APTDF100H100G Diode Full Bridge Power Module VRRM = 1000V IC = 100A @ Tc = 70C Application + AC1 * * * * AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration * Benefits * - * * * * * * AC1 Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Duty cycle = 50% TC = 25C TC = 70C TC = 45C TC = 45C Max ratings Unit 1000 V 130 100 130 500 A June, 2006 + Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF100H100G - Rev 1 AC2 APTDF100H100G All ratings @ Tj = 25C unless otherwise specified Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 100A IF = 150A IF = 100A Tj = 125C Tj = 25C VR = 1000V Tj = 125C IF = 100A VR = 667V di/dt = 200A/s IF = 100A VR = 667V di/dt=1000A/s Min Typ Tj = 25C 45 Tj = 25C Tj = 125C Tj = 25C 290 340 685 Tj = 125C Tj = 25C 3645 6 Tj = 125C 18 Tj = 125C Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 To Heatsink M5 Unit V A pF Max Unit ns ns nC A 160 ns 7100 nC 70 A Typ Max 0.55 175 125 100 4.7 160 Unit C/W V C N.m g June, 2006 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Max 2.7 120 Test Conditions IF=1A,VR=30V di/dt = 100A/s Typ 2.1 2.3 1.7 100 500 VR = 1000V Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Min www.microsemi.com 2-4 APTDF100H100G - Rev 1 Electrical Characteristics APTDF100H100G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) T J=175C 250 200 T J=125C 150 100 TJ=-55C 50 T J=25C 0 0.0 0.5 1.0 1.5 2.0 2.5 400 T J=125C V R=667V 350 300 250 150 A 200 100 A 150 50 A 100 50 0 0 3.0 200 400 TJ=125C VR=667V 8 150 A 7 100 A 6 5 50 A 4 3 2 0 200 400 600 800 -diF/dt (A/s) 1000 1200 T J=125C VR=667V 70 100 A 150 A 60 50 A 50 40 30 20 10 0 200 400 600 800 1000 1200 Max. Average Forward Current vs. Case Temp. 150 700 Duty Cycle = 0.5 T J=175C 125 600 400 300 100 June, 2006 500 IF(AV) (A) C, Capacitance (pF) 80 -diF/dt (A/s) Capacitance vs. Reverse Voltage 800 800 1000 1200 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 9 600 -diF/dt (A/s) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (C) VF, Anode to Cathode Voltage (V) 75 50 200 25 100 0 0 1 10 100 V R, Reverse Voltage (V) 1000 0 25 50 75 100 125 150 175 Case Temperature (C) www.microsemi.com 3-4 APTDF100H100G - Rev 1 IF, Forward Current (A) 300 APTDF100H100G SP4 Package outline (dimensions in mm) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H100G - Rev 1 June, 2006 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :