SFH 221
Silizium-Differential-Fotodiode
Silicon Differential Photodiode
Lead (Pb) Free Product - RoHS Compliant
2007-04-03 1
Wesentliche Merkmale
Speziell geeignet für Anwendunge n im Bereich
von 400 nm bis 1100 nm
Hohe Fotoempfindlichkeit
Hermetisch dichte Metallbauform (ähnlich
TO-5), geeignet bis 125 °C1)
Doppeldiode von extrem hoher
Gleichmäβigkeit
Anwendungen
Nachlaufsteuerungen
Kantenführung
Industrieelektronik
„Messen/Steuern/Regeln“
1) Eine Abstimmung der Einsatzbedingungen mit dem
Hersteller wird empfohlen bei TA > 85 °C
1) For operating conditions of TA > 85 °C please contact
us.
Typ
Type Bestellnummer
Ordering Code
SFH 221 Q62702P0270
Features
Especially suitable for applications from
400 nm to 1100 nm
High photosensitivity
Hermetically sealed metal package (similar to
TO-5), suitable up to 125 °C1)
Double diode with extremely high
homogeneousness
Applications
Follow-up controls
Edge drives
Industrial electronics
For control and drive circuits
2007-04-03 2
SFH 221
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg 40 … + 125 °C
Sperrspannung
Reverse voltage VR10 V
Isolationsspannung gegen Gehäuse
Insulation voltage vs. package VIS 100 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 50 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) für jede Einzeldiode
Characteristics (TA = 25 °C, standard light A, T = 2856 K) per single diode
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
Spectr al sensitivity S24 (15) nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sensitivity
S = 10% of Smax
λ4001100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A1.54 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L × B
L × W0.7 × 2.2 mm²
Halbwinkel
Half angle ϕ ± 55 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR10 ( 100) nA
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectr al sensitivity Sλ0.55 A/W
SFH 221
2007-04-03 3
Maximale Abweichung der Fotoempfindlichkeit
vom Mittelwert
Max. deviation of the system spectral sensitivity
from the average
ΔS± 5 %
Quantenausbeute, λ = 850 nm
Quantum yield η0.80 Electrons
Photon
Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage VO330 (280) mV
Kurzschluβstrom, Ev = 1000 Ix
Short-circuit current ISC 24 μA
Isolationsstrom, VIS = 100 V
Insulation current IIS 0.1 (1) nA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 25 μA
tr, tf500 ns
Durchlaβspannung, IF = 40 mA, E = 0
Forward voltage VF1.0 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C025 pF
Temperaturkoeffizient für VO
Temperature coefficient of VO
TCV2.6 mV/K
Temperaturkoeffizient für ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 1.0 × 10–13
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 1.2 × 1012
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) für jede Einzeldiode
Characteristics (TA = 25 °C, standard light A, T = 2856 K) per single diode (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
SFH 221
2007-04-03 4 OPTO SEMICONDUCTORS
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Characteristics
Srel = f (ϕ)
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit-Voltage VL = f (Ev)
Capacitance
C = f (VR), f = 1 MHz, E = 0
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 1 V, E = 0
SFH 221
2007-04-03 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2.0 (0.079)
Chip position
3.4 (0.134)
3.0 (0.118)
0.3 (0.012) max
14.5 (0.571)
12.5 (0.492)
ø6.0 (0.236)
ø5.8 (0.228)
ø8.3 (0.327)
ø8.0 (0.315)
ø0.45 (0.018)
5.08 (0.200)
spacing
Anode B
Isolated cathode
Anode A Metal case
GMOY6639
Radiant sensitive area
ø9.5 (0.374)
ø9.0 (0.354)
0.09 (0.004)
Radiant sensitive area
Diode system
2.0 (0.079) x 1.67 (0.066) each
Approx. weight 1.5 g
0.85 (0.033)
0.65 (0.026)
1.0 (0.039)
0.8 (0.031)
2007-04-03 6
SFH 221
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as as sured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the he alth of the user may be endangered.
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves