposites 4/7 DocID024893 Rev 1 c FERD60U45C Package Information Table 5. TO-220AB dimension values Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.17 0.18 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.60 0.62 D1 1.27 typ. 0.05 typ. E 10 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.24 0.26 J1 2.40 2.72 0.094 0.107 L 13 14 0.51 0.55 L1 3.50 3.93 0.137 0.154 L20 16.40 typ. 0.64 typ. L30 28.90 typ. 1.13 typ. P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 DocID024893 Rev 1 5/7 7 Ordering Information 3 FERD60U45C Ordering Information Table 6. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode FERD60U45CT FERD60U45CT TO-220AB 2.2 g 50 Tube Revision history Table 7. Document revision history 6/7 Date Revision 13-Nov-2013 1 Description of Changes Previous version DocID024893 Rev 1 FERD60U45C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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