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High-power industrial transistors.
NPN silicon power transistor designed for applications in industrial and
commercial equipment including high fidelity audio amplifiers, series and shunt
regulators and power switches.
Features:
•Collector-emitter sustaining voltage - VCEO (sus) = 140V dc (minimum).
•Excellent second breakdown capability.
•Pb-free package.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
10 Ampere
Power Transistors
NPN Silicon
140 Volts - 117 Watts
(TO-3)
Case 1-07
Style 1
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 140
V dcCollector-Base Voltage VCB 160
Emitter-Base Voltage VEB 7.0
Collector Current - Continuous
- Peak IC10
15
Adc
Base Current - Continuous
- Peak IB7.0
-
Total Device Dissipation at TC= 25°C
Derate above 25°C (Note 2) PD117
0.67
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Maximum Ratings (Note 1)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual
stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional
operation is not implied, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
2. This data guaranteed in addition to JEDEC registered data.
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case RθJC 1.17 °C/W
Thermal Characteristics
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (lC = 200mA dc, lB= 0) VEO (sus) 140 - V dc
Collector Cut off Current
(VCE = 140V dc, IB= 0 ) ICEO - 200
mA dc
Collector Cut off Current
(VCE = 140 V dc, VBE (off) = 1.5 V dc)
(VCE = 140V dc, VBE (off) = 1.5V dc, TC= 150°C)
ICEX - 5.0
30
Emitter Cut off Current
(VEB = 7.0V dc IC= 0 ) IEBO - 5.0
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Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
On Characteristic (Note 3)
DC Current Gain
(lC= 3.0A dc, VCE = 4.0V dc)
(lC= 10A dc, VCE = 4.0V dc)
hFE 2.0
7.5
70
-
-
Collector-Emitter Saturation Voltage
(lC= 10A dc, IB= 2.0A dc) VCE (sat) - 5.0
V dc
Base-Emitter On Voltage
(lC= 10A dc, VCE = 4.0V dc) VBE (on) - 5.7
Dynamic Characteristics
Current-Gain - Bandwidth Product (Note 4)
(lC= 2.0A dc, VCE = 4.0V dc, ftest = 40kHz) fT80 - kHz
Small-Signal Current Gain
(lC= 2.0A dc, VCE = 4.0V dc, f = 1.0kHz) hfe 12 72 -
3. Pulse Test : Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
4. fT= |hfe|• ftest.
TC, Case Temperature (°C)
Power Derating
PD/PD/(Maximum), Power Dissipation
(Normalized)
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Active-Region Safe Operating Area Information
VCE, Collector Emitter Voltage (Volts)
IC, Collector Current (Amperes)
DC Current Gain
IC, Collector Current (Amperes)
hFE, DC Current Gain
IB, Base Current (mA)
Collector-Saturation Region
VCE, Collector Emitter Voltage (Volts)
There are two limitation on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of
the transistor that must be observed for reliable operation i.e.,
the transistor must not be subjected to greater dissipation than
curves indicate.
The data is based on TJ (PK) = 200°C; TCis variable depending
on conditions. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Part Number Table
Description Part Number
Transistor, NPN, TO-3 2N3442
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