TGA4823-2-SM 9.9 - 12.5 Gb/s Linear/Limiting Optical Modulator Driver Key Features * * * * * * * * Measured Performance Up to 10 Vpp Linear Output Voltage > 12 Vpp Limiting Mode Output Voltage Gain: 19 dB Integrated High Frequency Bias Tee Internal DC blocks Single-ended Input / Output Bias: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg = -0.3 V Typical for Linear operation Package Dimensions: 8 x 8 x 2.1 mm Primary Applications Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg -0.3 V Typical PRBS = 231-1; CPC = 50%, 10.7 GB/s; Vin = 1Vpp * Mach-Zehnder Modulator Driver for Metro and Long Haul Product Description The TriQuint TGA4823-2-SM is part of a series of optical driver amplifiers suitable for a variety of driver applications. The TGA4823-2-SM is a high power wideband AGC amplifier that typically provides 19 dB small signal gain with 19 dB AGC range. The TGA4823-2-SM is an excellent choice for applications requiring high drive combined with high linearity. The TGA4823-2-SM has demonstrated capability to deliver 10Vpp while maintaining output harmonic levels near -30dBc for a 2GHz fundamental. The TGA4823-2-SM requires a low frequency choke and control circuitry. RoHS compliant and Lead-Free finish. MSL1 per IPC/JEDEC J-STD-020C . Evaluation boards available on request. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C TGA4823-2-SM Table I Absolute Maximum Ratings 1/ Symbol Parameter Vd-Vg Value Notes Drain to Gate Voltage 12 V Vd Drain Voltage 9V 2/ Vg Gate Voltage Range -5 to 0 V 2/ Control Voltage Range -1 to +2 V 2/ 400 mA 2/ Vctrl Id Drain Current Ig Gate Current Range -1.8 to 18.9 mA Ictrl Control Current Range -1.8 to 18.9 mA Pin Input Continuous Wave Power Tchannel 27.8 dBm Channel Temperature 200 C 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. Table II Recommended Linear Operating Conditions Symbol Value Vd Drain Voltage 8V Id Drain Current 310 mA Drain Current under RF Drive 350 mA Id_Drive Vg Vctrl 1/ Parameter 1/ Typical Gate Voltage -0.3 V Control Voltage 1V See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Table III TGA4823-2-SM RF Characterization Table Bias: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg = -0.3 V, typical SYMBOL PARAMETER TEST CONDITIONS MIN NOMINAL MAX UNITS Gain Small Signal Gain f = 1.5 - 2.5 GHz f = 0.1 - 4 GHz f = 6 GHz f = 8 GHz 18.5 - 20 20 19 18 23 - dB 3dB BW Small Signal 3 dB Bandwidth 1/ f = 0.1 - 12 GHz 7.5 9.5 - GHz IRL Input Return Loss f = 0.1 - 7GHz f = 7.1 - 10 GHz f = 10.1 - 16 GHz - 15 15 9 - dB ORL Output Return Loss f = 0.1 - 4 GHz f = 4.1 - 7 GHz f = 7.1 - 11 GHz f = 11.1 - 16 GHz - 15 15 15 12 - dB Gain Ripple S21 peak-peak gain variation 2/ f = 0.1 - 0.5 GHz f = 0.6 - 5 GHz f = 5.1 - 10 GHz -0.8 -1.2 -3 0.8 1.2 3 dB DLP Deviation from S21 Linear Phase f = 2 - 10 GHz f = 10.1 - 15 GHz -40 -175 +/- 30 +/- 150 40 175 deg P2 2nd Harmonic f = 0.5, 2.0, 5.0 GHz Pout = 22 dBm - - -22 dBc P3 3rd Harmonic f = 0.5, 2.0, 5.0 GHz Pout = 22 dBm - - -26 dBc Psat Saturated Output Power f = 2 GHz - 26 ( 12.5) - dBm (Vpp) P1dB Output Power @ 1dB Compression f = 2 GHz - 25 - dBm AGC Range Small Signal AGC Range - 19 - dB 1/ Fit the S21 curve to 4th order polynomial. AssignAve gain = |S21| measured between 1.5 and 2.5 GHz. Determine 3dB point from polynomial fit to S21 curve. 2/ Ripple cacluation is defined the difference between measured S21 value (dB) and a 4th order (or less) polynomial fit for S21 (dB) for frequency range = 0.1 to 12 GHz. 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C TGA4823-2-SM Table IV Power Dissipation and Thermal Properties Parameter Value Notes Tbaseplate = 70 C Pd = 3.17 W Tchannel = 150 C Tm = 1.0E+6 Hrs 1/ 2/ Thermal Resistance, jc Vd = 8 V Id = 310 mA Pd = 2.48 W jc = 24.3 (C/W) Tchannel = 130 C Tm = 5.8E+6 Hrs Thermal Resistance, jc Under RF Drive Vd = 8 V Id = 350 mA Pout = 26.5 dBm Pd = 2.36 W jc = 24.3 (C/W) Tchannel = 127 C Tm = 7.6E+6 Hrs Maximum Power Dissipation 1/ Test Conditions Mounting Temperature Refer to Solder Reflow Profiles (pp16) Storage Temperature -65 to 150 C For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. 2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Median Lifetime (Tm) vs. Channel Temperature 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Measured Data TGA4823-2-SM Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg -0.3 V Typical 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Measured Data TGA4823-2-SM Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg -0.3 V Typical 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Measured Data TGA4823-2-SM Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg -0.3 V Typical Freq = 2 GHz 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Measured Data TGA4823-2-SM Linear Mode: Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg -0.3 V Typical PRBS = 231-1; CPC = 50%, 10.7 GB/s Input Eye: Vin = 250 mVpp Output Eye: Vin = 250 mVpp, Vopp = 2.5 Vpp Input Eye: Vin = 500 mVpp Output Eye: Vin = 500 mVpp, Vopp = 5 Vpp 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Measured Data TGA4823-2-SM Linear Mode: Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg -0.3 V Typical PRBS = 231-1; CPC = 50%, 10.7 GB/s Input Eye: Vin = 1 Vpp Output Eye: Vin = 1 Vpp, Vopp = 9.3 Vpp 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Measured Data TGA4823-2-SM Limiting Mode: Bias conditions: Vd = 8 V, Id = 310 mA, Vctrl = +1 V, Vg -0.3 V Typical PRBS = 231-1; CPC = 50%, 10.7 GB/s Input Eye: Vin = 1700 mVpp Output Eye: Vin = 1700 Vpp, Vopp = 4.2 Vpp Output Eye: Vin = 1700 Vpp, Vopp = 8.3 Vpp Output Eye: Vin = 1700 Vpp, Vopp = 11 Vpp 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C TGA4823-2-SM Electrical Schematic Bias Procedures Vd=8V, CPC=50% Bias ON Bias OFF 1. Disable the output of the PPG 1. Disable the output of the PPG 2. Set Vd = 0V, Vctrl = 0V & Vg = 0V 2. Set Vctrl = 0V 3. Set Vg = -1.5V 3. Set Vd = 0V 4. Increase Vd to 8V observing Id - Assure Id = 0mA 4. Set Vg = 0V 5. Set Vctrl = +1V - Id should still be 0mA 6. Make Vg more positive until Id = 310mA. Vg will be approximately -0.3V. 7. Enable the output of the PPG. 8. Output Swing Adjust: Adjust Vctrl slightly positive to increase output swing or adjust Vctrl slightly negative to decrease the output swing. 9. Crossover Adjust: Adjust Vg slightly positive to push the crossover down or adjust Vg slightly negative to push the crossover up. 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C TGA4823-2-SM Recommended Application Circuit GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C 12 TGA4823-2-SM Recommended Assembly Diagram RFout RFin TGA4823-2-SM VD VD_Bypass VCTRL VG GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C 13 TGA4823-2-SM Package Pinout 28 27 26 25 24 23 22 22 23 24 25 26 27 28 Pin 1 indicator 1 21 21 1 2 20 20 2 3 19 19 3 4 18 18 5 17 17 5 6 16 16 6 7 15 15 7 8 9 10 11 12 13 14 14 Pin Description 1,2,3,5,6,7,8,9,10, 11,13,14,15,16,18, 19,20,21,22, 23,25,28 N/C 4 RF In 12 Vg 17 RF Out 24 Vd 26 Vd_Bypass 25, 27 Vctrl 29 GND 4 29 13 12 11 10 9 8 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C Mechanical Drawing Units: Millimeters TGA4823-2-SM TGA4823-2 YYWW ZZZ DXXXXXXX Part Markings: YY = Assembly year, WW= Assembly week, ZZZ = Serial Number, DXXXXXXX = Batch ID Package base Package lid Materials: Aluminum Nitride (AlN) White Alumina (Al2 03) Pad finish on package base: Electroless gold (Au) 0.5 - 1.0 um Over Electroless nickel (Ni) 2.0 um min. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C 15 TGA4823-2-SM Assembly Notes Recommended Surface Mount Package Assembly * Proper ESD precautions must be followed while handling packages. * Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. * TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. * Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. * Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 - 120 sec @ 140 - 160 C 60 - 180 sec @ 150 - 200 C Time above Melting Point 60 - 150 sec 60 - 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 - 20 sec 10 - 20 sec Ramp-down Rate 4 - 6 C/sec 4 - 6 C/sec Ordering Information Part Package Style TGA4823-2-SM 8x8 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2012 (c) Rev C