1165891 High-power industrial transistors. NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: (TO-3) * Collector-emitter sustaining voltage - VCEO (sus) = 140V dc (minimum). * * Excellent second breakdown capability. Pb-free package. Dimensions A Maximum 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K Style 1: Pin 1. Base 2. Emitter Collector (Case) Minimum L 0.440 (11.18) 0.665 (16.89) BSC - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) V (TO-3) Case 1-07 Style 1 0.480 (12.19) N U 10 Ampere Power Transistors NPN Silicon 140 Volts - 117 Watts 1.187 (30.15) BSC 0.131 (3.33) 0.188 (4.77) Dimensions : Inches (Millimetres) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 22/10/08 V1.1 1165891 Maximum Ratings (Note 1) Rating Symbol Value VCEO 140 Collector-Base Voltage VCB 160 Emitter-Base Voltage VEB 7.0 IC 10 15 Collector-Emitter Voltage Unit V dc Collector Current - Continuous - Peak Base Current - Continuous - Peak IB 7.0 - Total Device Dissipation at TC = 25C Derate above 25C (Note 2) PD 117 0.67 W W/C TJ, Tstg -65 to +200 C Symbol Maximum Unit RJC 1.17 C/W Operating and Storage Junction Temperature Range A dc Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. 2. This data guaranteed in addition to JEDEC registered data. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit Collector-Emitter Sustaining Voltage (lC = 200mA dc, lB = 0) VEO (sus) 140 - V dc Collector Cut off Current (VCE = 140V dc, IB = 0 ) ICEO - 200 Collector Cut off Current (VCE = 140 V dc, VBE (off) = 1.5 V dc) (VCE = 140V dc, VBE (off) = 1.5V dc, TC = 150C) ICEX - 5.0 30 Emitter Cut off Current (VEB = 7.0V dc IC = 0 ) IEBO - 5.0 Off Characteristics mA dc http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 22/10/08 V1.1 1165891 Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit hFE 2.0 7.5 70 - - Collector-Emitter Saturation Voltage (lC = 10A dc, IB = 2.0A dc) VCE (sat) - 5.0 Base-Emitter On Voltage (lC = 10A dc, VCE = 4.0V dc) VBE (on) - 5.7 Current-Gain - Bandwidth Product (Note 4) (lC = 2.0A dc, VCE = 4.0V dc, ftest = 40kHz) fT 80 - kHz Small-Signal Current Gain (lC = 2.0A dc, VCE = 4.0V dc, f = 1.0kHz) hfe 12 72 - On Characteristic (Note 3) DC Current Gain (lC = 3.0A dc, VCE = 4.0V dc) (lC = 10A dc, VCE = 4.0V dc) V dc Dynamic Characteristics 3. Pulse Test : Pulse Width = 300s, Duty Cycle 2.0%. 4. fT = |hfe|* ftest. PD/PD/(Maximum), Power Dissipation (Normalized) Power Derating TC, Case Temperature (C) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 22/10/08 V1.1 1165891 Active-Region Safe Operating Area Information IC, Collector Current (Amperes) There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data is based on TJ (PK) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) Collector-Saturation Region hFE, DC Current Gain VCE, Collector Emitter Voltage (Volts) DC Current Gain IC, Collector Current (Amperes) IB, Base Current (mA) Part Number Table Description Transistor, NPN, TO-3 Part Number 2N3442 Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2008. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <4> 22/10/08 V1.1