Features
l Through Hole Package
l 150oC Junction Temperature
l Voltage and Current are negative for PNP transistors
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage 2N6515
2N6519
2N6517, 2N6520
VCEO
250
300
350
V
Collector-Base Voltage 2N6515
2N6519
2N6517, 2N6520
VCBO
250
300
350
V
Emitter-Base Voltage 2N6515-6517
2N6519-6520 VEBO 6.0
5.0 V
Base Current IB 250 mA
Collector Current(DC) IC 500 mA
Power Dissipation@TA=25oC Pd625
5.0 W
mW/
o
C
Power Dissipation@TC=25oC Pd1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air
200 oC/W
Thermal Resistance, Junction to Case 83.3 oC/W
Operating & Storage Temperature Tj, TSTG -55~150 oC
NPN
2N6515, 2N6517
PNP
2N6519, 2N6520
High Voltage
Transistor
625mW
Pin Configuration
Bottom View CB E
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.175 .185 4.45 4.70
B.175 .185 4.46 4.70
C.500 --- 12.7 ---
D.016 .020 0.41 0.63
E.135 .145 3.43 3.68
G.095 .105 2.42 2.67
A
E
B
C
D
G
DIMENSIONS
TO-92
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MCC
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MCC
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0) 2N6515
(VCB = 200 Vdc, IE = 0) 2N6519
(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520
ICBO —
—
—
50
50
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0) 2N6519, 2N6520
IEBO —
—50
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
(IC = 100 mAdc, V CE = 10 Vdc) 2N6515
2N6519
2N6517, 2N6520
hFE 35
30
20
50
45
30
50
45
30
45
40
20
25
20
15
—
—
—
—
—
—
300
270
200
220
200
200
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat) —
—
—
—
0.30
0.35
0.50
1.0
Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat) —
—
—
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, V CE = 10 Vdc) VBE(on) — 2.0 Vdc
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0 ) 2N6515
2N6519
2N6517, 2N6520
V(BR)CEO 250
300
350
—
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 ) 2N6515
2N6519
2N6517, 2N6520
V(BR)CBO 250
300
350
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0) 2N6515, 2N6517
2N6519, 2N6520
V(BR)EBO 6.0
5.0 —
—
Vdc
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
NPN 2N6515 2N6517
PNP 2N6519 2N6520
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb — 6.0 pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517
2N6519, 2N6520
Ceb —
—80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton — 200 µs
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff — 3.5 µs
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
NPN 2N6515 2N6517
PNP 2N6519 2N6520 MCC
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Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
hFE, DC CURRENT GAIN
200
100
20
30
50
70
VCE = 10 V TJ = 125°C
25°C
-55°C
2N6515
NPN
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
hFE, DC CURRENT GAIN
200
100
20
30
50
70
VCE = -10 V TJ = 125°C
25°C
-55°C
2N6519
PNP
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
200
100
10
20
50
70
VCE = 10 V TJ = 125°C
25°C
-55°C
2N6517
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
VCE = -10 V
TJ = 125°C
25°C
-55°C
2N6520
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
100
20
30
50
70
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
2N6519, 2N6520
f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)
T
f, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)
T
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10
100
20
30
50
70
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
TJ = 25°C
VCE = -20 V
f = 20 MHz
30
200
100
10
20
50
70
30
NPN 2N6515 2N6517
PNP 2N6519 2N6520 MCC
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Figure 4. “On” Voltages
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
V, VOLTAGE (VOLTS)
1.4
1.2
0
0.6
0.8
1.0
2N6515, 2N6517
NPN
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
2N6519, 2N6520
PNP
Figure 5. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.5
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
2N6519, 2N6520
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
100
2.0
3.0
5.0
70
2N6515, 2N6517
VR, REVERSE VOLTAGE (VOLTS)
2N6519, 2N6520
C, CAPACITANCE (pF)
1.0
V, VOLTAGE (VOLTS)
0.4
0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
-1.4
-1.2
0
-0.6
-0.8
-1.0
-0.4
-0.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
RV, TEMPERATURE COEFFICIENTS (mV/ C)°
θ
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
RθVC for VCE(sat)
RθVB for VBE
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
IC
IB 10
RθVC for VCE(sat)
RθVB for VBE
25°C to 125°C
-55°C to 25°C
-55°C to 125°C
IC
IB 10
C, CAPACITANCE (pF)
7.0
10
20
30
50
-200-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
TJ = 25°C TJ = 25°C
Ccb
Ceb
Ccb
Ceb
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
100
2.0
3.0
5.0
70
1.0
7.0
10
20
30
50
NPN 2N6515 2N6517
PNP 2N6519 2N6520 MCC
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Figure 7. Turn–On Time
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
t, TIME (ns)
1.0k
20
10
2N6515, 2N6517
NPN
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
2N6519, 2N6520
PNP
Figure 8. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
-100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70
2N6519, 2N6520
30
50
70
100
200
300
500
700
t, TIME (ns)
td @ VBE(off) = 2.0 V
tr
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25°C
td @ VBE(off) = 2.0 V
tr
VCE(off) = -100 V
IC/IB = 5.0
TJ = 25°C
t, TIME (ns)
10k
100
200
300
500
700
1.0k
2.0k
3.0k
5.0k
7.0k
20
30
50
70
100
200
300
500
700
1.0k
2.0k
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
VCE(off) = -100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
ts
tf
ts
tf
1.0k
20
10
30
50
70
100
200
300
500
700
NPN 2N6515 2N6517
PNP 2N6519 2N6520 MCC