POWER: MOS [F a | | FIELD EFFECT POWER TRANSISTOR IRF630,631 D84DN2,M2 9.0 AMPERES 200, 150 VOLTS RDS(ON) = 0.40 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear N-CHANNEL CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) sae . . . -404(10.26) 62 .190(4.83) transfer characteristics makes it well suited for many linear [rss TP 72S Le SEB applications such as audio amplifiers and servo motors. C7 co reseoa| TF -245(6.22} . CASE Features . y TEMPERATURE /\ | t point Polysilicon gate Improved stability and reliability 1858 08g, i 355(9.02) wok so No secondary breakdown Excellent ruggedness k _ y do 99g +] | | 1303.3) oe 0510-18) e Ultra-fast switching Independent of temperature i FF . TERM! -600(12.7)MiN. Voltage controlled High transconductance TERM2 08611.39 Saat e Low input capacitance Reduced drive requirement TERMS | 4 vps . 033(0.84) -105(2.67) 4} fy 10712.72) e Excellent thermal stability Ease of paralleling e ) fe eat rae een sai] h Sagem ess UNIT TYPE |TERM.ATERM.2| TERM.3 TAB POWER MOS FET|TO0-220-AB] GATE | DRAIN; SOURCE] ORAIN maximum ratings (Tc = 25 C) (unless otherwise specified) RATING SYMBOL IRF630/D84DN2 IRF631/D84DM2 UNITS Drain-Source Voltage Voss 200 150 Volts Drain-Gate Voltage, Ras = 1M. VDGR 200 150 Volts Continuous Drain Current @ Tc = 25C Ip 9.0 9.0 A @ To = 100C 6.0 6.0 A Pulsed Drain Current Ibm 36 36 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 W/C Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Rasa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 197 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF630/D84DN2 BVpss 200 _ _ Volts (Ves = OV, Ip = 250 WA) {RF631/D84DM2 150 _ Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Ves = OV, To = 25C) _ _ 250 LA (Vps = Max Rating, x 0.8, Vas = OV, To = 125C) - _ 1000 Oe woo ee Current loss _ _ +500 nA on characteristics Gate Threshold Voltage To = 25C | Vascth) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 pA) On-State Drain Current | 9.0 _ _ A (V@s = 10V, Vps = 10V) BION) ~ Static Drain-Source On-State Resistance (Vag = 10V, Ip = 5.0A) RDS(ON) 0.34 0.4 Ohms Forward Transconductance _ (Vpg = 10V, Ip = 5.0A) Ots 2.4 3.0 mhos dynamic characteristics Input Capacitance Vas = 0V Ciss _ 650 800 pF Output Capacitance Vps = 25V Coss _ 150 450 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 30 150 pF switching characteristics Turn-on Delay Time Vps = 90V ta(on) _ 15 _ ns . Rise Time Ip = 5.0A, Vag = 15V tr _ 25 _ ns Turn-off Delay Time Rgen = 500, Ras = 12.50 | ta(off) _ 30 ns Fall Time (Res (Equiv.) = 109) tr _ 20 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 9.0 A Pulsed Source Current Ism _ _ 36.0 A Diode Forward Voltage _ 1 (To = 25C, Vag = OV, Ig = 9.0A) Vsp 0 2.0 Volts Reverse Recovery Time ter _ 300 = ns (Ig = 9.0A, dlg/dt = 100A/usec, Tc = 125C) QrrR _ 2.5 uC *Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 80 60 40 20 2-200 Nn RA IN THIS AREA MAY BE LIMITED BY R 1g, DRAIN CURRENT (AMPERES} gS 99> + awe 0.1 1 2 4 6 810 20 40 60 80100 Vpg, ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 CONDITIONS: Rog(on) CONDITIONS: Ip = 5.0 A, Vag = 10V V@g(TH) CONDITIONS: Ip = 260uA, Vg = Vag GSITH) Rosion) AND Vggern) NORMALIZED ~40 0 40 80 Ty, JUNCTION TEMPERATURE (c) TYPICAL NORMALIZED Rogion; AND Vagitn) VS- TEMP. 120 160 198