35PD300LDC-ST, -SMA, -FC, -SC
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 35PD300LDC-ST, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a
TO-46 header and actively aligned in a AT&T ST active device mount, is a low-dark-current version of the
35PD300. This device is one of Telcom Devices' most versatile optoelectronic components designed for
applications in high sensitivity instrumentation, and moderate-bit-rate fiberoptic communications. Planar
semiconductor design and dielectric passivation provide superior performance. Reliability is assured by
hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V). Devices with enhanced responsivity
at 850 nm are available.
All Purpose InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Responsivity
Rise/Fall
Volts
nA
pF
A/W
ns
GHz
–15
0.51
12
3
4
0.9
300
0.7
–5V
–5V
1300nm
(–3dB)
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
20 Volts
25mA
5mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS
