4N3 5, 3 6, 3 7( Sh ort) GaAs IRED & PHOTO-TRANSISTOR (4N35(Shart)) AC LINE/ DIGITAL LOGIC ISOLATOR. Unit in mm DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. RELAY CONTACT MONITOR. lo q D 64a a The TOSHIBA 4N35 (Short) through 4N37 (Short) consists of a gallium ezaze aeesaes arsenide infrared emitting diode coupled with a silicon : + phototransistor in a dual in-line package. e Switching Speeds : Bus Typ. e DC Current Transfer Ratio : 100% Min. Isolation Resistance : 10''Q Min. e Isolation Voltage : 2500Vrms Min. JEDEC _ UL Recognized : UL1577, File No. E67349 EIAJ _ TOSHIBA 11-7Al Weight : 0.4g PIN CONFIGURATIONS (TOP VIEW) 1 6 PEN Lips 30 4 : ANODE : CATHODE : NC : EMITTER : COLLECTOR : BASE an PF & NH =4N35, 36, 37(Short) {4N35(Short)) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Continuous) Ip 60 mA Forward Current Derating Alp /C 0.8* mA /C a Peak Forward Current (Note) IpF 3 A | Power Dissipation Pp 100 mW Power Dissipation Derating 4Pp/C 1.33* mW /C Reverse Voltage VR 6 v ge |Collector-Emitter Voltage BVCEO 30 Vv z Collector-Base Voltage BVcBO 70 Vv | Emitter-Collector Voltage BVECO 7 Vv . Collector Current (Continuous) Iq 100 mA A Power Dissipation PC 300 mW Power Dissipation Derating 4P/C 4.0* mW /C Storage Temperature Tstg -55~150 C Operating Temperature Topr 55~100 C a Lead Soldering Temperature (at 10 sec.) Tsold 260 C : Total Package Power Dissipation Pr 300 mW '5 |Total Package Power Dissipation Derating 4Pp/C 3.3* mW /C BVs 2500 Vrms Input to Output Isolation Voltage 4N35 2500/3550 (AC, 1 Minute) 4N36 BVs** 1750/2500 |Vrms/Vpk 4N37 1050/1500 Note : Pulse width lzs, 300pps * Above 25C ambient. ** JEDEC registered maximum BVsg, however, TOSHIBA specifies a maxium BVg of 2500Vrms, 1 minute.4N35, 36, 37(Short) (4N35(Short}) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Ip=10mA 0.8 | 1.15 1.5 q | Forward Voltage VE Ip=10mA, Ta= 55C 09 | 17 Vv a Ip=10mA, Ta= 100C 0.7 | ~ 1.4 Reverse Current IR VRp=6v = 10 | wA Capacitance Cp V=0, f=1MHz _ 30 | 100 pF DC Forward Current Gain her VoE=5V, I =500-A 200 | _ Collector-Emitter oe Breakdown Voltage V(BR)CEO| Ic=10mA 30 ~ ~ Vv | Collector-Base Breakdown _ =| Voltage V(BR)CBO| Ic = 100A 70 _ Vv o tq | Emitter-Collector _ a Breakdown Voltage V(BRJECO| Te =100/A 3 ~ ~~ Vv a |Collector Dark Current IcEO VcE=10V 1 50 | nA Collector Dark Current IcEO VoRr=30V, Ta=100C 500 | vA Collector-Emitter Capacitance CCE V=0, f=1MHz 10] | pF Ip=10mA, Vop=10V 100 _ _ Ip=10mA, VcE=10V 40 Current Transfer Ratio Ic /Ip Ta= 55C ~~ ~ % Ip=10mA, VoR=10V 40 Ta =100C ~~ | A | Collector-Emitter Fa Saturation Voltage VCR(sat) | Lr=10mA, I=0.5mA 0.1 | 0.3 Vv AIC it Input 5 Output ance Input to Cs Vg=0, f=1MHz | o8| 25 | pF 3S O Isolation Resistance Rg Vg=500V, R.H. 5 60% you | _ Q Input to Output 4N35 Vig =3550V pk = _ 100 Isolation Current 4N36 | lo Vio = 2500Vpk _ 100 | wA (Pulse Widtn =8ms)) 4n37 Vio = 1500Vpk | | 100 Turn-on Time ton Vec=10V, Ic=2mA _ 3 10 FS Turn-off Time toff Ry = 1002 = 3 io | 4N35, 36, 37(Short) (4N35(Short)) Pc - Ta 600 400 mA} (mW) Ip DISSIPATION Pc ALLOWABLE FORWARD CURRENT ALLOWABLE COLLECTOR POWER 0 0 -20 0 20 40 60 80 100 120 -2 0 20 40 ~~ 60 Bo 100 ~=:120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Irp DR th VF 4 PULSE WIDTHS Lys Ta =25C & Ta =25C 3 g & & s 2 2 2 o 4 Q 5 & Co = 2 om < 2 = fe fe [oy 4 2 ay 10-3 10-2 19-1 10 06 0.8 1.0 12 14 16 18 DUTY CYCLE RATIO Dg FORWARD VOLTAGE Vp (V) AVE/ATa IF Ipp VFp 1000 = 2. Z St Be 300 > BE = Be =a & 100 Ba ne 50 o3 S30 & Se a Ox, < > al = L jars) e - aE S PULSE WIDTH 10us zi a REPETITIVE FREQUENCY 3 eo 5 =100H2 Ta =26C F 1 01 0.3 1 a 10 30 0.6 1.0 14 L8 2.2 2.6 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vpp (V)4N35, 36, 37(Short) (4N35(Short)) Ta=25C Vor= lov weer VoE=0.4V < E 2 9 SAMPLE A me 5 2 o es oO & o i ~ 2 o Oo 1 3 10 FORWARD CURRENT Ip Ic - Ta 300 -Ip=50mA 100 < 2 a 1 5 o 5 5 ec 3 oO Sy a 3 oS 1 0.5 0.3 O41 ~60 -46 -20 0 20 40 30 (mA) Vc =10V 60 80 AMBIENT TEMPERATURE Ta (C) (%) ig /Ip CURRENT TRANSFER RATIO (mA) Ic COLLECTOR CURRENT (Vv) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) Ic/IF - Ir Ta=25C Vce=10V --+- Vop=0.4V SAMPLE A 200 ~ SAMPLE B 1 3 10 30 190 300 FORWARD CURRENT Ip (mA) Ic - VCE 20 Ta =25C 0 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE VoE () VCE(sat) Ta Ip=10mA 04 Ic=0.5mA 0.5 2 2 2 a 2 o e 0.01 -60 -40 -20 06 20 40 60 80-100 AMBIENT TEMPERATURE Ta (C)4N35, 36, 37(Short) (4N35(Short)} ICEO RBE 2 10 2 s| Vce=24v S 3| Ta=100C < E $ ZC o = 06 3 B oal- - : & g Sol % oe 5 S 0.05 e = 0.03 mm = x 3 a 35 ea 0.01 100k 1M 10M o 5 == Q BASE-EMITTER RESISTANCE Rpg (0) 5 SWITCHING CHARACTERISTICS Rpg Ta=25C Yoc=5 Ip ox 4.3kn 1 0 20 40 60 30 00 120 & AMBIENT TEMPERATURE Ta (C) SWITCHING CHARACTERISTICS Ru - a 3 Voc =5 Ip=5mA Your 100 g = 50 o = 30 = n & 10 coy = B o 3 r G & = 1 in aM IM 300 100 30 10k BASE-EMITTER RESISTANCE Rgg (0) 0.5 1 3 10 30 LOAD RESISTANCE Ry, (kQ)