IRFWZ34/30 N-CHANNEL IRFIZ34/30 POWER MOSFETS FEATURES PAK Lower Ros(on) Improved Inductive Ruggedness * Fast switching times * Rugged polysilicon gate cell structure * Lower input capacitance Extended safe operating area + Improved high temperature reliability 1. Gate 2. Drain 3. Source IRFWZ34/30 P-PAK PRODUCT SUMMARY Part Number BVoss Rosen) Ip IRFW2Z34/1Z34 60 0.050 30A IRWZ30/1Z30 50 0.050 30A 1. Gate 2. Drain 3. Source {RFIZ34/30 ABSOLUTE MAXIMUM RATINGS a IRFWZ34 IRFWZ30 5 Characteristic Symbol IRFIZ34 IRFIZ30 Unit Drain-Source Voltage (1) Vbss 60 50 Vde Drain-Gate Voltage (Ras=1Mf )(1) Voar 60 50 Vde Gate-Source Voltage Vas +20 Adc Continuous Drain Current Tc=25 C lo 30 Adc Continuous Drain Current Tc=100 C ID 21 Adc Drain Current - Pulsed (3) IDM 120 Adc Single Pulsed Avalanche Energy (4) Eas 200 mJ Avalanche Current las 30 A Total Power Dissipation Tc=25 C P 88 Watts D Derate Above 25 C 0.7 W/C Operating and Stora Perating 9 Tu, Tst@ -55 to +175 C Junction Temperature Range Maximum Lead Temp. for Soldering Tu 300 C Purposes, 1/8" from case for 5 seconds Notes : (1) Ti=25C to 175C (2) Pulse test : Pulse width <300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature (4) L= 259#H, Vad=25V, Re=250 , Starting Ti=25C ELECTRONICS ME 7964142 0029537 70] eS IRFWZ34/30 N-CHANNEL IRFIZ34/30 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min| Typ | Max | Units Test Conditions BVoss | Drain-Source Breakdown Voltage IRFW2Z34/Z34 60 - - Ve} Vas=0V, Ip=2502A IRFWZ30/IZ30 50 - - V Vestn) | Gate Threshold Voltage 2.0 - 40 V_ | Vos=Ves, ln=2500A Iess_| Gate-Source Leakage Forward - - 100 | nA | Ves=20V lass Gate-Source Leakage Reverse - - -100} nA | Vas=-20V Ipss Zero Gate Voltage Drain Current - - 250 | #A | Vps=Max. Rating, Vas=0V - - | 1000) #A | Vpos=0.8 Max. Rating, Ves=0V, Tc=150C Rosion) | Static Drain-Source On Resistance(2) - - 0.05 | Q | Vas=10V, ID=15A Qfs Forward Transconductance (2) 9.3 . - Us| Vas=50V, ID=15A Ciss Input Capacitance - | 1300 - pF Coss | Output Capacitance - | 650 - pF | Vas=0V, Vos=25V, f=1MHz Crss Reverse Transfer Capacitance - 100 - pF talon) Turn-On Delay Time - - 21 ns | Vop=0.5 BVoss, ID=30A, Zo=180 tr Rise Time - - 100 | ns | (MOSFET switching times are essentially tdof) | Turn-Off Delay Time - - 53 ns | independent of operating temperature) tf Fall Time - - 80 ns Qg Total Gate Charge - - 47 | nC | Vas=10V, Vos=30A, Vos=0.8 Max. Rating (Gate-Source Plus Gate-Drain) (Gate charge is essentially independent of Qos Gate-Source Charge - 10 - nC | operating temperature) Qgq Gate-Drain ("Miller") Charge - 22 - nc THERMAL RESISTANCE Symbol Characteristics All Units Remark Rthuc Junction-to-Case MAX 1.7 KAW Rthua Junction-to-Ambient MAX 62.5 K/W | Free Air Operation Notes : (1) Tu=25C to 175C (2) Pulse test : Pulse width<300us, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature en ELECTRONICS 999 Me 796442 0029538 b48 IRFWZ34/30 N-CHANNEL IRFIZ34/30 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min | Typ | Max | Units Test Conditions Continuous Source Current ls muons wouweue - | - | 30 | A | Modified MOSFET 5 (Body Diode) symbol showing the Pulse Source Current integral reverse Ss s ism ; - - | 120 | A | P-N junction rectifier (Body Diode) (3) Vsp | Diode Forward Voltage (2) - - 1.6 Vs | Tus25C, Is=30A, Ves=0V ter Reverse Recovery Time - - 220 | ns | Ty=25C, IF=30A, dir/dt=100A/eS Notes : (1) Tu=25C to175C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. Junction temperature ELECTRONICS Me 7964342 0029539 584