MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 Features High Voltage l Through Hole Package l 150oC Junction Temperature l Voltage and Current are negative for PNP transistors Transistor 625mW Pin Configuration Bottom View C B E TO-92 A Mechanical Data E l Case: TO-92, Molded Plastic B l Polarity: indicated as above. Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Emitter Voltage 2N6515 2N6519 2N6517, 2N6520 Collector-Base Voltage 2N6515 2N6519 2N6517, 2N6520 Emitter-Base Voltage 2N6515-6517 2N6519-6520 VCEO VCBO Value 250 300 350 250 300 350 V V D VEBO 6.0 5.0 V Base Current IB 250 mA Collector Current(DC) IC 500 625 5.0 1.5 12 mA W o mW/ C W o mW/ C o Power Dissipation@TA=25 C Pd Power Dissipation@TC=25o C Pd Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature C Unit RJA 200 o RJC 83.3 o Tj, TSTG -55~150 C/W C/W o C G DIMENSIONS DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 www.mccsemi.com MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 250 300 350 -- -- -- 250 300 350 -- -- -- 6.0 5.0 -- -- -- -- -- 50 50 50 -- -- 50 50 2N6515 2N6519 2N6517, 2N6520 35 30 20 -- -- -- (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 -- -- -- (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 50 45 30 300 270 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 45 40 20 220 200 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 25 20 15 -- -- -- -- -- -- -- 0.30 0.35 0.50 1.0 -- -- -- 0.75 0.85 0.90 -- 2.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 Vdc V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6519 2N6517, 2N6520 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6519, 2N6520 Vdc ICBO nAdc IEBO nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.mccsemi.com -- Vdc Vdc Vdc MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit fT 40 200 MHz Ccb -- 6.0 pF -- -- 80 100 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6519, 2N6520 pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton -- 200 s Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff -- 3.5 s 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.mccsemi.com MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515 VCE = 10 V 2N6519 200 TJ = 125C 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25C 70 -55C 50 30 20 1.0 VCE = -10 V TJ = 125C 25C 100 70 -55C 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 1. DC Current Gain 2N6517 VCE = 10 V 100 2N6520 200 TJ = 125C VCE = -10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 25C 70 50 -55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 25C 70 -55C 50 30 20 10 -1.0 50 70 100 TJ = 125C 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 2N6515, 2N6517 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 2N6519, 2N6520 100 70 50 TJ = 25C VCE = -20 V f = 20 MHz 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 3. Current-Gain -- Bandwidth Product www.mccsemi.com -50 -70 -100 MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515, 2N6517 1.4 2N6519, 2N6520 -1.4 TJ = 25C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 2.0 TJ = 25C 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 0 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 4. "On" Voltages IC 10 IB 2.0 1.5 1.0 0.5 0 25C to 125C RVC for VCE(sat) -55C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 2N6519, 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) RV, TEMPERATURE COEFFICIENTS (mV/C) 2N6515, 2N6517 2.5 -55C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 2.5 IC 10 IB 2.0 1.5 25C to 125C 1.0 0.5 0 RVB for VBE -55C to 25C -0.5 -1.0 -1.5 -2.0 RVC for VCE(sat) -2.5 -1.0 -55C to 125C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Temperature Coefficients 2N6515, 2N6517 2N6519, 2N6520 TJ = 25C Ceb 30 20 10 7.0 5.0 Ccb 3.0 2.0 1.0 0.2 100 70 50 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 70 50 Ceb TJ = 25C 30 20 10 7.0 5.0 Ccb 3.0 2.0 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 1.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance www.mccsemi.com -100 -200 MCC NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN PNP 2N6515, 2N6517 1.0k 700 500 200 tr 100 70 50 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 tr 200 20 10 1.0 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 t, TIME (ns) t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 2N6519, 2N6520 1.0k 700 500 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 7. Turn-On Time 2N6515, 2N6517 10k 7.0k 5.0k 2N6519, 2N6520 2.0k t, TIME (ns) 3.0k 500 2.0k 1.0k 700 500 tf tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 100 70 50 300 200 100 1.0 ts 1.0k 700 ts VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 8. Turn-Off Time www.mccsemi.com -50 -70 -100