SILICON PNP EPITAXIAL TYPE AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2SA1163 Unit in mm High Voltage: Vcego=120V 28-08 Excellent hyp Linearity us ois : hep (c= 0.1mA)/hpR (ic = 2mA) =0.95 (Typ.) oo . EH +h + HighhpR . hrg=200~700 a} | | 2 3 + Low Noise :; NF=1dB(Typ.), 10dB (Max.) le ; e Complementary to 28C2713 AFF z e Small Package 3 33 MAXIMUM RATINGS (Ta = 25C) 3d *o +1 4 CHARACTERISTIC SYMBOL | RATING | UNIT 4 J I Collector-Base Voltage VCBO 120 Vv | Collector-Emitter Voltage VCEO 120 Vv 1. BASE Emitter-Base Voltage VEBO -5 Vv 2. EMITTER Collector Current Ic 100 mA 3. COLLECTOR Base Current Ip 20 mA ||JEDEC TO-236MOD Collector Power Dissipation Pc 150 mW |IEIAJ SC-59 Junction Temperature Tj 125 C TOSHIBA 2-3F1A Storage Temperature Range Tstg 55~125 C Weight : 0.012g ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current ICBO Vcp= 120V, Ip=0 _ [|-01 | vA Emitter Cut-off Current IEBO VEB=5V, Ic =0 _ |-01 | 2A DC Current Gain hg (Note)| Vor=6V, Ic=2mA 200 _ 700 Collector-Emitter = =- |-03 Vv Saturation Voltage Vex (sat) | Ic= 10mA, Ip=1mA Transition Frequency frp Vop= 6V, IG=1mA 100 | | MHz Collector Output Capacitance Cob Vcp= 10V, Ig=0, f=1MHz Pp . . VcE= 6V, Ic=0.1mA, , 1 Noise Figure NF f=1kH2, Rg=10k0 1.0 Oj} dB Note: hpp Classification GR(G): 200~400 BL(L) : 350~700 ( )Marking Symbol MARKING 5 Type Name a | hpp Rank C G<7_ ao & 147 2SA1163 Ic - VCE Ic VBE EMITTER COMMON EMITTER Vcg=~6V COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) -2 ~4 -6 -8 ~10 COLLECTOR-EMITTER VOLTAGE Vcr (V) -0.2 0.4 -0.6 -0.8 ~10 BASE-EMITTER VOLTAGE Vpe (V) hrE - Ic EMITTER CE=6V Ta=100C h PARAMETER - Ic DC CURRENT GAIN heg hfe 01 -03 -1 -3 -10 30 COLLEECTOR CURRENT 1 A cu G (mA) COMMON EMITTER hig (XkN) Vop= 6V, f=270Hz VCE (sat) Ic 1 -1 6 1c) & EMITTER B gS. = $ /ip=i0 4 bre (10-5) Ee - 5 wo 3 Ta = 100C [4 Eg ~0.1 1 as Fs - hog (XU) 8 58 as a3 0.01 1 Or-00lT =08 -1 3 -10 30 50 100 300 1000 3000 10000 COLLEECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (uA) 148 h PARAMETER SIGNAL SOURCE RESISTANCE Rg (2) ST h PARAMETER VCE COMMON EMITTER Ig=ImA f=270Hz Ta=25C hoe (XV) hie (Xk) -3 -10 -30 COLLECTOR-EMITTER VOLTAGE VcE (V) 100 1000 COLLEECTOR CURRENT Ic -100 EMITTER Vv (eA) 10000 149 SIGNAL SOURCE RESISTANCE Rg (2) COLLECTOR OUTPUT CAPACITANCE Cop (pF) Po (mW) COLLECTOR POWER DISSIPATION _ ~ NF Rg, Ic COMMON EMITTER Vceg=-6V f=1KHz Ta =25C NF=1dB ~10 100 -1000 2SA1163 ~ 10000 COLLEECTOR CURRENT Ic (uA} Cob VB -3 -10 30 100 COLLECTOR-BASE VOLTAGE Vop (V) Po Ta 25 50 15 100-125 AMBIENT TEMPERATURE Ta 160175 ec)