DCB010
No.1895-1/3
Features
•Ideally suited for use in hybrid ICs because of very small-sized package.
•Fast switching speed.
•Small interterminal capacitance.
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter Symbol Conditions Ratings Unit
Peak Reverse Voltage VRM 85 V
Reverse Voltage VR80 V
Peak Forward Current IFM 300 mA
IFM*450 mA
Average Rectified Current IO100 mA
IO*150 mA
Surge Current (1μs) IFSM 4A
IFSM*6A
Allowable Power Dissipation P 200 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg --55 to +125 °C
*
: Total value
Electrical Characteristics at Tc=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
VF1 IF=1mA 0.60 V
Forward Voltage VF2 IF=10mA 0.72 V
VF3 IF=100mA 1.20 V
Reverse Current IR1 VR=30V 0.1 μA
IR2 VR=80V 0.5 μA
Marking: W6 Continued on next page.
SANYO Semiconductors
DATA SHEET
Ordering number : EN1895C
41509DH MS IM TC-00001938 / N0106 / 12000 GI IM / 2279TA, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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DCB010 Silicon Epitaxial Planar Type (Cathode Common)
Very High-Speed Switching Diode
DCB010
No.1895-2/3
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Interterminal Capacitance C VR=0V, f=1MHz 3.0 pF
Reverse Recovery Time trr IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp 4.0 ns
Package Dimensions Electrical Connection
unit : mm (typ)
7013A-006
Reverse Recovery Time Test Circuit
1 : Anode
2 : Anode
3 : Cathode
SANYO : CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
1 : Anode
2 : Anode
3 : Cathode
Top view
3
21
DUT
50Ω
0.01μF
2kΩ50Ω
50ns
--6V
0IF=10mA 0.1Irp
trr
Irp
Reverse Voltage, VR -- V
IR -- VR
Reverse Current, IR -- μA
Forward Voltage, VF -- V
IF -- VF
Forward Current, IF -- mA
IT02037 IT02038
2
5
10
--2
10
--1
2
5
1.0
10
2
5
2
5
10
2
2
5
10
3
0 0.2 0.4 0.6 0.8 1.0 1.2
Ta=100°C
25°C
--25
°
C
2
5
10
--3
10
--2
2
5
10
--1
2
5
2
5
10
1.0
0 20406080100
Ta=100
°
C
75
°
C
50
°
C
25
°
C
DCB010
No.1895-3/3
PS
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
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This catalog provides information as of April, 2009. Specifications and information herein are subject
to change without notice.
Reverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
Reverse Recovery Time, trr -- ns
Forward Current, IF -- mA
trr -- IF
IT02039 IT02040
10
3
5
5
2
7
7
1.0
2
3
5
7
100
0.1 3521.0 35210 100
352
0.4
0
0.8
1.2
1.6
2.0
2.4
1.0 23 5
0.1 23 5 10 100
23 5 2
f=1MHz
