Silicon SPDT Switch, Nonreflective,
9 kHz to 44 GHz
Data Sheet
ADRF5027
Rev.
0
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FEATURES
Ultrawideband frequency range: 9 kHz to 44 GHz
Nonreflective design
Low insertion loss
1.1 dB to 18 GHz
1.5 dB to 26 GHz
2.2 dB to 40 GHz
3.8 dB to 44 GHz
High isolation
53 dB to 18 GHz
48 dB to 26 GHz
48 dB to 40 GHz
43 dB to 44 GHz
High input linearity
P1dB: 26 dBm typical
IP3: 54 dBm typical
High power handling
24 dBm insertion loss path
24 dBm isolation path
All off state control
No low frequency spurious signals
0.1 dB RF settling time: 6.0 µs typical
20-terminal, 3 mm × 3 mm LGA package
Pin compatible with ADRF5026, fast switching version
APPLICATIONS
Industrial scanners
Test and instrumentation
Cellular infrastructure: 5G mmWave
Military radios, radars, electronic counter measures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
FUNCTIONAL BLOCK DIAGRAM
GND
RF2
GND
GND
GND
GND
GND
RF1
GND
GND
DRIVER
RFC
GND
GND
VSS
EN
GND
CTRL
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
16
17
18
19
20
15
14
GND
GND
50Ω
50Ω
16768-001
Figure 1.
GENERAL DESCRIPTION
The ADRF5027 is a nonreflective, single-pole, double-throw
(SPDT) radio frequency (RF) switch manufactured in a silicon
process.
The ADRF5027 operates from 9 kHz to 44 GHz with better
than 3.8 dB of insertion loss and 43 dB of isolation. The
ADRF5027 features an all off control, where both RF ports are
in an isolation state. The ADRF5027 has a nonreflective design
and both of the RF ports are internally terminated to 50 Ω.
The ADRF5027 requires a dual-supply voltage of +3.3 V and
−3.3 V. The device employs complimentary metal-oxide
semiconductor/low-voltage transistor-transistor logic
(CMOS/LVTTL) logic-compatible controls.
The ADRF5027 is pin compatible with the ADRF5026 fast
switching version, which operates from 100 MHz to 44 GHz.
The ADRF5027 RF ports are designed to match a characteristic
impedance of 50 Ω. For ultrawideband products, impedance
matching on the RF transmission lines can further optimize
high frequency insertion loss and return loss characteristics.
Refer to the Narrow-Band Impedance Matching section for an
example of a matched circuit that achieves a low insertion loss
response of 2.2 dB from 28 GHz to 43 GHz.
The ADRF5027 comes in a 20-terminal, 3 mm × 3 mm, RoHS-
compliant, land grid array (LGA) package and can operate from
−40°C to +105°C.
ADRF5027 Data Sheet
Rev. 0 | Page 2 of 13
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Specifications ............................................................... 3
Absolute Maximum Ratings ............................................................ 5
Thermal Resistance ...................................................................... 5
Power Derating Curves ................................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ............................. 6
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Insertion Loss, Return Loss, and Isolation ................................7
Input Power Compressions and Third-Order Intercept ..........8
Theory of Operation .........................................................................9
Applications Information .............................................................. 10
Evaluation Board ........................................................................ 10
Probe Matrix Board ................................................................... 11
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
7/2018—Revision 0: Initial Version
Data Sheet ADRF5027
Rev 0 | Page 3 of 13
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
VDD = 3.3 V, VSS = −3.3 V, VCTRL/VEN = 0 V or VDD, and TCASE = 25°C in a 50 Ω system, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 0.009 44,000 MHz
INSERTION LOSS IL
Between RFC and RF1/RF2 9 kHz to 18 GHz 1.1 dB
18 GHz to 26 GHz 1.5 dB
26 GHz to 35 GHz 1.9 dB
35 GHz to 40 GHz 2.2 dB
40 GHz to 44 GHz1 3.8 dB
RETURN LOSS RL
RFC and RF1/RF2 (On) 9 kHz to 18 GHz 18 dB
18 GHz to 26 GHz 14 dB
26 GHz to 35 GHz 14 dB
35 GHz to 40 GHz 12 dB
40 GHz to 44 GHz1 7 dB
RF1/RF2 (Off) 9 kHz to 18 GHz 28 dB
18 GHz to 26 GHz
28
dB
26 GHz to 35 GHz 17 dB
35 GHz to 40 GHz 13 dB
40 GHz to 44 GHz1 10 dB
ISOLATION
Between RFC and RF1/RF2 9 kHz to 18 GHz 53 dB
18 GHz to 26 GHz 48 dB
26 GHz to 35 GHz 48 dB
35 GHz to 40 GHz 48 dB
40 GHz to 44 GHz 43 dB
Between RF1 and RF2 9 kHz to 18 GHz 60 dB
18 GHz to 26 GHz 60 dB
26 GHz to 35 GHz 60 dB
35 GHz to 40 GHz 60 dB
40 GHz to 44 GHz
50
dB
SWITCHING CHARACTERISTICS
Rise and Fall Time tRISE, tFALL 10% to 90% of RF output 1.3 µs
On and Off Time
t
ON
, t
OFF
50% of triggered V
CTRL
to 90% of RF output
3.6
µs
RF Settling Time
0.1 dB 50% of triggered VCTRL to 0.1 dB of final RF output 6.0 µs
0.05 dB 50% of triggered VCTRL to 0.05 dB of final RF output 7.5 µs
INPUT LINEARITY2 200 kHz to 40 GHz
1 dB Compression P1dB 26 dBm
Third-Order Intercept IP3 Two-tone input power = 12 dBm each tone, Δf = 1 MHz 54 dBm
SUPPLY CURRENT VDD and VSS pins
Positive IDD 2 µA
Negative ISS 100 µA
DIGITAL CONTROL INPUTS CTRL and EN pins
Voltage
Low VINL 0 0.8 V
High VINH 1.2 3.3 V
Current
Low and High Current IINL, IINH <1 µA
ADRF5027 Data Sheet
Rev. 0 | Page 4 of 13
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
RECOMMENDED OPERATING
CONDITONS
Supply Voltage
Positive VDD 3.15 3.45 V
Negative VSS −3.45 −3.15 V
Digital Control Voltage VCTRL, VEN 0 VDD V
RF Input Power3 PIN f = 200 kHz to 40 GHz, TCASE = 85°C4
Insertion Loss Path RF signal is applied to the RFC or through connected
RF1/RF2
24 dBm
Isolation Path RF signal is applied to terminated RF1/RF2 24 dBm
Hot Switching
RF signal is present at the RFC while switching between
RF1 and RF2
24
dBm
Case Temperature TCASE −40 +105 °C
1 Impendence matching on RF transmission lines improves high frequency performance. Refer to the Applications Information section for more information.
2 For input linearity performance vs. frequency, see Figure 11 and Figure 13.
3 For power derating vs. frequency, see Figure 2 and Figure 3. This power derating is applicable for insertion loss path, isolation path, and hot switching power
specifications.
4 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.
Data Sheet ADRF5027
Rev 0 | Page 5 of 13
ABSOLUTE MAXIMUM RATINGS
For recommended operating conditions, see Table 1.
Table 2.
Parameter Rating
Positive Supply Voltage −0.3 V to +3.6 V
Negative Supply Voltage −3.6 V to +0.3 V
Digital Control Input Voltage −0.3 V to VDD +0.3 V
RF Input Power1 (200 kHz to 40 GHz at
TCASE = 85°C2)
Insertion Loss Path 26 dBm
Isolation Path
25 dBm
Hot Switching 25 dBm
Temperature
Junction, TJ 135°C
Storage Range −65°C to +150°C
Reflow 260°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
RFC, RF1, RF2 Pins 1500 V
Digital Pins 2000 V
Charged Device Model (CDM) 1250 V
1 For power derating vs. frequency, see Figure 2 and Figure 3. This power
derating is applicable for insertion loss path, isolation path, and hot
switching power specifications.
2 For 105°C operation, the power handling degrades from the TCASE = 85°C
specification by 3 dB.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any one
time.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 3. Thermal Resistance
Package Type θJC Unit
CC-20-3
Through Path 423 °C/W
Terminated Path 241 °C/W
POWER DERATING CURVES
2
–12
–10
–8
–6
–4
–2
0
10k 100k 1M 10M 100M 1G 10G 100G
POWER DE RATI NG (dB)
FRE Q UE NCY ( Hz )
16768-002
Figure 2. Power Derating vs. Frequency, Low Frequency Detail, TCASE = 85°C
2
–12
–10
–8
–6
–4
–2
0
30 32 34 36 40 44 4838 42 46 50
POWER DE RATI NG (dB)
FRE Q UE NCY ( Hz )
16768-003
Figure 3. Power Derating vs. Frequency, High Frequency Detail, TCASE = 85°C
ESD CAUTION
ADRF5027 Data Sheet
Rev. 0 | Page 6 of 13
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
GND
RF2
GND
GND
GND
GND
GND
RF1
GND
GND
RFC
GND
GND
VSS
EN
GND
CTRL
VDD
1
2
3
4
5
6 7 8 9 10
11
12
13
1617
1819
20
15
14
GND
GND
ADRF5027
TOP VIEW
(No t t o Scal e)
NOTES
1. THE EXPOSED PAD MUST BE CO NNECTED
TO RF AND DC G ROUND O F T HE P CB.
16768-004
Figure 4. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1, 2, 4, 5, 6, 7, 9, 10,
13, 16, 17, 19, 20
GND Ground. These pins must be connected to the RF and dc ground of the PCB.
3 RFC RF Common Port. This pin is dc-coupled to 0 V and ac matched to 50 Ω. No dc blocking capacitor is
necessary when the RF line potential is equal to 0 V dc. See Figure 5 for the interface schematic.
8
RF1
RF1 Port. This pin is dc-coupled to 0 V and ac matched to 50 Ω. No dc blocking capacitor is necessary
when the RF line potential is equal to 0 V dc. See Figure 5 for the interface schematic.
11 VDD Positive Supply Voltage.
12 CTRL Control Input Voltage. See Table 5 for the truth table. See Figure 6 for the interface schematic.
14 EN Enable Input Voltage. See Table 5 for the truth table. See Figure 6 for the interface schematic.
15 VSS Negative Supply Voltage.
18 RF2 RF2 Port. This pin is dc-coupled to 0 V and ac matched to 50 Ω. No dc blocking capacitor is necessary
when the RF line potential is equal to 0 V dc. See Figure 5 for the interface schematic.
EPAD Exposed Pad. The exposed pad must be connected to the RF and dc ground of the PCB.
INTERFACE SCHEMATICS
RFC,
RF1,
RF2
16768-005
Figure 5. RFC, RF1, RF2 Interface Schematic
VDD
VDD
CTRL, EN
16768-006
Figure 6. CTRL, EN Interface Schematic
Data Sheet ADRF5027
Rev 0 | Page 7 of 13
TYPICAL PERFORMANCE CHARACTERISTICS
INSERTION LOSS, RETURN LOSS, AND ISOLATION
VDD = 3.3 V, VSS = −3.3 V, VCTRL/VEN = 0 V or VDD, and TCASE = 25°C in a 50 Ω system, unless otherwise noted.
Insertion loss and return loss are measured on the probe matrix board using ground-signal-ground (GSG) probes close to the RFx pins.
Signal coupling between the probes limits the isolation performance of ADRF5027. Isolation is measured on the ADRF5027-EVA LZ
evaluation board. See the Applications Information section for details on the ADRF5027-E VA L Z evaluation board and probe matrix board.
0
–7
–6
–5
–4
–3
–2
–1
0 5 10 15 25 35 4520 30 40 50
INSERTION LOSS (dB)
FRE Q UE NCY ( GHz)
RF1, T
CASE
= 25° C
RF2, T
CASE
= 25° C
16768-007
Figure 7. Insertion Loss vs. Frequency at Room Temperature for RF1 and RF2
0
–40
–35
–30
–25
–20
–15
–10
–5
0 5 10 15 25 35 4520 30 40 50
RET URN LOS S ( dB)
FRE Q UE NCY ( GHz)
RFC
RF1/RF2 ON
RF1/RF2 OFF
16768-008
Figure 8. Return Loss vs. Frequency
0 5 10 15 25 35 4520 30 40 50
FRE Q UE NCY ( GHz)
T
CASE
= +105°C
T
CASE
= +85°C
T
CASE
= +25°C
T
CASE
= –40°C
0
–8
–7
–6
–5
–4
–3
–2
–1
INSERTION LOSS (dB)
16768-009
Figure 9. Insertion Loss vs. Frequency over Temperature
0 5 10 15 25 35 45
20 30 40 50
FRE Q UE NCY ( GHz)
0
–80
–70
–60
–50
–40
–30
–20
–10
ISOLATION (dB)
RFC TO RF1/RF2
RF1 TO RF2
16768-010
Figure 10. Isolation vs. Frequency
ADRF5027 Data Sheet
Rev. 0 | Page 8 of 13
INPUT POWER COMPRESSIONS AND THIRD-ORDER INTERCEPT
VDD = 3.3 V, VSS = −3.3 V, VCTRL/VEN = 0 V or VDD, and TCASE = 25°C in a 50 Ω system, unless otherwise noted. All of the large signal
performance parameters are measured on the ADRF5027-E VA LZ evaluation board.
30
10
12
14
16
20
24
28
18
22
26
0 5 10 15 25 3520 30 40
INPUT P1dB (dBm)
FRE Q UE NCY ( GHz)
16768-011
Figure 11. Input P1dB vs. Frequency
60
20
25
35
45
55
30
40
50
0 5 10 15 25 3520 30 40
INPUT I P 3 ( dBm)
FRE Q UE NCY ( GHz)
16768-012
Figure 12. Input IP3 vs. Frequency
30
10
14
18
22
12
16
20
24
26
28
10k 100k 1M 10M 100M 1G
INPUT P1dB (dBm)
FRE Q UE NCY ( GHz)
16768-013
Figure 13. Input P1dB vs. Frequency (Low Frequency Detail)
60
20
30
40
25
35
45
50
55
10k 100k 1M 10M 100M 1G
INPUT I P 3 ( dBm)
FRE Q UE NCY ( Hz )
16768-014
Figure 14. Input IP3 vs. Frequency (Low Frequency Detail)
Data Sheet ADRF5027
Rev. 0 | Page 9 of 13
THEORY OF OPERATION
The ADRF5027 requires a positive supply voltage applied to the
VDD pin and a negative supply voltage applied to the VSS pin.
Bypassing capacitors are recommended on the supply lines to
filter high frequency noise.
All of the RF ports (RFC, RF1, and RF2) are dc-coupled to 0 V,
and no dc blocking capacitors are required at the RF ports when
the RF potential is equal to 0 V.
The RF ports are internally matched to 50 Ω. Therefore,
external matching networks are not required. Impedance
matching on the RF transmission lines can improve insertion
loss and return loss performance at high frequencies.
The ADRF5027 integrates a driver to perform logic function
internally and to provide the advantage of a simplified control
interface. The driver features two digital control input pins,
CTRL and EN. When the EN pin is logic low, the logic level
applied to the CTRL pin determines which RF port is in
insertion loss state and which RF port is in isolation state.
The ADRF5027 supports an all off state control. When the EN
pin is logic high, both the RF1 to RFC path and the RF2 to RFC
path are in an isolation state, regardless of the logic state of the
CTRL pin. The RF1 and RF2 ports are terminated to internal
50 Ω resistors, and the RFC port becomes open reflective (see
Table 5).
The ADRF5027 design is bidirectional with equal power
handling capabilities. An RF input signal (RFIN) can be applied
to the RFC port or the RF1 or RF2 port. The isolation path
provides high loss between the unselected RFx port and the
insertion loss path.
The power-up sequence is as follows:
1. Power up GND.
2. Power up VDD.
3. Power up VSS.
4. Power up the digital control inputs. The relative order of
the logic control inputs is not important. Powering up the
digital control inputs before the VDD supply can
inadvertently forward bias and damage the internal ESD
protection structures.
5. Apply an RF input signal.
The power-down sequence is the reverse order of the power-up
sequence.
Table 5. Control Voltage Truth Table
Digital Control Input RF Paths
EN CTRL RF1 to RFC RF2 to RFC
Low Low Isolation (off) Insertion loss (on)
Low High Insertion loss (on) Isolation (off)
High Low Isolation (off) Isolation (off)
High High Isolation (off) Isolation (off )
ADRF5027 Data Sheet
Rev. 0 | Page 10 of 13
APPLICATIONS INFORMATION
EVALUATION BOARD
The ADRF5027-EVAL Z evaluation board is a 4-layer evaluation
board. The outer copper (Cu) layers are 0.5 oz (0.7 mil) plated
to 1.5 oz (2.2 mil) and are separated by dielectric materials.
Figure 15 shows the ADRF5027-EVAL Z evaluation board stack up.
1.5oz Cu (2. 2m i l ) 1.5oz Cu (2. 2m i l )
0.5oz Cu (0. 7m i l )
0.5oz Cu (0. 7m i l )
1.5oz Cu (2. 2m i l )
RO4003
1.5oz Cu (2. 2m i l )
TO TAL THICKNESS
~62mil
W = 14m i l
G = 7mil
T = 2.2m i l
H = 8 m il
16768-015
Figure 15. Evaluation Board Stack Up
All RF and dc traces are routed on the top copper layer, whereas
the inner and bottom layers are ground planes that provide a
solid ground for the RF transmission lines. The top dielectric
material is 8 mil Rogers RO4003, which offers optimal high
frequency performance. The middle and bottom dielectric
materials provide mechanical strength. The overall board
thickness is 62 mil, which allows 2.4 mm RF launchers to be
connected at the board edges.
16768-016
Figure 16. Evaluation Board Layout
The RF transmission lines are designed using a coplanar
waveguide (CPWG) model with a width of 14 mil and a ground
spacing of 7 mil, and have a characteristic impedance of 50 Ω.
For optimal RF and thermal grounding, as many plated through
vias as possible are arranged around transmission lines and
under the exposed pad of the package.
The RF input and output ports (RFC, RF1, and RF2) are connected
through 50 Ω transmission lines to the 2.4 mm launchers (J1,
J2, and J3, respectively). These high frequency RF launchers are
connected by contact and are not soldered to the board.
The thru calibration line, THRU CAL, can calibrate out the
board loss effects from the ADRF5027-EVAL Z evaluation board
measurements to determine the device performance at the pins
of the IC. Figure 17 shows the typical board loss for the
ADRF5027-EVA L Z evaluation board at room temperature, the
embedded insertion loss, and the de-embedded insertion loss
for the ADRF5027.
0
–8
–7
–6
–5
–4
–3
–2
–1
0510 15 25 3520 30 40 45
INSERTION LOSS (dB)
FRE Q UE NCY ( GHz)
THRU LOSS
EMBEDDED IL
DEEMBEDDED IL
16768-017
Figure 17. Insertion Loss vs. Frequency
Two power supply ports are connected to the VDD and VSS test
points, and the ground reference is connected to the GND test
point. On the supply traces, VDD and VSS, a 100 pF bypass
capacitor filters high frequency noise. Additionally, unpopulated
component positions are available for applying extra bypass
capacitors.
Two control ports are connected to the EN and CTRL test
points. There are provisions for the resistor capacitor (RC) filter
to eliminate dc-coupled noise, if needed by the application.
The ADRF5027-EVAL Z evaluation board schematic is shown in
Figure 18.
GND
RF2
GND
GND
GND
GND
GND
RF1
GND
GND
GND
GND
RFC
GND
GND
GND
EN
VSS
VSS
CTRL
VDD
EN
CTRL
VDD
1
2
3
4
5
67 8 9 10
11
12
13
14
15
16
17
18
1920
ADRF5027
RF2
RFC
RF1
R4
0Ω
R3
0Ω
C10
100pF
C7
100pF
THRU_CAL
16768-018
Figure 18. Simplified Evaluation Board Schematic
Data Sheet ADRF5027
Rev. 0 | Page 11 of 13
16768-019
Figure 19. Evaluation Board Component Placement
Table 6. Evaluation Board Components
Component Description
RF1_A, RFC_A, RF2_A End launch connectors, 2.4 mm
VDD_A, VSS_A, CTRL_A, EN_A, GND_A Through-hole mount test points
C7, C10 100 pF capacitors, 0402 package
R3, R4 0 Ω resistors, 0402 package
U2 ADRF5027 SPDT switch
PROBE MATRIX BOARD
The probe matrix board is a 4-layer board. This board also uses
an 8 mil Rogers RO4003 dielectric. The outer copper layers are
0.5 oz (0.7 mil) plated to 1.5 oz (2.2 mil). The RF transmission
lines were designed using a CPWG model with a width of
14 mil and a ground spacing of 7 mil to have a characteristic
impedance of 50 Ω.
1.5oz Cu (2. 2m i l ) 1.5oz Cu (2. 2m i l )
0.5oz Cu (0. 7m i l )
0.5oz Cu (0. 7m i l )
1.5oz Cu (2. 2m i l )
RO4003
1.5oz Cu (2. 2m i l )
TO TAL THICKNESS
~62mil
W = 14m i l
G = 7mil
T = 2.2m i l
H = 8 m il
16768-020
Figure 20. Probe Matrix Board Stack Up
Figure 20 and Figure 21 show the stack up and the layout,
respectively, of the probe matrix board. Measurements are made
using GSG probes at close proximity to the RF pins. Probing
reduces the reflections caused by mismatch arising from
connectors, cables, and board layout, resulting in a more
accurate measurement of insertion loss and return loss. Signal
coupling between the RF probes limits the isolation measurement.
The ADRF5027-E VA L Z evaluation board is used for making
isolation measurements.
RF traces for a through-reflect-line (TRL) calibration are
designed on the probe matrix board. Board loss is compensated
for by using a nonzero line length at calibration. The actual
board duplicates the same layout in matrix form, which allows
multiple devices to assemble at once. Insertion loss and return
loss measurements are made on this board, while isolation
measurements are made on the ADRF5027-EVAL Z evaluation
board.
RFC
VSS
EN
CTRL
VDD
RF2
EPAD
RF1 7mil
7mil
14mil 8mil
10mil
16768-021
Figure 21. Probe Matrix Board Layout
ADRF5027 Data Sheet
Rev. 0 | Page 12 of 13
Narrow-Band Impedance Matching
5G mmWave Frequencies
Narrow-band impedance matching on the RF transmission
lines can improve return loss and insertion loss for a targeted
frequency range. The impedance matched circuit, highlighted
in Figure 22, achieves a low insertion loss response of 2.2 dB
from 28 GHz to 43 GHz (see Figure 23). The dimensions of the
50 Ω lines are 14 mil trace width and a 7 mil gap. To implement
this impedance matched circuit, an 8 mil trace with a width of
5 mil is inserted between the pin pad and the 50 Ω trace.
Table 7, Figure 23, Figure 24, and Figure 25 show the measured
performance of ADRF5027 on the impedance matched circuit
on the probe matrix board.
RFC
VSS
EN
CTRL
VDD
RF2
EPAD
RF1 7mil
7mil
5mil
8mil
8mil
10mil
14mil
16768-022
Figure 22. Impedance Matched Circuit
Table 7. Impedance Matched Parameters
Parameter Test Condition Typ Unit
Insertion Loss See Figure 23
Between RFC and RF1/RF2
9 kHz to 18 GHz
1.1
dB
18 GHz to 26 GHz 1.8 dB
26 GHz to 35 GHz 2.3 dB
35 GHz to 40 GHz 2.2 dB
40 GHz to 44 GHz 2.7 dB
Return Loss See Figure 24
RFC and RF1/RF2 (On) 9 kHz to 18 GHz 20 dB
18 GHz to 26 GHz 8 dB
26 GHz to 35 GHz 7 dB
35 GHz to 40 GHz
10
dB
40 GHz to 44 GHz 14 dB
RF1/RF2 (Off) See Figure 24
9 kHz to 18 GHz 25 dB
18 GHz to 26 GHz 23 dB
26 GHz to 35 GHz 17 dB
35 GHz to 40 GHz 11 dB
40 GHz to 44 GHz 7 dB
0
–5
–4
–3
–2
–1
0 5 10 15 25 3520 30 40 45
INSERTION LOSS (dB)
FRE Q UE NCY ( GHz)
16768-023
Figure 23. Insertion Loss vs. Frequency, with Impedance Matching
0
–50
–40
–30
–20
–10
–45
–35
–25
–15
–5
0 5 10 15 25 3520 30 40 45
RET URN LOS S ( dB)
FRE Q UE NCY ( GHz)
RFC
RF1/RF2 ON
RF1/RF2 OFF
16768-024
Figure 24. Return Loss vs. Frequency, with Impedance Matching
FRE Q UE NCY ( GHz)
0
–80
–70
–60
–50
–40
–30
–20
–10
ISOLATION (dB)
RFC TO RF1/RF2
RF1 TO RF2
0 5 10 15 25 3520 30 40 45
16768-025
Figure 25. Isolation vs. Frequency, with Impedance Matching
Data Sheet ADRF5027
Rev. 0 | Page 13 of 13
OUTLINE DIMENSIONS
05-25-2016-B
PKG-004908
3.10
3.00
2.90
0.776
0.726
0.676
TOP VIEW
SIDE VIEW
BOTTOM VIEW
1
5
6
10
11
15
16 20
1.70
1.60 SQ
1.50
0.40
BSC
0.13
REF
0.70
REF
1.60 REF
SQ
0.25
0.20
0.15
0.30
0.25
0.20
0.236
0.196
0.156
FOR PRO P E R CONNECTI ON O F
THE EXPOSED PADS, REFER TO
THE PIN CO NFI GURAT IO N AND
FUNCTION DES CRIPTI ONS
SECTION OF THIS DATA SHEET.
EXPOSED
PAD
0.530 REF
CHAMFERED
PIN 1 (0. 3 × 45°)
PIN 1
CORNER ARE A
Figure 26. 20-Terminal Land Grid Array [LGA]
3 mm × 3 mm Body and 0.726 mm Package Height
(CC-20-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option Marking Code
ADRF5027BCCZN −40°C to +105°C 20-Terminal Land Grid Array [LGA] CC-20-3 027
ADRF5027BCCZN-R7 −40°C to +105°C 20-Terminal Land Grid Array [LGA] CC-20-3 027
ADRF5027-EVALZ Evaluation Board
1 Z = RoHS Compliant Part.
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registered trademarks are the property of their respective owners.
D16768-0-7/18(0)
