MJD350 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

   

DPAK For Surface Mount Applications

Designed for line operated audio output amplifier , switchmode power supply drivers

and other switching applications.

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“–1” Suffix)

•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

•Electrically Similar to Popular MJE340 and MJE350

•300 V (Min) — VCEO(sus)

•0.5 A Rated Collector Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

300

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

300

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.5

0.75

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.12

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation* @ TA = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.56

0.012

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

8.33

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient*

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purpose

ÎÎÎÎÎ

ÎÎÎÎÎÎ

260

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 1 mAdc, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

300

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCB = 300 Vdc, IE = 0)

ÎÎÎÎÎ

ICBO

ÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 3 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎ

ÎÎÎÎ

240

ÎÎÎ

—

*When surface mounted on minimum pad sizes recommended.

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD340/D

 Motorola, Inc. 1995

SILICON

POWER TRANSISTORS

0.5 AMPERE

300 VOLTS

15 WATTS

*Motorola Preferred Device





MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





 

CASE 369A–13

CASE 369–07

 

2 Motorola Bipolar Power Transistor Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

300

10 1

100

3 20 30 50 70 100 200 300 500

200

2 5 107

hFE, DC CURRENT GAIN

TJ = 150

+25

VCE = 2 V

VCE = 10 V

–55

+100

TYPICAL CHARACTERISTICS

MJD340

V, VOLTAGE (VOLTS)

Figure 2. “On” Voltages

IC, COLLECTOR CURRENT (mA)

020 30 50 100 200 500

0.4

0.8

0.6

0.2

300

TJ = 25

CVBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

IC/IB = 5

MJD340

07 10 20 30 100 200

0.8

0.6

50 70 300 500

0.4

0.2

200

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

10 7 10 20 30 100 200

Figure 4. “On” Voltages

IC, COLLECTOR CURRENT (mA)

100

V, VOLTAGE (VOLTS)

50 70

TJ = 25

VBE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

TJ = 150

VCE = 2 V

VCC = 10 V

–55

300 500

hFE, DC CURRENT GAIN

30 IC/IB = 10

IC/IB = 5

VCE(sat)

MJD350 MJD350

 

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 1 k500

JC(t) = r(t) R

JC = 8.33

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

Figure 5. Thermal Response

RESISTANCE (NORMALIZED)

0.03 0.3 3 30 300

0.01

IC, COLLECTOR CURRENT (mA)

1000

10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

120 30 50 70 100

200

500

300 500

Figure 6. Active Region Safe Operating Area

200 300 500 700 1000

100

1 ms

100

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 5. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

Figure 7. Power Derating

T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

TA (SURFACE MOUNT)

 

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

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MJD340/D

*MJD340/D*

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