DM2G100SH12AE - MagnaChip Semiconductor

Copyright @ Dawin Electronics Corp. A ll r ight reserved

DM2G100SH12AE

Apr. 2008

1/6

Description

DA WIN ’ S I G B T 7DM-1 Package dev ices are opt imized to reduce losses and

switching noise in high frequency power condit ioning elect rical systems.

These I G BT m odules are ideally suited for power invert ers, moto rs driv es

and ot her applications where switching losses are signif i cant port ion of t he

t ot a l losses.

Features

☞High Speed Switching

☞BVCES = 1200V

☞Low Conduct ion Loss : VCE(sat) = 1.8 V (ty p.)

☞Fast & Soft Ant i-Paral lel FWD

☞Short circu it rated : Min. 10uS at TC=100℃

☞Reduced EM I and R FI

☞I solation Ty pe Package

Applications

Mot or Drives, High Power Invert ers, Welding Machine,

I nduct ion Heat ing, UP S , C VC F, Robot ics , Servo C ont rols

Absolu te M axi mu m Ratin g s@ Tj=25℃(Per Leg)

Symbol Parameter Ratings UnitConditions

Equiv alent Circu it

E qu ival en t Ci r cuit and Packag e

Package : 7DM-1 Series

Please see the package out line inf ormat ion

VCES

VGES

IC

ICM (1)

IF

IFM

TSC

PD

Tj

Tstg

Viso

C o llec tor-E mitt e r V o lta g e

Gat e-Emitter Voltage

Collect or Current

Pulsed Collector Current

Diode Cont inuous Forward Current

Diode Maximum Forward Current

Short C ircuit Wit hst and T ime

Maximum Power Dissipation

Operat ing Junction Temperature

St orage Temperature Range

I solation Volt age

Mount ing screw Torque :M6

Power te rminals screw T orque :M 5

1200

±20

150

100

200

75

150

10

700

-40 ~ 150

-40 ~ 125

2500

4.0

2.0

V

A

uS

W

℃

V

N.m

-

TC= 25℃

TC= 80℃

-

TC= 100℃

-

TC= 100℃

TC= 25℃

-

AC 1 minute

-

6

7

5

4

①②③

H igh Pow er SPT+& Lugged Type IGBT Module

Copyright @ Dawin Electronics Corp. A ll r ight reserved

DM2G100SH12AE

Apr. 2008

2/6

E l ectr ical Char acteristi cs o f IGBT @ TC=25℃(unless otherwise specified)

Symbol Parameter Values Unit

Conditions Min. Typ. Max.

C - E B reakdown V oltage

Temperat ure Coeff. of

Breakdown Voltage

G - E t hreshold volt age

Colle ctor cutoff Current

G - E leakage Current

Colle ctor to Emitter

sat uration v oltage

I nput capacitance

Output capacitance

Reverse transf er capacit ance

Turn on delay time

Tu rn o n ris e time

Turn off delay tim e

Turn off fall time

Turn on Swit ching Loss

Turn off Switching Loss

Tot al Switching Loss

Short C ircuit Wit hst and T ime

Tot al Gat e Charge

Gat e-Emitter Charge

Gate-Collect or Charge

1200

-

5

-

10

-

0.6

-

1.8

2.0

7.43

0.52

0.34

125

60

420

60

8.6

6.8

15.4

-

1050

90

450

-

8

1.0

±200

2.5

-

V

V/℃

V

mA

nA

V

nF

nS

mJ

uS

nC

VGE = 0V , IC= 1.0m A

VGE = 0V , IC= 1mA

IC=2.0mA , VCE = V GE

VCE = 1200V , VGE = 0V

VGE =±20V

IC=100A, VGE=15V @TC= 25 ℃

IC=100A, VGE=15V @TC=100℃

VGE = 0 V , f = 1 ㎒

VCE = 25V

VCC = 600V , IC= 100A

VGE = ±15V

RG= 6.8 Ω

I nduct iv e Load

VCC = 600V, VGE = ±15V

RG=6.8Ω@TC= 100℃

VCC = 600V

VGE =±15V

IC= 100A

BVCES

ΔBVCES/

ΔTJ

VGE(th)

ICES

IGES

VCE(sat)

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tsc

Qg

Qge

Qgc

Copyright @ Dawin Electronics Corp. A ll r ight reserved

DM2G100SH12AE

Apr. 2008

3/6

E l ectr ical Char acteristi cs o f F RD @ TC=25℃(unless ot herwise specif ied )

Symbol Parameter Values UnitConditions Min. Typ. Max.

Diode Forw ard Voltage

Diode Reverse

Recov ery Time

Diode Peak Reverse

Rec over y Cur r e nt

Diode Reverse

Recovery Charge

VFM

trr

Irr

Qrr

Th ermal Character i stics and Wei g h t

Symbol Parameter Values UnitConditions Min. Typ. Max.

Junct ion-t o-Case(IG BT Part , Pe r 1/2 M odule)

Junct ion-t o-Case(DI O DE Part , Per 1/2 Module)

Case-t o-Sink ( Conduct iv e grease applied)

Weight of Module

℃/W

g

-

0.18

0.45

-

200

-

0.05

-

RθJC

RθCS

Weight

IF =100A

IF =100A , VR =600V

di/ dt = -200A/uS

Tc =25℃

Tc = 100℃

Tc =25℃

Tc = 100℃

Tc =25℃

Tc = 100℃

Tc =25℃

Tc = 100℃

-

2.1

2.0

140

155

35

48

2300

8900

3.0

-

V

nS

A

nC

Copyright @ Dawin Electronics Corp. A ll r ight reserved

DM2G100SH12AE

Apr. 2008

4/6

0

20

40

60

80

100

120

0.1110100

0

4

8

12

16

20

0 4 8 12 16 20

0

4

8

12

16

20

0 4 8 12 16 20

0

50

100

150

200

250

01 2345

0

25

50

75

100

125

150

175

02 4 6

0

50

100

150

200

250

0246

P erfor m an ce Cur ves

20V 15V 12V

10V

VGE=8V

C ommon E mitte r

TC=25℃20V 15V 12V

10V

C ommon E mitte r

TC=125℃

TC=25℃

Du ty cycle = 5 0%

TC=125℃

Power Dissipation = 130W

C ommon E mitte r

TC=25℃

200A

100A

IC=50A

C ommon E mitte r

TC=125℃

200A

100A

IC=50A

VGE=8V

Collect or – Emitt er Voltage, VCE [V]

Coll e c to r Curr ent, I C[A]

Collect or – Emitt er Voltage, VCE [V]

Coll e c to r Curr ent, I C[A]

Collect or – Emitt er Voltage, VCE [V]

Coll e c to r Curr ent, I C[A]

Gate – Emitter Voltage, VGE [V]

Collect or – Emitt er Voltage, VCE [V]

Gate – Emitter Voltage, VGE [V]

Frequen cy [KHz]

Load Cu r r ent [A]

Fig 1. Typical Output characteristics

Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency

Fig 5. Typical Saturation Voltage vs. VGE

Fig 2. Typical Output characteristics

Fig 6. Typical Saturation Voltage vs. VGE

Copyright @ Dawin Electronics Corp. A ll r ight reserved

DM2G100SH12AE

Apr. 2008

0.001

0.01

0. 1

1

1. E-05 1.E-04 1.E -03 1.E-02 1.E -01 1. E +00

0

5

10

15

20

00.10.20.30.40.50.60.70.80.91

0. 1

1

10

0 5 10 15 20 25 30 35

Collect or – Emitt er Voltage, VCE [V]

Capaci tance [ nF]

C ommon E mitte r

VGE=0V, f =1MHZ

TC=25℃

Cies

Coes

Cres

Ga te C ha rg e, Qg [nC ]

Gate – Emitter Voltage, VGE [V]

C ommon E mitte r

VCE=600V, IC=100A

TC=25℃

Rectangular Pulse Du ration Time [sec]

Therma l Response Zt hjc [ /W ]

℃

IGBT :

DIODE :

TC=25℃

F orwa rd C urrent, IF[A]

5/6

Fig 7. Capacitance characteristics Fig 8. Gate Charge characteristics

Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics

VCC=600V

VCC=800V

Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation

vs. Case Temperature

Tc [ ℃]

150

120

90

60

30

0

0 20 40 60 80 100 120 140 160

Ic [ A ]

TJ= 150℃

VGE ≥15V

Tc [ ℃]

750

600

450

300

150

0

0 20 40 60 80 100 120 140 160

PD[ W ]

TJ≤150℃

PD= f( Tc)

Forwar d Drop Volt age, VF[V]

TC=125℃

TC=25℃

250

200

150

100

50

0

0 1 2 3 4

Copyright @ Dawin Electronics Corp. A ll r ight reserved

DM2G100SH12AE

Apr. 2008

P ackage Ou t L ine In for mati o n

6/6

7DM-1

1

2

3

80±0.3

23±0.5 23±0.5

93±0.3 M5 DP9

Φ6. 4 ±0. 2

Mounting Hole

4±0.3

17±0.5

LABEL PLATE

6±0.2 16.5±0.2

1±0.05

MAX 31

22±0.5

90±0.5

Dimensions in mm

6.1±0.5

32±0.5

12±0.5

35±0.5

5

4

6

7

18.5±0.2

12±0.2

15.5±0.2

14.5±0.3

35±0.5

5±0.3

4±0.3

D W

2.8±0.05

9.8±0.2

Bolt Depth