ky SGS-THOMSON FEATURES a LOW let < 200 pA a LOW Ilys 6mA s Se a IT(RMS) =6A G DESCRIPTION y The TYS 606 Silicon Controlled Rectifiers are high performance MESA diffused PNPN devices glass K passivated sensitive gate technology. G These parts are intended to general purpose TO 220 AB switching and phase control application. (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Te= 75C 6 A (180 conduction angle) IT(AV) Average on-state current Te = 75C 3.8 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 52 A ( Tj initial = 25C ) tp = 10 ms 50 it I2t value tp = 10 ms 12.5 A2s di/dt Critical rate of rise of on-state current 100 A/us Gate supply :IG=5 mA dig/dt=1 A/us Tstg Storage and operating junction temperature range - 40 to + 150 c Tj - 40 to+ 110 c Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter TYS 606- Unit 05 1 2 4 6 8 VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 Vv VRRM Tj= 110C Re@K =1 KQ 1/4 July 1991 Me 7929237 OO59420 7TS 89 TYS 606 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) |Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC 5.5 C/W GATE CHARACTERISTICS (maximum values) PG (AV) =0.5W PaGM= 20W (tp = 20us) IFGM = 1A (tp=20us) VFGM=16V(tp=20us) VRGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V) (DC) RL=1402 Tj-25C | MAX 0.2 mA VGT Vp=12V (DC) RL=140Q Tj=25C | MAX 1 VaD Vp=VDRM ALa3.3kQ = RGEK =1kQ Tj= 110C | MIN 0.1 Vv tot Vp=VorRmM Iq =12.5mA Tj=25C TYP 15 ps dig/dt = 0.12A/us IL Iq@=1.21eT Re@K =1kQ Tj=25C | MAX 10 mA IHW IT=50mA RGK =1kQ Tj=25C MAX 6 mA VIM ITM= 12A tp= 380us Tj=25C | MAX 1.85 V IDRM VpoRM Rated RGK =1kQ Tj=25C MAX 0.01 mA IRRM VARM Rated Rak =1kQ Te 110C 05 dV/dt Linear slope up to Vp=67%VDRM Tj= 110C } MIN 10 Vius Rak =1kQ CqK =0.1nF Tq Vp=67%VpRM ITM=12A VpR= 24V Tj= 110C | TYP 100 ps ditm/dt=10 A/ps dVp/dt= 2V/us RGK =1kQ : 2/4 90 me 7929237 0059421 631 Fig.1 : Maximum average power dissipation versus average on-state current. P (W) 7 + 360 i aya Ql= 180 | 4 3 / A QY+ 120 ip OQ: 90 i = 60 o Itay) (A) 0 1 2 3 4 5 6 Fig.3 Average temperature. on-state current versus case ' ray) fA) 7 6 Tcase("C) 0 25 50 75 100 125 Fig.5 : Relative variation of gate trigger current versus junction temperature. IgtiTy] (HiT) IgtlTj=25C] = In Tj=25C] 5 4.6 4 3.5 3 2.6 2 1S 1 0.5 T (oC) 40-30-20. 10 0 10 20 30 40 50 60 70 80 90 100110 TYS 606 Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact. P (W) Tease ("C) 0 C/W 5 C/W 10 C/W itao 15 C/W 90 Ql -180 100 | | Tamb (C) 110 0 20 40 60 80 100 120 140 Fig.4 Thermal transient impedance junction ta ambient versus pulse duration. Zth ( C/W) MCI CII la soe-o1 LAL LIVI TIME TT TIMI = 10E-03 10E-02 10E-01 10+00 10E*01 1002 10E+03 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. Ts (A) 60 T) initial = 25C 50 40 30 20 Number of cycles 1 10 100 1000 3/4 Me 79292397 OOS594ee S76 91 TYS 606 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10 ms, and corresponding value of It. Fig.8 : On-state characteristics (maximum values). Itsm (A). t (As) ty (A) 100 T) initial = 25C Ty mitral 25C I TSM Ty max 100 Tj max Vto = 0.9V Rt 0.0800 VTM(v) 0 1 2 3 4 5 PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic as [88 to.ato1 Seles tr led 12528 +0 40 al nm > 3.6 - 0 05 | a _ POF | ss mo oo +t CO wo 175 Si x a ee n[n \Q als SVS + 0.3 04-0 16 14 4 2.54 + 0.25 2 54+0 28 2,440.3 kK A G Cooling method : by conduction (method C) Marking : type number Weight : 2 g Polarity :NA Stud torque: NA 4/4 me 7929237 0059423 404 92