LESHAN RADIO COMPANY, LTD. Switching Diode This switching diode has the following features: * Low Leakage Current Applications * Medium Speed Switching Times BAS116LT1 * Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel 3 Use BAS116LT3 to order the 13 inch/10,000 unit reel 3 CATHODE 1 1 ANODE 2 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current CASE 318-08, STYLE 8 SOT-23 (TO-236AB) Symbol Value Unit VR IF 75 200 500 Vdc mAdc mAdc I FM(surge) DEVICE MARKING BAS116LT1 = JV THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RJA PD 1.8 556 300 mW/C C/W mW RJA TJ , Tstg 2.4 417 -55 to +150 mW/C C/W C ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol Min Max Unit IR -- -- 5.0 80 nAdc V (BR) 75 -- Vdc VF 900 1000 1100 1250 2.0 mV CD -- -- -- -- -- t rr -- 3.0 s OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 75 Vdc ) (V R = 75 Vdc , T J =150C) Reverse Breakdown Voltage (I BR = 100 Adc) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Diode Capacitance(V R = 0, f = 1.0 MHz) Reverse Recovery Time (I F = I R = 10mAdc, )( Figure 1) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. pF G4-1/2 LESHAN RADIO COMPANY, LTD. BAS116LT1 +10 V 2.0 k 820 100 H 0.1 F 50 OUTPUT PULSE GENERATOR tr 0.1F IF t p t IF t rr 10% t 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE i INPUT SIGNAL VR IR R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p t rr Figure 1. Recovery Time Equivalent Test Circuit G4-2/2