IRF820 N-channel 500V - 2.5 - 4A TO-220 PowerMeshTMII MOSFET General features Type VDSS RDS(on) ID IRF820 500V <0.3 4A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t Applications b c u O d o ) r s P ( t c e t u e l d o o r s P b OOrder codes e t e l o s b O Extremely high dv/dt capability 100% avalnche tested New high voltage benchmark Gate charge minimized 3 1 2 TO-220 The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. Switching application Part number Marking Package Packaging IRF820 IRF820 TO-220 Tube June 2006 Rev 3 1/12 www.st.com 12 Contents IRF820 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit ................................................ 8 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 IRF820 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source voltage (VGS = 0) 500 V Drain-gate voltage (RGS = 20 kW) 500 V Gate- source voltage 30 V 4 A ID Drain current (continuos) at tc = 25C ID Drain current (continuos) at TC = 100C 2.5 Drain current (pulsed) 12 Total dissipation at TC = 25C u d o IDM (1) PTOT Derating factor dv/dt (2) A ct 80 0.64 Peak diode recovery voltage slope Pr 3.5 uc e t e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Tstg Tj Storage temperature -65 to 150 Max. operating junction temperature 150 1. Pulse width limited by safe operating area 2. (s) A W W/C ) s t( V/ns C C ISD 2.5A, di/dt 50A/s, VDD V(BR)DSS, Tj TJMAX. Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.56 C/W Rthj-amb 62.5 C/W 0.5 C/W 300 C Thermal resistance junction-ambient max Rthc-sink Thermal resistance case-sink typ Tl Table 3. Symbol Maximum lead temperature for soldering purpose Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value Unit 4 A 210 mJ 3/12 Electrical characteristics 2 IRF820 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. On/off states Symbol Parameter Test Conditions V(BR)DSS Drain-source breakdown voltage ID = 250 A, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125 C IGSS Gate-body Leakage Current (VDS = 0) VGS = 30V VGS(th) Gate threshold voltage VDS = VGS, ID = 250A RDS(on) Static drain-source on resistance VGS = 10V, ID = 1.5 A Min. Typ. Max. 500 Unit V 1 50 A A 100 nA 3 4 V 2.5 3 Typ. Max. Unit ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Table 5. Symbol Dynamic Parameter Test Conditions gfs (1) Forward transconductance VDS > ID(on) x RDS(on)max, ID = 2A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance td(on) tr tr(Voff) tf Qg Qgs Qgd Min. 3 S VDS = 25V, f = 1 MHz, VGS = 0 315 52 7.7 pF pF pF Turn-on delay time Rise time Off-voltage rise time Fall time VDD = 300 V, ID = 2 A RG = 4.7 VGS = 10 V 10 13 15 13 ns ns ns ns Total gate charge Gate-source charge Gate-drain charge VDD = 400V, ID = 4 A, VGS = 10V 12.5 2.7 6.1 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 4/12 2 17 nC nC nC IRF820 Electrical characteristics Table 6. Symbol Source drain diode Parameter ISDM(1) Source-drain Current Source-drain Current (pulsed) VSD(2) Forward On Voltage ISD trr Qrr IRRM Test Conditions Min. Typ. ISD = 4 A, VGS = 0 Reverse recovery time I =4 A, di/dt = 100A/s Reverse recovery charge SD VDD = 100V, Tj = 150C Reverse recovery current 400 1.64 8.2 Max. Unit 4 16 A A 1.6 V ns C A ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 5/12 Electrical characteristics IRF820 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 IRF820 Figure 7. Electrical characteristics Gate charge vs gate-source voltage Figure 8. Capacitance variations ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit 3 IRF820 Test circuit Figure 12. Unclamped Inductive load test circuit Figure 13. Unclamped inductive waveform ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times 8/12 Figure 15. Gate charge test circuit IRF820 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 9/12 Package mechanical data IRF820 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 10/12 0.154 0.645 28.90 1.137 oP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 IRF820 5 Revision history Revision history Table 7. Revision history Date Revision Changes 21-Jun-2004 2 Preliminary version 27-Jun-2006 3 New template, no content change ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O 11/12 IRF820 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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