AP22T03GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free G BVDSS 30V RDS(ON) 33m ID 15.6A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current 15.6 A ID@TC=70 Continuous Drain Current 9.8 A 50 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 12.5 W PD@TA=25 Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice 3 Value Units 10 /W 62.5 /W 1 200912221 AP22T03GH-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=12A - - 33 m VGS=4.5V, ID=8A - - 60 m V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 VDS=10V, ID=12A - 8.5 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=8A - 4 6.4 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.3 - nC 2 td(on) Turn-on Delay Time VDS=15V - 6 - ns tr Rise Time ID=8A - 23 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 13 - ns tf Fall Time RD=1.88 - 3 - ns Ciss Input Capacitance VGS=0V - 280 448 pF Coss Output Capacitance VDS=25V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. IS=12A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=8A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP22T03GH-HF 50 40 10V 7.0V o T C =25 C 10V 7.0V o T C =150 C 6.0V ID , Drain Current (A) ID , Drain Current (A) 40 30 5.0V 20 V G = 4.0 V 6.0V 30 5.0V 20 V G =4.0V 10 10 0 0 0 2 4 6 8 0 V DS , Drain-to-Source Voltage (V) 4 6 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 60 I D =12A V G =10V I D =8A T C =25 o C Normalized RDS(ON) 50 RDS(ON) (m) 2 40 1.6 1.2 0.8 30 0.4 20 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 12 Normalized VGS(th) (V) 10 IS(A) 8 T j =150 o C T j =25 o C 6 4 1.2 0.8 0.4 2 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP22T03GH-HF 10 f=1.0MHz 500 VGS , Gate to Source Voltage (V) I D =8A V DS =24V 8 C (pF) 400 6 300 C iss 4 200 2 100 C oss C rss 0 0 0 2 4 6 1 8 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 Operation in this area limited by RDS(ON) ID (A) 10 100us 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse 0 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x R thjc + T c 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4