SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME : 25K2849-O01L. Ss SPEC. No. Fuy i Electric (Co.,Ltd This Specification is subject to change without notice. DATE NAME PPROVED a . , A Fuji Electric Co,Lid. CHECKED |_ g ; o g A0 Y 0257-R-004a1. Scope This specifies Fuji power MOSFET 2SK2849-O01L, S N-channe! enhancement mode power MOSFET 2. Construction . Application for switching . Outview T-Pack L-TYPE Qutview See to 5/!2 page S-TYPE Outview See to 6/2 page . Absolute maximum ratings at Tc=25C (unless otherwise specified) Description Symbol | Characteristics | Unit Drain-source voltage Vos 200 V Drain-gate voltage V par 200 Vv Res=20KQ | Continuous Drain current [p + 18 A Pulsed drain current | peutes + 72 A Gate-source voltage Ves + 30 Vv ! Maximum power dissipation Po 50 W | Operating and storage Ten 150 c ) temperature range Tots -5 ~ +150 C | 6. Electrical characteristics at Tc=25C (unless otherwise specified) Static ratings Characteristics Description Symbo | Conditions Unit Min, Typ. Max. Drain-source lo =I1mA breakdown voltage | BVoss | Vcos=OV 200 V Gate threshold lo =1mA voltage Ves(th) | Vos=Ves 2.5 3.0 3.5 V i zero gate voltage loss Vos=200V | Ten= 25C 10 500 aA drain current Ves= OV loss T n= 125C 0.2 1.0 mA Gate-source Vos=230V leakage current less Vos= OV 10 100 nA Drain-source on- lo = QA state resistance Ros(on) | Vos= 10V 0.15 0.18 Q 2 2 Fuji Electric Co.Lid. g y% i Y 0257-R-003aDynamic ratings . Characteristics Description Symbo | Conditions Unit Min. Typ. Max. Forward lo = 9A transconductance gfs Vos= 25V 4.0 9.0 S Input capacitance | Ciss 1100 1650 pF Vos=25V Output capacitance | Coss Vos= OV 220 330 pF f =1MHz Reverse transfer capacitance Crss 100 150 pF t d{on) 15 30 ns Turn-on time Vec=150V tr Ves= 10V 80 120 ns fo = 18A td(off) } Res= 100 60 - 90 ns Turn-off time tf 40 60 ns: Reverse diode - Characteristics Description Symbo | Conditions Unit Min, Typ. Max. Avalanche L=1004H , Ten=25 C capability lav * see Figl and Fig? 18.0 V Diode forward te =2%X lor on-vol tage Vso Ves=OV, Ten=25C 1.5 2,25 V Reverse recovery le =I or time ter Voes=0V 165 ns -de/dt =100A/us Reverse recovery Ten = 25C charge Q., 1300 nc . Thermal resistance Characteristics Description Symbo | Condit ions Unit i Min. Typ. Max. Rthes-c | 2.5 | C/W Thermal resistance Rthen-a 75.0 | C/W : g 3 Fuji Electric Co.Ltd. g VN ! Y 0257-R-003aFig. ] Test circuit TITY L rs | DUT }- = a Vc 50Q Vec=1/10 * Vos L= 100uH 1 pulse | aw LAL LfLS SAS Fig.2 Operating waveforms 0 Vas lav 7 Vos 0 lp Fuji Electric Co,Ltd. 2 Yo Y 0257-R-003aFUJT POWER MOS FET TYPE +: 25K2849-0i1L +05 108 a 4.5202 Lot No. x 1 4320.2 \ Oo Trademark IN 1 NY a f 9.310.5 0.420.2 2.720.2 _ \ >< CONNECTION @ GATE 006 @ DRAIN () SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. PRE-SOLDER | Fuji Electric Co_Lid. OWG.HO He Y 0257-R-003aFUJI] POWER MOS FET TYPE : 25K2849-01S 106" S | , 4.520.2* Note : | on 132% Trade Yo | || mark > TT W) TEs.) 3 Lot No. | S=3e--01 <1 5 27 Type peas E | S| name _J ry | o| | | =; 4 ge Sj Se | @ | | TT 1240.2 | H 0.820.2 JL O.F 3s T) 5.08 | Ty ow? | alow BOTTOM VIEW os CONNECTION 10 = (7.5) @ GATE et | ~ @ DRAIN Tee 77) a Ui @ SOURCE oO} Hy in mj 2 3|" Wp a, | i | \ PRE SOLDER a | Notes . | | |. { ) + REFERENCE DIMENSIONS. Note |. Guaranteed mark of 2 *:DO NOT INCLUDE SOLDER. avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. o ) Fuji Electric Co,Lid. g y 1 Y 0257-R-003aPower Dissipation 75 PD=f (To) | - | 5D | : = 25 ! | 0! | 0 50 Te [C] Safe operating area ID=f (VDS) :D=0. 01, Tc=25C 10? : 10" 10 1 ee _ oe 40" 10 10 VOS [V] . S 7 Fuji Electric Co.,Ltd. 2 Vy | | Y 0757-R-003aTypical output characteristics 40 ID [A] 10 VBS [V] Typical transfer characteristic |D=f (VGS) :80 us pulse test, VDS=25V, Tch=25C 100 10 ID [A] 0.1 0.01 ID=f (VDS) :80 us pulse test, Tch=25C }yas=20 7 Fuji Electric Co.,Ltd. DWG. NO. & | (2 | Y 0257-R-O03aTypical transconductance gfs=f (ID) :80us pulse test, VDS=25V, Tch=25C 100 a = { 0.1 0.1 | 10 400 ID [A]: Typical drain-source on-state resistance RDS (on)=f (1D) :80us pulse test, Tch=25C 1.5 | | VGS= _ | r4, 5VV5. OV;5. 5Y 6. OV 6. 5V 1.0 ci 5 2 3 = 05 , 0.0 0 10 20 30 40 1D [A] Ht DWG. NO. Fuji Electric Co.,Ltd. { Y NDST-R-ANAA| Drain-source on-state resistance RDS (on) =f (Tch) : [D=9A, VGS=10V | poi E, oer . 05 1 Poa bee me a) win wee ee eee wea dee -- Lei a ~- ==. pommeee |e ee ee eee od , 04 ! 03 Ct eee el ee RDS (on) 0,0 50 100 150 Tch [C] Gate threshold voltage VGS (th) =f (Tch) : 1D=1mA, VDS=VGS i ee a er _ i oe ee, ss 7 i : i | | : : a : i max. typ. VGS (th) [VJ] min. 750 10 Fuji Electric Co.,Ltd. 12 DWG. NO. | Y 0257-R-003aJ Typical Capacitances ~ C=f (VDS) : VGS=0V, f=1MHz 10 > 0.1 ' 0.01 | ! 0.01 0.1 1 40 400 VDS [V] Typical gate charge characteristics VGS=f (Qz) : |D=18A 8 ; _ & Vec= 8 g <= = B Zz x = 8 bX & 35 Qo oO 0 20 40 60 80 400 Qg [nc] - . S Ww) bt Fuji Electric Co.,Ltd. g 111 | i Y NIS7-RNNRa} Forward characteristic of reverse diode iF=f (VSD) :80 us pulse test Tch=25C VGS=0V 100 _ | : | . - | - oe = 0.01 | 0.0 0.5 1.0 1.5 20 VSD [V} Transient thermal impedance 40" Z2th(ch~c) =f (t) parameter :D=t/T 10 = nu, , 5 yg 10. 02_ = a 107 105 404 10 407 10" 10 104 t [s] .: . 2 12 Fuji Electric Co.,Ltd. g in | Y 0257-R-003a