All Purpose InGaAs p-i-n Photodiode Sheet 1 of 1 35PD300LDC-ST, -SMA, -FC, -SC The 35PD300LDC-ST, an InGaAs photodiode with a 300m-diameter photosensitive region packaged in a TO-46 header and actively aligned in a AT&T ST active device mount, is a low-dark-current version of the 35PD300. This device is one of Telcom Devices' most versatile optoelectronic components designed for applications in high sensitivity instrumentation, and moderate-bit-rate fiberoptic communications. Planar semiconductor design and dielectric passivation provide superior performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200C, 15 hours, Vr = 20V). Devices with enhanced responsivity at 850 nm are available. Features: * Planar Structure * Dielectric Passivation * 100% Purge Burn-in * High Responsivity DEVICE CHARACTERISTICS Parameters Test Conditions Operating Voltage Dark Current Capacitance Responsivity Responsivity Rise/Fall -5V -5V 1300nm Minimum 0.7 Typical 4 0.9 Maximum Units -15 0.51 12 Volts nA pF A/W ns GHz 3 (-3dB) 300 ABSOLUTE MAXIMUM RATINGS Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature 20 Volts 25mA 5mA -40C to +85C -40C to +85C 250C Sheet 1 of 1 829 Flynn Road, Camarillo, CA 93012 * Phone: (805) 445-4500 * Fax: (805) 445-4502 Email: customerservice@telcomdevices.com * Website: www.telcomdevices.com