ZXTN25060BZQ 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEX > 150V BVCEO > 60V BVECO > 6V IC = 5A Continuous Collector Current VCE(sat) < 70mV @ 1A RCE(sat) = 48m for a Low Equivalent On-Resistance Very Low Saturation Voltages Excellent hFE Characteristics 6V Reverse Blocking Capability Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT89 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.055 grams (Approximate) Applications Motor Driving (including DC fans) Solenoid, Relay and Actuator Drivers DC-DC Modules Power Switches MOSFET Gate Drivers SOT89 C E C C B B E Top View Top View Pin-Out Equivalent Circuit Ordering Information (Notes 4 & 5) Product ZXTN25060BZQTA Notes: Compliance Automotive Marking 1C7 Reel size (inches) 7 Tape width (mm) 12mm Quantity per reel 1,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT89 1C7 YWW ZXTN25060BZQ Document number: DS38348 Rev. 1 - 2 1C7= Product Type Marking Code YWW = Date Code Marking Y = Last Digit of Year (ex: 5 = 2015) WW = Week Code (01 ~ 53) 1 of 8 www.diodes.com October 2015 (c) Diodes Incorporated ZXTN25060BZQ Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit VCBO 150 V Collector-Emitter Voltage (Forward Blocking) VCEX 150 V Collector-Emitter Voltage VCEO 60 V Emitter-Collector Voltage (Reverse Blocking) VECO 6 V Emitter-Base Voltage VEBO 7 V Continuous Collector Current IC 5 A Base Current IB 1 A ICM 10 A Collector-Base Voltage Peak Pulse Current Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 8) (Note 9) (Note 6) (Note 7) (Note 8) (Note 9) Value PD RJA (Note 10) Unit 1.1 1.8 2.4 4.46 117 68 51 28 RJL 8 TJ, TSTG -55 to +150 W C/W C ESD Ratings (Note 11) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 8. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 9. Same as Note 7 measured at t<5 seconds. 10. Thermal resistance from junction to solder-point (on the exposed collector pad). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN25060BZQ Document number: DS38348 Rev. 1 - 2 2 of 8 www.diodes.com October 2015 (c) Diodes Incorporated ZXTN25060BZQ VCE(sat) 25mm x 25mm 10 Limited 1 DC 1s 100ms 100m 10ms Single Pulse T amb=25C 10m 100m 1ms 100s 1 100 IC Collector Current (A) IC Collector Current (A) Thermal Characteristics and Derating Information 10 1 10 Safe Operating Area Max Power Dissipation (W) BV(BR)CEV=150V T amb=25C 0 VCE Collector-Emitter Voltage (V) 2.4 Failure may occur in this region BV(BR)CEO=60V 20 40 60 80 100 120 140 160 VCE Collector-Emitter Voltage (V) Safe Operating Area 50mm x 50mm 2.0 25mm x 25mm 1.6 15mm x 15mm 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 Temperature (C) Derating Curve ZXTN25060BZQ Document number: DS38348 Rev. 1 - 2 3 of 8 www.diodes.com October 2015 (c) Diodes Incorporated ZXTN25060BZQ 120 100 T amb=25C 100 Maximum Power (W) Thermal Resistance (C/W) Thermal Characteristics and Derating Information (continued) see note (a) 80 D=0.5 60 40 D=0.2 Single Pulse 20 D=0.05 0 100 D=0.1 1m 10m 100m 1 10 100 Single Pulse T amb=25C 15mm x 15mm 10 1 100 1k Pulse Width (s) 1 10 100 1k Pulse Width (s) 100 70 T amb=25C 60 Maximum Power (W) Thermal Resistance (C/W) 10m 100m Pulse Power Dissipation Transient Thermal Impedance see note (b) 50 40 D=0.5 30 Single Pulse 20 D=0.2 D=0.05 10 D=0.1 0 100 1m 10m 100m 1 10 100 Single Pulse T amb=25C 25mm x 25mm 10 1 100 1k 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 100 50 40 T amb=25C Maximum Power (W) Thermal Resistance (C/W) 1m see note (c) 30 D=0.5 20 Single Pulse D=0.2 D=0.05 10 0 100 D=0.1 1m 10m 100m 1 10 100 1k Single Pulse T amb=25C 50mm x 50mm 10 1 100 Document number: DS38348 Rev. 1 - 2 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance ZXTN25060BZQ 1m 4 of 8 www.diodes.com Pulse Power Dissipation October 2015 (c) Diodes Incorporated ZXTN25060BZQ Electrical Characteristics (@TA = +25C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 150 190 -- V IC = 100A Test Condition Collector-Emitter Breakdown Voltage (Forward Blocking) BVCEX 150 190 -- V IC = 100A, RBE <1k or -1V < VBE <0.25V Collector-Emitter Breakdown Voltage (Note 12) BVCEO 60 80 -- V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 7 8.0 -- V IE = 100A Emitter-Collector Breakdown Voltage (Reverse Blocking) BVECX 6 8 -- V IE = 100A, RBC <1k or <0.25V > VBC >0.25V Emitter-Collector Breakdown Voltage (Base Open) BVECO 6 7 -- V IE = 100A 50 20 nA A VCB = 120V VCB = 120V, TA = +100C Collector-Base Cutoff Current ICBO -- <1 Collector-Emitter Cutoff Current ICEX -- -- 100 nA VCE = 120V, RBE <1k or -1V < VBE <0.25V Emitter-Base Cutoff Current IEBO -- <1 50 nA VEB = 5.6V 70 90 230 305 mV IC = 1A, IB = 100mA IC = 1A, IB = 50mA IC = 4A, IB = 400mA IC = 5A, IB = 500mA Collector-Emitter Saturation Voltage (Note 12) VCE(sat) -- 55 70 185 240 Base-Emitter Saturation Voltage (Note 12) VBE(sat) -- 1,020 1,100 mV IC = 5A, IB = 500mA Base-Emitter Turn-On Voltage (Note 12) VBE(on) -- 960 1,050 mV IC = 5A, VCE = 2V 100 90 45 300 -- -- -- -- -- 200 180 90 20 IC = 10mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 50V IC = 5A, VCE = 5V fT -- 185 -- MHz IC = 100mA, VCE = 5V f=100MHz Cobo -- 11.5 20 pF Delay Time td -- 16 -- ns Rise Time tr -- 15 -- ns Storage Time ts -- 509 -- ns Fall Time tf -- 57 -- ns DC Current Gain (Note 12) Transitional Frequency Output Capacitance Note: hFE VCB= 10V, f=1MHz VCC = 10V, ICC = 500mA IB1 = - IB2 = 50mA 12. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTN25060BZQ Document number: DS38348 Rev. 1 - 2 5 of 8 www.diodes.com October 2015 (c) Diodes Incorporated ZXTN25060BZQ Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 0.5 Tamb=25C IC/IB=10 0.4 100m IC/IB=50 IC/IB=20 VCE(SAT) (V) VCE(SAT) (V) IC/IB=100 0.3 150C 100C 0.2 25C 0.1 IC/IB=10 10m 1m 10m 100m 1 IC Collector Current (A) 0.0 10m 10 1.0 25C 0.6 0.4 -55C 0.2 0.0 1m 10m 100m 1 10 IC/IB=10 25C 0.8 0.6 100C 150C 0.4 1m IC Collector Current (A) hFE v IC 1.0 VCE=2V 10 -55C 1.0 VBE(SAT) (V) 100C 325 300 275 250 225 200 175 150 125 100 75 50 25 0 Typical Gain (hFE) Normalised Gain 1.4 0.8 IC Collector Current (A) 1.2 375 VCE=2V 350 150C 1.2 1 VCE(SAT) v IC VCE(SAT) v IC 1.6 -55C 100m 10m 100m 1 IC Collector Current (A) 10 VBE(SAT) v IC -55C 25C VBE(ON) (V) 0.8 0.6 100C 0.4 150C 0.2 1m 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC ZXTN25060BZQ Document number: DS38348 Rev. 1 - 2 6 of 8 www.diodes.com October 2015 (c) Diodes Incorporated ZXTN25060BZQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D1 0 .20 c R0 SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.327 0.527 0.427 z 0.20 0.40 0.30 All Dimensions in mm H E B1 L B e D2 8 (4 X) H1 E2 A L1 D z Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Dimensions Y3 Y1 Y4 X Y G Y2 C G X X1 X2 Y Y1 Y2 Y3 Y4 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 X1 C ZXTN25060BZQ Document number: DS38348 Rev. 1 - 2 7 of 8 www.diodes.com October 2015 (c) Diodes Incorporated ZXTN25060BZQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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